Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 98/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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ON Semiconductor |
MOSFET N-CH 250V 33A TO-220F |
23.172 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 33A (Tc) | 10V | 94mOhm @ 16.5A, 10V | 5V @ 250µA | 48nC @ 10V | ±30V | 2135pF @ 25V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 60V 80A TO-220 |
15.150 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 10mOhm @ 40A, 10V | 4V @ 250µA | 74nC @ 10V | ±20V | 3190pF @ 25V | - | 176W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 60V 200A |
17.280 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 200A (Ta) | 4.5V, 10V | 2mOhm @ 100A, 10V | 2.4V @ 250µA | 81nC @ 10V | ±20V | 6620pF @ 30V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DDPAK/TO-263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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Infineon Technologies |
MOSFET N-CH 560V 21A TO-263 |
13.062 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 560V | 21A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95nC @ 10V | ±20V | 2400pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 150V 79A D2PAK |
18.582 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 8A (Ta), 79A (Tc) | 6V, 10V | 16mOhm @ 33A, 10V | 4V @ 250µA | 107nC @ 10V | ±20V | 5870pF @ 25V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 5A IPAK |
45.918 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 5A (Tc) | 10V | 900mOhm @ 2.5A, 10V | 4V @ 250µA | 14nC @ 10V | ±25V | 363pF @ 50V | - | 45W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 100V 75A D2PAK |
16.200 |
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UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 14mOhm @ 75A, 10V | 4V @ 250µA | 238nC @ 20V | ±20V | 3790pF @ 25V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO-220AB |
38.316 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 3mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | ±20V | 6540pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 100V 100A TO220-3 |
16.656 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Ta) | 6V, 10V | 7.7mOhm @ 60A, 10V | 3.3V @ 250µA | 38nC @ 10V | ±20V | 3870pF @ 50V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 43A TO-220AB |
12.108 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 43A (Tc) | 10V | 54mOhm @ 26A, 10V | 5V @ 250µA | 91nC @ 10V | ±20V | 2900pF @ 25V | - | 3.8W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia |
MOSFET N-CH 100V 100A TO220AB |
282.636 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 5.6mOhm @ 25A, 10V | 4V @ 1mA | 141nC @ 10V | ±20V | 8061pF @ 50V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 195A D2PAK |
21.552 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Ta) | 10V | 1.75mOhm @ 195A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 9200pF @ 25V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 478A D2PAK |
16.902 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 478A (Tc) | 4.5V, 10V | 0.8mOhm @ 100A, 10V | 2.4V @ 250µA | 267nC @ 4.5V | ±20V | 15270pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 100V 190A D2PAK-7 |
19.956 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 190A (Tc) | 10V | 4mOhm @ 110A, 10V | 4V @ 250µA | 230nC @ 10V | ±20V | 9830pF @ 50V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 25A TO263 |
16.986 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 25A (Tc) | 10V | 190mOhm @ 12.5A, 10V | 4V @ 250µA | 26.4nC @ 10V | ±30V | 1278pF @ 100V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 57A D2PAK |
35.682 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 57A (Tc) | 10V | 12mOhm @ 34A, 10V | 4V @ 250µA | 65nC @ 10V | ±20V | 1690pF @ 25V | - | 92W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 31A TO-220AB |
18.408 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 31A (Tc) | 10V | 82mOhm @ 18A, 10V | 5.5V @ 250µA | 107nC @ 10V | ±30V | 2370pF @ 25V | - | 3.1W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 40V 20A TO220F |
27.462 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 20A (Ta), 85A (Tc) | 4.5V, 10V | 2.9mOhm @ 20A, 10V | 2.2V @ 250µA | 72nC @ 10V | ±20V | 3510pF @ 20V | - | 1.9W (Ta), 41W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 75V 130A TO-220AB |
16.008 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 130A (Tc) | 10V | 7.8mOhm @ 78A, 10V | 4V @ 250µA | 250nC @ 10V | ±20V | 5600pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 650V 12A TO220 |
12.918 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 330mOhm @ 6A, 10V | 4V @ 250µA | 20nC @ 10V | ±25V | 770pF @ 100V | - | 110W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 200V 18A TO-220 |
22.440 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 125mOhm @ 10A, 10V | 4V @ 250µA | 39nC @ 10V | ±20V | 940pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 160A D2PAK-7 |
16.608 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 160A (Tc) | 10V | 2.6mOhm @ 140A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 7820pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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ON Semiconductor |
MOSFET N-CH 100V 96A TO-220-3 |
40.152 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 96A (Tc) | 10V | 8.5mOhm @ 96A, 10V | 4V @ 250µA | 40nC @ 10V | ±20V | 2695pF @ 50V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 950V 3.5A TO220FP |
19.056 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 950V | 3.5A (Tc) | 10V | 2.5Ohm @ 1.5A, 10V | 5V @ 100µA | 12.5nC @ 10V | 30V | 220pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 150V 83A TO263-3 |
64.404 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 83A (Tc) | 8V, 10V | 10.8mOhm @ 83A, 10V | 4V @ 160µA | 55nC @ 10V | ±20V | 3230pF @ 75V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 55V 75A D2PAK |
21.132 |
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UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 7mOhm @ 75A, 10V | 4V @ 250µA | 275nC @ 20V | ±20V | 4000pF @ 25V | - | 325W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 50A TO-220AB |
20.172 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4V, 5V | 28mOhm @ 31A, 5V | 2V @ 250µA | 66nC @ 5V | ±10V | 3300pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 180A TO263-7-3 |
123.588 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 180A (Tc) | 10V | 0.98mOhm @ 100A, 10V | 4V @ 230µA | 286nC @ 10V | ±20V | 22880pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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STMicroelectronics |
MOSFET N-CH 800V 16A |
14.958 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 800V | 16A (Tc) | 10V | 280mOhm @ 8A, 10V | 5V @ 100µA | 33nC @ 10V | ±30V | 1000pF @ 100V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 75V 75A TO-220 |
14.286 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 11mOhm @ 37.5A, 10V | 4V @ 250µA | 104nC @ 10V | ±20V | 4468pF @ 25V | - | 137W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |