Infineon Technologies Transistor - FET, MOSFET - Array
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Array
ProduttoreInfineon Technologies
Record 393
Pagina 13/14
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Funzione FET | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Capacità di ingresso (Ciss) (Max) @ Vds | Potenza - Max | Temperatura di esercizio | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore |
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Infineon Technologies |
MOSFET 2N-CH 30V 3.6A PQFN |
53 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 3.6A | 63mOhm @ 3.4A, 4.5V | 1.1V @ 10µA | 2.8nC @ 4.5V | 270pF @ 25V | 1.5W | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-PQFN (2x2) |
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Infineon Technologies |
MOSFET 2N-CH 30V 8.1A 8SO |
16.979 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 8.1A | 17.9mOhm @ 8.1A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | 1020pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET N/P-CH 30V 2.3A/2A 6TSOP |
2.340 |
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OptiMOS™ | N and P-Channel | Logic Level Gate | 30V | 2.3A, 2A | 80mOhm @ 2A, 10V | 2V @ 11µA | 500nC @ 10V | 275pF @ 15V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP-6-6 |
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Infineon Technologies |
MOSFET 2N-CH 100V 2.3A 8PQFN |
3.492 |
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HEXFET® | 2 N-Channel (Dual) | Standard | 100V | 2.3A | 195mOhm @ 2.9A, 10V | 4V @ 10µA | 6.3nC @ 10V | 251pF @ 25V | 2.3W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-PQFN (3.3x3.3), Power33 |
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Infineon Technologies |
MOSFET 2N-CH 30V 11A 8PQFN |
7.596 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 11A | 14.9mOhm @ 10A, 10V | 2.35V @ 25µA | 15nC @ 10V | 1165pF @ 10V | 2.7W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-PQFN (3.3x3.3), Power33 |
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Infineon Technologies |
MOSFET 2N-CH 20V 2.1A 6TSOP |
8.424 |
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OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 20V | 2.1A | 70mOhm @ 2.1A, 4.5V | 1.2V @ 11µA | 2.1nC @ 4.5V | 419pF @ 10V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP-6-6 |
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Infineon Technologies |
MOSFET 2P-CH 30V 2A 6TSOP |
7.236 |
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OptiMOS™ | 2 P-Channel (Dual) | Logic Level Gate | 30V | 2A | 80mOhm @ 2A, 10V | 1V @ 11µA | 5nC @ 10V | 500pF @ 15V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP-6-6 |
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Infineon Technologies |
MOSFET 2N-CH 20V 2.3A 6TSOP |
2.826 |
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OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 20V | 2.3A | 57mOhm @ 2.3A, 2.5V | 750mV @ 11µA | 1.7nC @ 2.5V | 259pF @ 10V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP-6-6 |
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Infineon Technologies |
MOSFET 2N-CH 30V 5.3A 8SOIC |
5.652 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 5.3A | 50mOhm @ 2.7A, 10V | 3V @ 100µA | 21nC @ 10V | 515pF @ 25V | 2.4W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 50V 3A 8SOIC |
4.716 |
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HEXFET® | 2 N-Channel (Dual) | Standard | 50V | 3A | 130mOhm @ 3A, 10V | 3V @ 250µA | 15nC @ 10V | 255pF @ 25V | 2.4W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 30V 5.3A 8SOIC |
4.374 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 5.3A | 50mOhm @ 2.7A, 10V | 3V @ 100µA | 21nC @ 10V | 515pF @ 25V | 2.4W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 20V 4A 8SOIC |
7.992 |
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HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4.3A | 90mOhm @ 2.2A, 4.5V | 1.5V @ 250µA | 22nC @ 4.5V | 610pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET N/P-CH 30V 4A/3A 8SOIC |
5.580 |
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HEXFET® | N and P-Channel | Logic Level Gate | 30V | 4A, 3A | 50mOhm @ 2.4A, 10V | 3V @ 250µA | 25nC @ 4.5V | 520pF @ 15V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 30V 6.5A 8SOIC |
6.174 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.9A | 29mOhm @ 6.9A, 10V | 3V @ 250µA | 33nC @ 10V | 755pF @ 25V | 2.4W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 30V 4.9A 8SOIC |
8.640 |
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HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 30V | - | 58mOhm @ 4.9A, 10V | 3V @ 250µA | 34nC @ 10V | 710pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET N/P-CH 30V 8SOIC |
46.243 |
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HEXFET® | N and P-Channel | Logic Level Gate | 30V | 6.5A, 4.9A | 29mOhm @ 5.8A, 10V | 3V @ 250µA | 33nC @ 10V | 650pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 55V 5.1A 8SOIC |
3.330 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 55V | 5.1A | 50mOhm @ 5.1A, 10V | 3V @ 250µA | 44nC @ 10V | 780pF @ 25V | 2.4W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 55V 3.4A 8SOIC |
3.888 |
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HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 55V | 3.4A | 105mOhm @ 3.4A, 10V | 3V @ 250µA | 38nC @ 10V | 690pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET N/P-CH 30V 5.8A 8SOIC |
51.499 |
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HEXFET® | N and P-Channel | Logic Level Gate | 30V | 5.8A, 4.3A | 45mOhm @ 5.8A, 10V | 3V @ 250µA | 25nC @ 10V | 520pF @ 25V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET N/P-CH 30V 3.5A/2.3A 8SO |
8.856 |
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HEXFET® | N and P-Channel | Logic Level Gate | 30V | 3.5A, 2.3A | 100mOhm @ 2.2A, 10V | 3V @ 250µA | 14nC @ 10V | 190pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 25V 16A SA |
5.022 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 25V | 16A | 4.2mOhm @ 16A, 10V | 2.1V @ 35µA | 13nC @ 4.5V | 1350pF @ 13V | 1.7W | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SA | DIRECTFET™ SA |
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Infineon Technologies |
MOSFET 2P-CH 30V 14A DIRECTFET |
4.356 |
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HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 30V | 14A | 7mOhm @ 14A, 10V | 2.4V @ 50µA | 64nC @ 10V | 3241pF @ 15V | 2.1W | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MC | DIRECTFET™ MC |
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Infineon Technologies |
MOSFET 2N-CH 25V 64A/105A PQFN |
4.392 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 25V | 64A, 105A | 3.2mOhm @ 30A, 10V | 2.1V @ 35µA | 15nC @ 4.5V | 1314pF @ 13V | 31W, 38W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) |
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Infineon Technologies |
MOSFET 2N-CH 25V 86A/303A PQFN |
8.910 |
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FASTIRFET™ | 2 N-Channel (Dual) | Logic Level Gate | 25V | 86A, 303A | 2.75mOhm @ 27A, 10V | 2.1V @ 35µA | 20nC @ 4.5V | 1735pF @ 13V | 156W | -55°C ~ 150°C (TJ) | Surface Mount | 32-PowerWFQFN | 32-PQFN (6x6) |
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Infineon Technologies |
MOSFET N/P-CH 30V 6.8A/4.6A 8-SO |
8.892 |
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HEXFET® | N and P-Channel | Logic Level Gate | 30V | 6.8A, 4.6A | 27mOhm @ 6.8A, 10V | 2.3V @ 10µA | 14nC @ 10V | 398pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 25V 25A 24PQFN |
8.226 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 25V | 25A | 3.4mOhm @ 25A, 10V | 2.1V @ 35µA | 15nC @ 4.5V | 1321pF @ 13V | 25W, 28W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | Dual PQFN (5x4) |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON |
8.190 |
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Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Standard | 60V | 20A | 15.5mOhm @ 17A, 10V | 4V @ 20µA | 29nC @ 10V | 2260pF @ 25V | 50W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON |
2.934 |
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Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 60V | 20A | 13.7mOhm @ 17A, 10V | 2.2V @ 20µA | 39nC @ 10V | 2890pF @ 25V | 50W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
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Infineon Technologies |
MOSFET 4N-CH 25V 16A/20A 41PQFN |
4.104 |
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- | 4 N-Channel | Logic Level Gate | 25V | 16A (Tc), 20A (Tc) | 3.9mOhm @ 27A, 10V | 2.1V @ 35µA | 15nC @ 4.5V | 1310pF @ 13V | - | -40°C ~ 150°C (TJ) | Surface Mount | 41-PowerVFQFN | 41-PQFN (6x8) |
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Infineon Technologies |
MOSFET 2 N-CH 30V 8A DSO8 |
5.346 |
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- | 2 N-Channel (Dual) | Logic Level Gate | 30V | 8A (Ta) | 20mOhm @ 8A, 10V | 2V @ 30µA | 17nC @ 5V | 870pF @ 25V | 2W | -55°C ~ 150°C | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 |