EPC Transistor - FET, MOSFET - Array
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Array
ProduttoreEPC
Record 27
Pagina 1/1
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Funzione FET | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Capacità di ingresso (Ciss) (Max) @ Vds | Potenza - Max | Temperatura di esercizio | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
EPC |
GANFET TRANS SYM 100V BUMPED DIE |
78.744 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 1.7A | 70mOhm @ 2A, 5V | 2.5V @ 600µA | 0.73nC @ 5V | 75pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS SYMMETRICAL HALF BRIDG |
78.798 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS ASYMMETRICAL HALF BRID |
3.137 |
|
- | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 16A (Ta) | 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V | 2.5V @ 5mA | 2.2nC @ 5V, 5.7nC @ 5V | 230pF @ 15V, 590pF @ 15V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS SYMMETRICAL HALF BRIDG |
87.732 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A | 4.4mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS SYMMETRICAL HALF BRIDG |
78.552 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 28A | 5.5mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 760pF @ 40V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS SYM HALF BRDG 80V |
45.828 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 23A | 5.5mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 7600pF @ 40V | - | - | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 2N-CH 100V BUMPED DIE |
62.904 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 1.7A | 70mOhm @ 2A, 5V | 2.5V @ 600µA | 0.73nC @ 5V | 75pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 2N-CH 120V BUMPED DIE |
92.868 |
|
eGaN® | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 120V | 3.4A | 60mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET 2 N-CH 30V 9.5A/38A DIE |
26.922 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 10A (Ta), 40A (Ta) | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET 2 N-CHANNEL 60V 23A DIE |
53.898 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A (Tj) | 4.4mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS ASYMMETRICAL HALF BRID |
35.766 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 9.5A, 38A | 11.5mOhm @ 20A, 5V | 2.5V @ 2mA | 2.7nC @ 5V | 300pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS ASYMMETRICAL HALF BRID |
59.664 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 10A (Ta), 40A (Ta) | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS ASYMMETRICAL HALF BRID |
98.832 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 9.5A, 38A | 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V | 2.5V @ 3mA, 2.5V @ 12mA | 2.7nC @ 5V, 12nC @ 5V | 300pF @ 30V, 1200pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS ASYMMETRICAL HALF BRID |
100.422 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 9.5A, 38A | 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V | 2.5V @ 2.5mA, 2.5V @ 10mA | 2.5nC @ 5V, 10nC @ 5V | 300pF @ 40V, 1100pF @ 40V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET 3 N-CH 60V/100V 9BGA |
23.286 |
|
eGaN® | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 60V, 100V | 1.7A, 500mA | 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.22nC @ 5V, 0.044nC @ 5V | 22pF @ 30V, 7pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | 9-BGA (1.35x1.35) |
|
|
|
EPC |
GANFET 3 N-CH 100V 9BGA |
36.030 |
|
eGaN® | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 100V | 1.7A, 500mA | 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.16nC @ 5V, 0.044nC @ 5V | 16pF @ 50V, 7pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | 9-BGA (1.35x1.35) |
|
|
|
EPC |
GANFET 2NCH 120V 3.4A DIE |
4.680 |
|
eGaN® | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 120V | 3.4A | 60mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | - | -40°C ~ 150°C (TJ) | - | Die | Die |
|
|
|
EPC |
GANFET 2NCH 100V 23A DIE |
16.584 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET 2NCH 80V 9.5A DIE |
5.076 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 9.5A | 14.5mOhm @ 20A, 5V | 2.5V @ 2.5mA | 2.5nC @ 5V | 300pF @ 40V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS ASYMMETRICAL HALF BRID |
2.430 |
|
- | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 16A (Ta) | 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V | 2.5V @ 5mA | 2.2nC @ 5V, 5.7nC @ 5V | 230pF @ 15V, 590pF @ 15V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 3N-CH 100V BUMPED DIE |
4.140 |
|
eGaN® | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 100V | 1.7A, 500mA | 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.16nC @ 5V, 0.044nC @ 5V | 16pF @ 50V, 7pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | 9-BGA (1.35x1.35) |
|
|
|
EPC |
GAN TRANS 2N-CH 30V BUMPED DIE |
2.502 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 10A (Ta), 40A (Ta) | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 2N-CH 60V BUMPED DIE |
3.384 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 9.5A, 38A | 11.5mOhm @ 20A, 5V | 2.5V @ 2mA | 2.7nC @ 5V | 300pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 2N-CH 60V BUMPED DIE |
6.804 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A | 4.4mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 2N-CH 80V BUMPED DIE |
5.076 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 23A | 5.5mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 760pF @ 40V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 2N-CH 100V BUMPED DIE |
3.744 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 2N-CH 80V BUMPED DIE |
5.796 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 9.5A, 38A | 14.5mOhm @ 20A, 5V | 2.5V @ 2.5mA | 2.5nC @ 5V | 300pF @ 40V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |