Transistor - FET, MOSFET - Singolo
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Mostra filtri
Ripristina filtri
Applica filtri
CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 99/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Siliconix |
MOSFET N-CH 250V 45A D2PAK |
188.160 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 45A (Tc) | 6V, 10V | 58mOhm @ 20A, 10V | 4V @ 250µA | 140nC @ 10V | ±30V | 5000pF @ 25V | - | 3.75W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET P-CH 55V 42A TO-262 |
21.486 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 20mOhm @ 42A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 3500pF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 195A D2PAK |
14.478 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 10V | 2.5mOhm @ 170A, 10V | 4V @ 250µA | 300nC @ 10V | ±20V | 8970pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
STMicroelectronics |
MOSFET N-CH 600V 6.5A TO-220 |
20.832 |
|
MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 6.5A (Tc) | 10V | 745mOhm @ 3.25A, 10V | 4V @ 250µA | 17.4nC @ 10V | ±25V | 452pF @ 50V | - | 70W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
STMicroelectronics |
MOSFET N-CH 650V POWERFLAT5X6 |
25.368 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 240mOhm @ 7.5A, 10V | 5V @ 250µA | 31nC @ 10V | ±25V | 1240pF @ 100V | - | 57W (Tc) | 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
|
|
|
STMicroelectronics |
MOSFET N-CH 800V 10.5A D2PAK |
12.672 |
|
SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 800V | 10.5A (Tc) | 10V | 750mOhm @ 5.25A, 10V | 4.5V @ 100µA | 87nC @ 10V | ±30V | 2620pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET P-CH 30V 80A TO220-3 |
12.072 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 4.4mOhm @ 80A, 10V | 2V @ 253µA | 160nC @ 10V | +5V, -16V | 11300pF @ 25V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
STMicroelectronics |
MOSFET N-CH 250V 17A TO-220FP |
21.936 |
|
STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 250V | 17A (Tc) | 10V | 165mOhm @ 8.5A, 10V | 4V @ 250µA | 29.5nC @ 10V | ±20V | 1000pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
|
|
|
ON Semiconductor |
MOSFET N-CH 150V 27.4A TO-220F |
16.182 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 27.4A (Tc) | 10V | 19mOhm @ 27.4A, 10V | 4V @ 250µA | 39nC @ 10V | ±20V | 2685pF @ 25V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
|
|
Vishay Siliconix |
MOSFET N-CH 200V 20A TO-247AC |
18.438 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 20A (Tc) | 10V | 180mOhm @ 12A, 10V | 4V @ 250µA | 70nC @ 10V | ±20V | 1300pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Alpha & Omega Semiconductor |
MOSFET N-CH 600V 15A TO220F |
20.064 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 290mOhm @ 7.5A, 10V | 3.8V @ 250µA | 15.6nC @ 10V | ±30V | 717pF @ 100V | - | 27.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
|
|
|
IXYS |
MOSFET N-CH 1000V 800MA DPAK |
22.500 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 800mA (Tc) | - | 21Ohm @ 400mA, 0V | - | 14.6nC @ 5V | ±20V | 325pF @ 25V | Depletion Mode | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET P-CH 150V 27A TO-220AB |
14.538 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 27A (Tc) | 10V | 150mOhm @ 16A, 10V | 5V @ 250µA | 110nC @ 10V | ±20V | 2210pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 130A D2PAK |
17.904 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 130A (Tc) | 10V | 7mOhm @ 75A, 10V | 4V @ 250µA | 250nC @ 10V | ±20V | 7670pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
ON Semiconductor |
MOSFET N-CH 200V 52A TO-220 |
14.790 |
|
UniFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 52A (Tc) | 10V | 49mOhm @ 26A, 10V | 5V @ 250µA | 63nC @ 10V | ±30V | 2900pF @ 25V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
|
ON Semiconductor |
MOSFET N-CH 250V 51A TO-220F |
36.354 |
|
UniFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 51A (Tc) | 10V | 60mOhm @ 25.5A, 10V | 5V @ 250µA | 70nC @ 10V | ±30V | 3410pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 557A D2PAK |
17.064 |
|
StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 557A (Tc) | 4.5V, 10V | 0.65mOhm @ 100A, 10V | 2.4V @ 250µA | 307nC @ 4.5V | ±20V | 19680pF @ 25V | - | 416W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
|
|
|
Texas Instruments |
MOSFET N-CH 100V TO-263-3 |
14.580 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 200A (Ta) | 6V, 10V | 5.6mOhm @ 90A, 10V | 3.2V @ 250µA | 57nC @ 10V | ±20V | 5060pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DDPAK/TO-263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 24V 195A TO220AB |
15.978 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 24V | 195A (Tc) | 10V | 1.5mOhm @ 195A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 7590pF @ 24V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 200V 65A D2PAK |
19.884 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 65A (Tc) | 10V | 30mOhm @ 30A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 5100pF @ 25V | - | 3.75W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 75V DIRECTFET L8 |
34.878 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 26A (Ta), 375A (Tc) | 10V | 2.3mOhm @ 96A, 10V | 4V @ 250µA | 300nC @ 10V | ±20V | 12222pF @ 25V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
|
|
|
ON Semiconductor |
MOSFET N-CH 200V 62A D2PAK |
16.920 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 200V | 62A (Tc) | 10V | 27mOhm @ 31A, 10V | 5V @ 250µA | 99nC @ 10V | ±30V | 7230pF @ 25V | - | 260W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
STMicroelectronics |
MOSFET N-CH 950V 8A D2PAK |
13.620 |
|
SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 950V | 8A (Tc) | 10V | 800mOhm @ 4A, 10V | 5V @ 100µA | 22nC @ 10V | ±30V | 630pF @ 100V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 250V 45A D2PAK |
17.688 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 45A (Tc) | 10V | 48mOhm @ 26A, 10V | 5V @ 250µA | 110nC @ 10V | ±30V | 4560pF @ 25V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 57A TO-247AC |
17.064 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 57A (Tc) | 10V | 25mOhm @ 28A, 10V | 4V @ 250µA | 190nC @ 10V | ±20V | 3000pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 200V 9A D2PAK |
63.240 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 9A (Tc) | 4V, 5V | 400mOhm @ 5.4A, 5V | 2V @ 250µA | 40nC @ 10V | ±10V | 1100pF @ 25V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Nexperia |
MOSFET N-CH 60V 120A TO220AB |
51.690 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.2mOhm @ 25A, 10V | 4V @ 1mA | 137nC @ 10V | ±20V | 9997pF @ 30V | - | 338W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
ON Semiconductor |
MOSFET P-CH 60V 30A TO-220F |
30.516 |
|
QFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 26mOhm @ 15A, 10V | 4V @ 250µA | 110nC @ 10V | ±25V | 3600pF @ 25V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
|
|
ON Semiconductor |
MOSFET N-CH 800V 8A TO-220 |
14.340 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 1.55Ohm @ 4A, 10V | 5V @ 250µA | 45nC @ 10V | ±30V | 2050pF @ 25V | - | 178W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
|
ON Semiconductor |
MOSFET N-CH 60V 48A TO-220AB |
12.162 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 48A (Tc) | 5V, 10V | 20mOhm @ 24A, 10V | 2V @ 250µA | 60nC @ 5V | ±16V | 2000pF @ 25V | - | 100W (Tc) | -65°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |