Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 101/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 650V 12A D2PAK |
22.950 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 70nC @ 10V | ±30V | 1224pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 200V 75A D2PAK |
21.864 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 75A (Tc) | 10V | 34mOhm @ 37A, 10V | 4V @ 250µA | 84nC @ 10V | ±20V | 3260pF @ 25V | - | 190W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 195A TO220AB |
31.038 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 4.5V, 10V | 1.7mOhm @ 195A, 10V | 2.5V @ 250µA | 162nC @ 4.5V | ±20V | 10315pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 13A TO220SIS |
22.770 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Ta) | 10V | 430mOhm @ 6.5A, 10V | 4V @ 1mA | 40nC @ 10V | ±30V | 2300pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Nexperia |
MOSFET N-CH 30V 120A TO220AB |
14.826 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 120A (Tc) | 4.5V, 10V | 1.3mOhm @ 25A, 10V | 2.2V @ 1mA | 243nC @ 10V | ±20V | 14850pF @ 15V | - | 338W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 55V 80A TO-220 |
15.096 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 6.5mOhm @ 40A, 10V | 4V @ 250µA | 189nC @ 10V | ±20V | 4400pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 95A TO-247AC |
13.944 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 95A (Tc) | 10V | 5.3mOhm @ 95A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 5600pF @ 25V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 40V 75A TO-220AB |
15.888 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 2.3mOhm @ 75A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 6450pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 14A D2PAK |
18.576 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 280mOhm @ 8.4A, 10V | 4V @ 250µA | 68nC @ 10V | ±20V | 1300pF @ 25V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 200V 12A TO-247AC |
16.914 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 12A (Tc) | 10V | 500mOhm @ 7.2A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 1200pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 200V 56A TO-220AB |
15.258 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 56A (Tc) | 10V | 40mOhm @ 34A, 10V | 4V @ 250µA | 220nC @ 10V | ±20V | 4220pF @ 25V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 800V 6A TO220 |
18.816 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 1.2Ohm @ 3A, 10V | 5V @ 100µA | 13.4nC @ 10V | ±30V | 360pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
20.184 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 95mOhm @ 11.8A, 10V | 4V @ 590µA | 45nC @ 10V | ±20V | 2140pF @ 400V | - | 128W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 59A D2PAK |
31.608 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 59A (Tc) | 10V | 18mOhm @ 35A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 2900pF @ 25V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 195A |
18.834 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 4.5V, 10V | 1.25mOhm @ 100A, 10V | 2.4V @ 250µA | 270nC @ 4.5V | ±20V | 15140pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 80V 120A D2PAK |
23.478 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 6V, 10V | 1.7mOhm @ 100A, 10V | 3.8V @ 280µA | 223nC @ 10V | ±20V | 16900pF @ 40V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 55V 42A D2PAK |
16.020 |
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Automotive, AEC-Q101, HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 20mOhm @ 42A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 3500pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 60V 120A TO220AB |
6.426 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 4.5V, 10V | 6.7mOhm @ 30A, 10V | 2.5V @ 250µA | 270nC @ 10V | ±20V | 14280pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 650V 20A TO220 |
118.086 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 20A (Tc) | 10V | 180mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | ±25V | 1440pF @ 100V | - | 170W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 650V 20A TO220FP |
23.712 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 20A (Tc) | 10V | 180mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | ±25V | 1440pF @ 100V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH TO220-3 |
14.394 |
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CoolMOS™ CFD7 | N-Channel | MOSFET (Metal Oxide) | 650V | 14A (Tc) | 10V | 170mOhm @ 6A, 10V | 4.5V @ 300µA | 28nC @ 10V | ±20V | 1199pF @ 400V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 10A TO-220 |
27.048 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 4.5A, 10V | 4.5V @ 250µA | 70nC @ 10V | ±30V | 1370pF @ 25V | - | 115W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 950V 9A TO-220FP |
28.482 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 950V | 9A (Tc) | 10V | 1.25Ohm @ 3A, 10V | 5V @ 100µA | 13nC @ 10V | ±30V | 450pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 800V 11A TO-247 |
12.354 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 450mOhm @ 7.1A, 10V | 3.9V @ 680µA | 85nC @ 10V | ±20V | 1600pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 120A TO220AB |
27.210 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 4.5V, 10V | 2.3mOhm @ 30A, 10V | 2.5V @ 250µA | 126nC @ 10V | ±20V | 11113pF @ 30V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N CH 60V 195A TO-220AB |
22.992 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.7V @ 250µA | 411nC @ 10V | ±20V | 13703pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 17.5A TO220 |
23.244 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 4.5V @ 730µA | 68nC @ 10V | ±20V | 1850pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 600V 17A TO220 |
14.838 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 17A (Tc) | 10V | 190mOhm @ 8A, 10V | 4V @ 250µA | 46nC @ 10V | ±30V | 1400pF @ 50V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 500V 18A TO-220F |
63.948 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 18A (Tc) | 10V | 265mOhm @ 9A, 10V | 5V @ 250µA | 60nC @ 10V | ±30V | 2860pF @ 25V | - | 38.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 100V 180A TO-262 |
27.048 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 4.7mOhm @ 106A, 10V | 4V @ 250µA | 215nC @ 10V | ±20V | 9575pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |