Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 97/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Nexperia |
MOSFET N-CH 60V 75A D2PAK |
33.984 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 75A (Tc) | 10V | 3.6mOhm @ 25A, 10V | 4V @ 1mA | 168nC @ 10V | ±20V | 8300pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 30V 120A D2PAK |
27.312 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 120A (Tc) | 4.5V, 10V | 1mOhm @ 25A, 10V | 2.2V @ 1mA | 243nC @ 10V | ±20V | 14850pF @ 15V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 43A TO-220AB |
21.366 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 43A (Tc) | 10V | 42mOhm @ 22A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 2400pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 650V 10A IPAK |
26.436 |
|
MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 10A (Tc) | 10V | 430mOhm @ 5A, 10V | 4V @ 250µA | 17nC @ 10V | ±25V | 590pF @ 100V | - | 110W (Tc) | 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 75V 120A D2PAK |
27.864 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 4.1mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | ±20V | 6920pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 500V 18.5A PG-TO-220 |
89.766 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 18.5A (Tc) | 13V | 190mOhm @ 6.2A, 13V | 3.5V @ 510µA | 47.2nC @ 10V | ±20V | 1137pF @ 100V | - | 127W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 500V 18.5A TO220FP |
20.148 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 18.5A (Tc) | 13V | 190mOhm @ 6.2A, 13V | 3.5V @ 510µA | 47.2nC @ 10V | ±20V | 1137pF @ 100V | - | 32W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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IXYS |
MOSFET P-CH 100V 18A TO-220 |
14.598 |
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TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 100V | 18A (Tc) | 10V | 120mOhm @ 9A, 10V | 4.5V @ 250µA | 39nC @ 10V | ±15V | 2100pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 60V 60A TO-220 |
18.318 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 60V | 60A (Tc) | 10V, 5V | 14mOhm @ 30A, 10V | 1V @ 250µA | 66nC @ 4.5V | ±15V | 2000pF @ 25V | - | 110W (Tc) | -65°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia |
MOSFET N-CH 100V 120A D2PAK |
15.630 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 3.9mOhm @ 25A, 10V | 4V @ 1mA | 170nC @ 10V | ±20V | 9900pF @ 50V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 40V 120A TO-263 |
15.732 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 4.5V, 10V | 4mOhm @ 30A, 10V | 2.5V @ 250µA | 330nC @ 10V | ±20V | 13980pF @ 20V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 11A DPAK |
24.810 |
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FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 5V @ 250µA | 24.5nC @ 10V | ±25V | 845pF @ 50V | - | 109W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 195A D2PAK |
19.920 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 4.5V, 10V | 1.7mOhm @ 195A, 10V | 2.5V @ 250µA | 162nC @ 4.5V | ±20V | 10315pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 620V 5.5A TO-220FP |
23.424 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 620V | 5.5A (Tc) | 10V | 1.28Ohm @ 2.8A, 10V | 4.5V @ 50µA | 34nC @ 10V | ±30V | 875pF @ 50V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
13.836 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 26A (Tc) | 10V | 120mOhm @ 8.2A, 10V | 4V @ 410µA | 36nC @ 10V | ±20V | 1544pF @ 400V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 8HSOF |
19.656 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 300A (Tc) | 10V | 1.15mOhm @ 100A, 10V | 4V @ 125µA | 151nC @ 10V | ±20V | 12090pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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STMicroelectronics |
MOSFET N-CH 100V 80A D2PAK |
19.740 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 10V | 15mOhm @ 40A, 10V | 4V @ 250µA | 182nC @ 10V | ±20V | 5500pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 60V 70A TO-220AB |
46.662 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 70A (Tc) | 10V | 14mOhm @ 70A, 10V | 4V @ 250µA | 156nC @ 20V | ±20V | 2250pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N CH 60V 195A D2PAK |
15.168 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.7V @ 250µA | 411nC @ 10V | ±20V | 13703pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 120A TO263 |
22.866 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 3.8mOhm @ 20A, 10V | 3.5V @ 250µA | 190nC @ 10V | ±20V | 7230pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 20A DIRECTFET |
78.498 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 20A (Ta), 124A (Tc) | 10V | 3.5mOhm @ 74A, 10V | 4V @ 250µA | 300nC @ 10V | ±20V | 11560pF @ 25V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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Infineon Technologies |
MOSFET N-CH 40V 46A DIRECTFETL8 |
3.224 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 46A (Ta), 270A (Tc) | 10V | 1mOhm @ 160A, 10V | 4V @ 250µA | 330nC @ 10V | ±20V | 11880pF @ 25V | - | 3.8W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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ON Semiconductor |
MOSFET N-CH 80V 80A POWER56 |
27.672 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 25A (Ta), 198A (Tc) | 8V, 10V | 2.4mOhm @ 25A, 10V | 4.5V @ 250µA | 155nC @ 10V | ±20V | 8030pF @ 40V | - | 3.3W (Ta), 187W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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STMicroelectronics |
N-CHANNEL 60 V, 0.0031 OHM TYP., |
16.260 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 70A (Tc) | 10V | 3.5mOhm @ 35A, 10V | 4V @ 250µA | 55nC @ 10V | ±20V | 3100pF @ 25V | - | 33W (Tc) | 175°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 100V 33A TO-247AC |
14.916 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 33A (Tc) | 10V | 52mOhm @ 16A, 10V | 4V @ 250µA | 94nC @ 10V | ±20V | 1400pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 800V 11A TO220 |
12.882 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 450mOhm @ 4.5A, 10V | 3.5V @ 220µA | 24nC @ 10V | ±20V | 770pF @ 500V | Super Junction | 73W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 80V 90A H2PAK-2 |
22.620 |
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DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 80V | 90A (Tc) | 10V | 4mOhm @ 45A, 10V | 4.5V @ 250µA | 96nC @ 10V | ±20V | 6340pF @ 40V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 50V 18A TO-220AB |
15.132 |
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- | P-Channel | MOSFET (Metal Oxide) | 50V | 18A (Tc) | 10V | 140mOhm @ 9.3A, 10V | 4V @ 250µA | 39nC @ 10V | ±20V | 900pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 80V 75A D2PAK |
23.004 |
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UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 80V | 75A (Tc) | 10V | 10mOhm @ 75A, 10V | 4V @ 250µA | 235nC @ 20V | ±20V | 3750pF @ 25V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 30V 80A D2PAK |
31.386 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 34A (Ta), 80A (Tc) | 4.5V, 10V | 1.9mOhm @ 80A, 10V | 3V @ 250µA | 265nC @ 10V | ±20V | 11400pF @ 15V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |