Infineon Technologies Transistor - FET, MOSFET - Array
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Array
ProduttoreInfineon Technologies
Record 393
Pagina 1/14
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Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Funzione FET | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Capacità di ingresso (Ciss) (Max) @ Vds | Potenza - Max | Temperatura di esercizio | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore |
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Infineon Technologies |
MOSFET 2N-CH 60V 0.3A SOT363 |
634.812 |
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OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 60V | 300mA | 3Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.6nC @ 10V | 20pF @ 25V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 |
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Infineon Technologies |
MOSFET N/P-CH 20V SOT363 |
575.064 |
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OptiMOS™ | N and P-Channel | Logic Level Gate | 20V | 950mA, 530mA | 350mOhm @ 950mA, 4.5V | 1.2V @ 1.6µA | 0.34nC @ 4.5V | 47pF @ 10V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 |
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Infineon Technologies |
MOSFET 2N-CH 20V 0.95A SOT363 |
283.926 |
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OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 20V | 950mA | 350mOhm @ 950mA, 4.5V | 1.2V @ 1.6µA | 0.32nC @ 4.5V | 63pF @ 10V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 |
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Infineon Technologies |
MOSFET 2N-CH 20V 0.88A SOT363 |
521.580 |
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OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 20V | 880mA | 400mOhm @ 880mA, 2.5V | 750mV @ 1.6µA | 0.26nC @ 2.5V | 78pF @ 10V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 |
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Infineon Technologies |
MOSFET N/P-CH 30V 6.8A/4.6A 8-SO |
578.226 |
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HEXFET® | N and P-Channel | Logic Level Gate | 30V | 6.8A, 4.6A | 27mOhm @ 6.8A, 10V | 2.3V @ 10µA | 14nC @ 10V | 398pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET N/P-CH 20V 1.5A TSOP-6 |
52.638 |
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Automotive, AEC-Q101, OptiMOS™ | N and P-Channel Complementary | Logic Level Gate, 2.5V Drive | 20V | 1.5A | 140mOhm @ 1.5A, 4.5V | 1.2V @ 3.7µA | 0.73nC @ 4.5V | 143pF @ 10V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP-6-6 |
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Infineon Technologies |
MOSFET N/P-CH 30V 2.3A/2A 6TSOP |
25.860 |
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Automotive, AEC-Q101, OptiMOS™ | N and P-Channel Complementary | Logic Level Gate, 4.5V Drive | 30V | 2.3A, 2A | 57mOhm @ 2.3A, 10V | 2V @ 11µA | 1.5nC @ 10V | 275pF @ 15V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP-6-6 |
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Infineon Technologies |
MOSFET 2P-CH 30V 2A 6TSOP |
24.642 |
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Automotive, AEC-Q101, OptiMOS™ | 2 P-Channel (Dual) | Logic Level Gate, 4.5V Drive | 30V | 2A | 80mOhm @ 2A, 10V | 1V @ 11µA | 5nC @ 10V | 500pF @ 15V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP-6-6 |
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Infineon Technologies |
MOSFET N/P-CH 20V 1.7A MICRO8 |
334.356 |
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HEXFET® | N and P-Channel | Logic Level Gate | 20V | 2.4A, 1.7A | 140mOhm @ 1.7A, 4.5V | 700mV @ 250µA | 8nC @ 4.5V | 260pF @ 15V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ |
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Infineon Technologies |
MOSFET 2N-CH 30V 9.7A 8-SOIC |
93.444 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 9.7A | 15.5mOhm @ 9.7A, 10V | 2.35V @ 25µA | 9nC @ 4.5V | 760pF @ 15V | 2W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 50V 3A 8-SOIC |
570.672 |
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HEXFET® | 2 N-Channel (Dual) | Standard | 50V | 3A | 130mOhm @ 3A, 10V | 3V @ 250µA | 30nC @ 10V | 290pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 30V 4.9A 8-SOIC |
29.412 |
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HEXFET® | 2 N-Channel (Dual) | Standard | 30V | 4.9A | 50mOhm @ 2.4A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 30V 8A 8SOIC |
30.876 |
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HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 30V | 8A | 21mOhm @ 8A, 10V | 2.4V @ 25µA | 39nC @ 10V | 1300pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 60V 20A TDSON-8 |
239.598 |
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OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 60V | 20A | 26mOhm @ 17A, 10V | 2.2V @ 10µA | 20nC @ 10V | 1430pF @ 25V | 33W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
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Infineon Technologies |
MOSFET N/P-CH 30V 8SOIC |
30.288 |
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HEXFET® | N and P-Channel | Standard | 30V | - | 29mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET N/P-CH 55V 8-SOIC |
28.560 |
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HEXFET® | N and P-Channel | Standard | 55V | 4.7A, 3.4A | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 30V 4.9A 8-SOIC |
294.210 |
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HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 58mOhm @ 4.9A, 10V | 1V @ 250µA | 34nC @ 10V | 710pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 30V 8A 8DSO |
230.490 |
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OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 30V | 8A | 15mOhm @ 9.3A, 10V | 2V @ 250µA | 17nC @ 10V | 1300pF @ 15V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 |
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Infineon Technologies |
MOSFET N/P-CH 30V 8-SOIC |
98.604 |
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HEXFET® | N and P-Channel | Logic Level Gate | 30V | - | 29mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON |
76.464 |
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Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 100V | 20A | 35mOhm @ 17A, 10V | 2.1V @ 16µA | 17.4nC @ 10V | 1105pF @ 25V | 43W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
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Infineon Technologies |
MOSFET 2P-CH 30V 9.2A 8SOIC |
73.791 |
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HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 30V | 9.2A | 16.3mOhm @ 9.2A, 10V | 2.4V @ 25µA | 38nC @ 10V | 1740pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 55V 4.7A 8-SOIC |
241.194 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 55V | 4.7A | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 12V 9.2A 8-SOIC |
92.250 |
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HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 12V | 9.2A | 17mOhm @ 9.2A, 4.5V | 900mV @ 250µA | 57nC @ 4.5V | 3450pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 60V 8A 8-SOIC |
610.638 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 60V | 8A | 17.8mOhm @ 8A, 10V | 4V @ 50µA | 36nC @ 10V | 1330pF @ 30V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 20V 9A 8-SOIC |
382.044 |
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HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 20V | 9A | 18mOhm @ 9A, 4.5V | 1V @ 250µA | 63nC @ 5V | 2940pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON |
365.664 |
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Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Standard | 60V | 20A | 15.5mOhm @ 17A, 10V | 4V @ 20µA | 29nC @ 10V | 2260pF @ 25V | 50W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PG-TDSON-8-10 |
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Infineon Technologies |
MOSFET 2N-CH 100V 20A TDSON-8 |
215.058 |
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OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 100V | 20A | 22mOhm @ 17A, 10V | 2.1V @ 25µA | 27nC @ 10V | 1755pF @ 25V | 60W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PG-TDSON-8-10 |
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Infineon Technologies |
MOSFET N/P-CH 55V 4.7/3.4A 8SOIC |
35.334 |
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HEXFET® | N and P-Channel | Logic Level Gate | 55V | 4.7A, 3.4A | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 20V 0.39A SOT363 |
1.250.454 |
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OptiMOS™ | 2 P-Channel (Dual) | Logic Level Gate | 20V | 390mA | 1.2Ohm @ 390mA, 4.5V | 1.2V @ 1.5µA | 0.62nC @ 4.5V | 56pF @ 15V | 250mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 |
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Infineon Technologies |
MOSFET 2N-CH 30V 3.6A PQFN |
35.898 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 3.6A | 63mOhm @ 3.4A, 4.5V | 1.1V @ 10µA | 2.8nC @ 4.5V | 270pF @ 25V | 1.5W | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-PQFN (2x2) |