Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 96/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET P-CH 55V 14A TO220FP |
19.740 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 14A (Tc) | 4.5V, 10V | 105mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | ±20V | 660pF @ 50V | - | 33W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 500V 8A TO-220AB |
101.004 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 38nC @ 10V | ±30V | 1018pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 30A TO-220AB |
24.054 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4V, 5V | 50mOhm @ 18A, 5V | 2V @ 250µA | 35nC @ 5V | ±10V | 1600pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 56A I-PAK |
26.154 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 56A (Tc) | 10V | 9mOhm @ 46A, 10V | 4V @ 100µA | 84nC @ 10V | ±20V | 3070pF @ 50V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 100V 32A TO-220AB |
17.838 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 6A (Ta), 32A (Tc) | 6V, 10V | 36mOhm @ 32A, 10V | 4V @ 250µA | 28nC @ 10V | ±20V | 1250pF @ 25V | - | 95W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 100V 35A TO-220 |
22.884 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | 45mOhm @ 15A, 10V | 4V @ 250µA | 55nC @ 10V | ±20V | 1180pF @ 25V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 60V 1.6A 4-DIP |
18.552 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 1.6A (Ta) | 10V | 280mOhm @ 960mA, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 570pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Infineon Technologies |
MOSFET N-CH 200V 18A TO-220AB |
88.530 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 100mOhm @ 11A, 10V | 4.9V @ 100µA | 29nC @ 10V | ±20V | 1200pF @ 50V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 260A TO-220AB |
27.492 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 260A (Tc) | 4.5V, 10V | 1.95mOhm @ 60A, 10V | 2.35V @ 150µA | 86nC @ 4.5V | ±20V | 8420pF @ 15V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 500V 4.4A TO-220FP |
18.390 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 500V | 4.4A (Tc) | 10V | 1.5Ohm @ 2.2A, 10V | 4.5V @ 50µA | 28nC @ 10V | ±30V | 535pF @ 25V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 620V 5.5A IPAK |
117.036 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 620V | 5.5A (Tc) | 10V | 1.2Ohm @ 2.8A, 10V | 4.5V @ 50µA | 30nC @ 10V | ±30V | 875pF @ 50V | - | 90W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Nexperia |
MOSFET N-CH 40V TO220AB |
87.636 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 2.8mOhm @ 10A, 10V | 4V @ 1mA | 71nC @ 10V | ±20V | 4491pF @ 20V | - | 211W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
N-CHANNEL 600 V, 0.26 OHM TYP., |
18.006 |
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MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 420mOhm @ 5A, 10V | 5V @ 250µA | 16.5nC @ 10V | ±25V | 614pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
N-CHANNEL 600 V, 0.26 OHM TYP., |
12.894 |
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MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 420mOhm @ 5A, 10V | 5V @ 250µA | 16.5nC @ 10V | ±25V | 614pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Nexperia |
MOSFET N-CH 80V 100A TO220AB |
54.318 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 10V | 4.7mOhm @ 15A, 10V | 4V @ 1mA | 101nC @ 10V | ±20V | 6793pF @ 12V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 50V 15A TO-220AB |
15.492 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 15A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 17nC @ 10V | ±20V | 850pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 2.5A TO-220AB |
23.688 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4.5V @ 250µA | 17nC @ 10V | ±30V | 340pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
N-CHANNEL 600 V, 0.26 OHM TYP., |
15.576 |
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MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 8A (Tc) | 10V | 530mOhm @ 4A, 10V | 5V @ 250µA | 15nC @ 10V | ±25V | 529pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 100V 42A TO-247AC |
20.922 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 42A (Tc) | 10V | 36mOhm @ 23A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 1900pF @ 25V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 800V 4.1A TO-220AB |
29.220 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 4.1A (Tc) | 10V | 3Ohm @ 2.5A, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 1300pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 100V 33A TO-220 |
23.502 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 33A (Tc) | 10V | 52mOhm @ 16.5A, 10V | 4V @ 250µA | 51nC @ 10V | ±25V | 1500pF @ 25V | - | 127W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 60V 60A TO-220 |
19.074 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 60V | 60A (Tc) | 10V | 14mOhm @ 30A, 10V | 4V @ 250µA | 75nC @ 10V | ±20V | 1700pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 800V 3A IPAK |
36.804 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 3.5Ohm @ 1.5A, 10V | 4.5V @ 50µA | 22.5nC @ 10V | ±30V | 575pF @ 25V | - | 80W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CH 55V 80A D2PAK |
95.988 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 8mOhm @ 40A, 10V | 4V @ 250µA | 142nC @ 10V | ±20V | 5300pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 55V 80A D2PAK |
19.212 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 6.5mOhm @ 40A, 10V | 4V @ 250µA | 189nC @ 10V | ±20V | 4400pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 100V 18A TO-220F |
34.464 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 18A (Tc) | 5V, 10V | 52mOhm @ 9A, 10V | 2V @ 250µA | 40nC @ 5V | ±20V | 1630pF @ 25V | - | 41W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 200V 30A TO-247AC |
15.612 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 30A (Tc) | 10V | 75mOhm @ 18A, 10V | 4V @ 250µA | 123nC @ 10V | ±20V | 2159pF @ 25V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 500V 9A TO-220F |
14.808 |
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FRFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 9A (Tc) | 10V | 850mOhm @ 4.5A, 10V | 4V @ 250µA | 35nC @ 10V | ±30V | 1030pF @ 25V | - | 44W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 60V 57A TO-220AB |
22.272 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 57A (Tc) | 10V | 12mOhm @ 34A, 10V | 4V @ 250µA | 65nC @ 10V | ±20V | 1690pF @ 25V | - | 92W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 40V 105A TO220 |
24.504 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 20A (Ta), 105A (Tc) | 4.5V, 10V | 2.9mOhm @ 20A, 10V | 2.2V @ 250µA | 72nC @ 10V | ±20V | 4300pF @ 20V | - | 1.9W (Ta), 176W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |