Infineon Technologies Transistor - FET, MOSFET - Array
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Array
ProduttoreInfineon Technologies
Record 393
Pagina 12/14
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Funzione FET | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Capacità di ingresso (Ciss) (Max) @ Vds | Potenza - Max | Temperatura di esercizio | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore |
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Infineon Technologies |
MOSFET 2P-CH 30V 1.5A TSOP-6 |
6.678 |
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OptiMOS™ | 2 P-Channel (Dual) | Logic Level Gate | 30V | 1.5A | 150mOhm @ 1.5A, 10V | 2V @ 11µA | 2.3nC @ 5V | 282pF @ 15V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP-6-6 |
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Infineon Technologies |
MOSFET 2N-CH 20V 5.4A 8DSO |
7.074 |
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OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 20V | 5.4A | 30mOhm @ 6.5A, 4.5V | 1.2V @ 20µA | 4.9nC @ 4.5V | 730pF @ 10V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 |
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Infineon Technologies |
MOSFET 2N-CH 20V 0.88A SOT363 |
2.070 |
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OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 20V | 880mA | 400mOhm @ 880mA, 2.5V | 750mV @ 1.6µA | 0.26nC @ 2.5V | 78pF @ 10V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 |
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Infineon Technologies |
MOSFET 2P-CH 30V 1.5A 6TSOP |
5.328 |
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OptiMOS™ | 2 P-Channel (Dual) | Logic Level Gate | 30V | 1.5A | 140mOhm @ 1.5A, 10V | 2V @ 6.3µA | 2.9nC @ 10V | 294pF @ 15V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP-6-6 |
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Infineon Technologies |
MOSFET 2N-CH 55V 15A TDSON-8 |
7.002 |
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OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 55V | 15A | 45mOhm @ 10A, 10V | 2.2V @ 10µA | 20nC @ 10V | 1420pF @ 25V | 21W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
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Infineon Technologies |
MOSFET 2N-CH 55V 20A TDSON-8 |
6.642 |
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OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 55V | 20A | 23mOhm @ 16A, 10V | 2.2V @ 20µA | 42nC @ 10V | 2950pF @ 25V | 45W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
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Infineon Technologies |
MOSFET 2N-CH 55V 20A TDSON-8 |
5.814 |
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OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 55V | 20A | 35mOhm @ 11A, 10V | 2.2V @ 15µA | 23nC @ 10V | 1730pF @ 25V | 30W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
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Infineon Technologies |
MOSFET 2N-CH 150V 8.7A TO-220FP |
2.484 |
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- | 2 N-Channel (Dual) | Standard | 150V | 8.7A | 95mOhm @ 5.2A, 10V | 4.9V @ 50µA | 20nC @ 10V | 810pF @ 25V | 18W | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 Full Pack (Formed Leads) | TO-220-5 Full-Pak |
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Infineon Technologies |
MOSFET 2N-CH 30V 15A DIRECTFET |
3.492 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 15A | 6.6mOhm @ 15A, 10V | 2.35V @ 25µA | 14nC @ 4.5V | 1380pF @ 15V | 2.7W | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric MA | DIRECTFET™ MA |
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Infineon Technologies |
MOSFET 2N-CH 25V 7.8A 8TSSOP |
8.658 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 25V | 7.8A | 11.3mOhm @ 7.8A, 10V | 2.35V @ 25µA | 9.5nC @ 4.5V | 1151pF @ 20V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Infineon Technologies |
MOSFET 2N-CH 20V 10A 8-SOIC |
7.740 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 10A | 13.4mOhm @ 10A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 960pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 30V 13A/28A PQFN |
4.734 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 13A, 28A | 8.6mOhm @ 12A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | 1060pF @ 15V | 2.4W, 3.4W | -55°C ~ 150°C (TJ) | Surface Mount | 18-PowerVQFN | PQFN (5x6) |
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Infineon Technologies |
MOSFET 2P-CH 30V 8A 8SOIC |
3.762 |
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HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 30V | 8A | 21mOhm @ 8A, 10V | 2.4V @ 25µA | 39nC @ 10V | 1300pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 30V 15A DIRECTFET |
8.478 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 15A | 6.6mOhm @ 15A, 10V | 2.35V @ 25µA | 14nC @ 4.5V | 1380pF @ 15V | 2.7W | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric MA | DIRECTFET™ MA |
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Infineon Technologies |
MOSFET 2N-CH 20V 10A 8-SO |
6.984 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 10A | 13.4mOhm @ 10A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 960pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 20V 2.9A 6-TSOP |
5.166 |
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HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 20V | 2.9A | 90mOhm @ 2.9A, 4.5V | 1.2V @ 250µA | 9.6nC @ 4.5V | 650pF @ 16V | 960mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP |
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Infineon Technologies |
MOSFET 2P-CH 20V 2.2A 6-TSOP |
8.604 |
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HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 20V | 2.2A | 135mOhm @ 2.2A, 4.5V | 1.2V @ 250µA | 5.4nC @ 4.5V | 320pF @ 15V | 960mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP |
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Infineon Technologies |
MOSFET N/P-CH 20V 2.7A 6-TSOP |
2.376 |
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HEXFET® | N and P-Channel | Logic Level Gate | 20V | 2.7A, 2.2A | 90mOhm @ 2.7A, 4.5V | 1.25V @ 250µA | 6nC @ 4.5V | 400pF @ 15V | 960mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP |
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Infineon Technologies |
MOSFET 2N-CH 20V 2.7A 6-TSOP |
7.974 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 2.7A | 90mOhm @ 2.7A, 4.5V | 1.25V @ 250µA | 6nC @ 4.5V | 400pF @ 15V | 960mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP |
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Infineon Technologies |
MOSFET N/P-CH 12V 6.3A 8-SOIC |
2.088 |
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HEXFET® | N and P-Channel | Logic Level Gate | 12V | 6.3A, 3A | 34mOhm @ 6A, 4.5V | 1.5V @ 250µA | 8.6nC @ 4.5V | 640pF @ 9V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET N/P-CH 100V 2.1A 8-SOIC |
7.074 |
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HEXFET® | N and P-Channel | Standard | 100V | 2.1A, 1.5A | 210mOhm @ 2.1A, 10V | 4V @ 250µA | 28nC @ 10V | 380pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 30V 4.6A 8TSSOP |
5.328 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4.6A | 30mOhm @ 4.6A, 10V | 2V @ 250µA | 9nC @ 4.5V | 861pF @ 25V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Infineon Technologies |
MOSFET 2P-CH 12V 5.5A 8TSSOP |
4 |
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HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 12V | 5.5A | 25mOhm @ 5.4A, 4.5V | 900mV @ 250µA | 22nC @ 4.5V | 1984pF @ 6V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Infineon Technologies |
MOSFET 2P-CH 20V 3.9A 8TSSOP |
4.608 |
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HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 20V | 3.9A | 51mOhm @ 3.7A, 4.5V | 1.2V @ 250µA | 17nC @ 4.5V | 1090pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Infineon Technologies |
MOSFET 2P-CH 30V 2.3A PQFN |
3.618 |
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HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 30V | 2.3A | 170mOhm @ 3.1A, 10V | 2.4V @ 10µA | 3.7nC @ 10V | 160pF @ 25V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerVDFN | 6-PQFN Dual (2x2) |
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Infineon Technologies |
MOSFET 2N-CH 20V 4.5A PQFN |
4.086 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 4.5A | 45mOhm @ 3.4A, 4.5V | 1.1V @ 10µA | 3.1nC @ 4.5V | 310pF @ 10V | 1.5W | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerVDFN | 6-PQFN Dual (2x2) |
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Infineon Technologies |
MOSFET N/P-CH 55V 4.7/3.4A 8SOIC |
3.348 |
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HEXFET® | N and P-Channel | Logic Level Gate | 55V | 4.7A, 3.4A | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 30V 15A DIRECTFET |
5.166 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 15A | 6.6mOhm @ 15A, 10V | 2.35V @ 25µA | 14nC @ 4.5V | 1380pF @ 15V | 2.7W | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric MA | DIRECTFET™ MA |
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Infineon Technologies |
MOSFET 2N-CH 30V 15A DIRECTFET |
3.942 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 15A | 6.6mOhm @ 15A, 10V | 2.35V @ 25µA | 14nC @ 4.5V | 1380pF @ 15V | 2.7W | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric MA | DIRECTFET™ MA |
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Infineon Technologies |
MOSFET 2P-CH 30V 9.2A 8SOIC |
3.744 |
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HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 30V | 9.2A | 16.3mOhm @ 9.2A, 10V | 2.4V @ 25µA | 38nC @ 10V | 1740pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |