Infineon Technologies Transistor - FET, MOSFET - Array
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Array
ProduttoreInfineon Technologies
Record 393
Pagina 2/14
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Funzione FET | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Capacità di ingresso (Ciss) (Max) @ Vds | Potenza - Max | Temperatura di esercizio | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore |
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Infineon Technologies |
MOSFET 2N-CH 30V 2.4A MICRO8 |
81.738 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 2.4A | 135mOhm @ 1.7A, 10V | 1V @ 250µA | 12nC @ 10V | 210pF @ 25V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ |
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Infineon Technologies |
MOSFET 2N-CH 20V 4.5A PQFN |
85.410 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 4.5A | 45mOhm @ 3.4A, 4.5V | 1.1V @ 10µA | 3.1nC @ 4.5V | 310pF @ 10V | 1.5W | -55°C ~ 150°C (TJ) | Surface Mount | 6-VQFN | 6-PQFN (2x2) |
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Infineon Technologies |
MOSFET N/P-CH 30V 2.7A/2A MICRO8 |
314.280 |
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HEXFET® | N and P-Channel | Logic Level Gate | 30V | 2.7A, 2A | 110mOhm @ 1.7A, 10V | 1V @ 250µA | 12nC @ 10V | 210pF @ 25V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ |
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Infineon Technologies |
MOSFET N/P-CH 25V 8-SOIC |
35.652 |
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HEXFET® | N and P-Channel | Standard | 25V | 3.5A, 2.3A | 100mOhm @ 1A, 10V | 3V @ 250µA | 27nC @ 10V | 330pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET N/P-CH 30V 8-SOIC |
33.402 |
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HEXFET® | N and P-Channel | Logic Level Gate | 30V | 3.5A, 2.3A | 100mOhm @ 2.2A, 10V | 1V @ 250µA | 14nC @ 10V | 190pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 30V 8.1A 8SOIC |
32.406 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 8.1A | 17.9mOhm @ 8.1A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | 1020pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 20V 3.5A 8-SOIC |
35.256 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 3.5A | 100mOhm @ 1.8A, 10V | 3V @ 250µA | 15nC @ 10V | 320pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET N/P-CH 20V 8-SOIC |
28.866 |
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HEXFET® | N and P-Channel | Logic Level Gate | 20V | 5.2A, 4.3A | 50mOhm @ 2.6A, 4.5V | 700mV @ 250µA | 20nC @ 4.5V | 660pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 20V 4.3A 8-SOIC |
30.576 |
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HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4.3A | 90mOhm @ 2.2A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | 610pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 80V 3.6A 8-SOIC |
34.398 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 80V | 3.6A | 73mOhm @ 2.2A, 10V | 4V @ 250µA | 23nC @ 10V | 660pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON |
120.084 |
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Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 40V | 20A | 11.6mOhm @ 17A, 10V | 2.2V @ 15µA | 26nC @ 10V | 1990pF @ 25V | 41W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON |
182.286 |
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Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 40V | 20A | 8.2mOhm @ 17A, 10V | 2.2V @ 22µA | 39nC @ 10V | 3050pF @ 25V | 54W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
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Infineon Technologies |
MOSFET 2N-CH 25V 64A/145A PQFN |
28.980 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 25V | 64A, 145A | 3.2mOhm @ 30A, 10V | 2.1V @ 35µA | 15nC @ 4.5V | 1314pF @ 13V | 31W, 50W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) |
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Infineon Technologies |
MOSFET 2N-CH 150V 8.7A TO-220FP |
20.976 |
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- | 2 N-Channel (Dual) | Standard | 150V | 8.7A | 95mOhm @ 5.2A, 10V | 4.9V @ 50µA | 20nC @ 10V | 810pF @ 25V | 18W | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 Full Pack | TO-220-5 Full-Pak |
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Infineon Technologies |
MOSFET 2N-CH 20V 2.4A MICRO8 |
33.000 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 2.4A | 135mOhm @ 1.7A, 4.5V | 700mV @ 250µA | 8nC @ 4.5V | 260pF @ 15V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ |
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Infineon Technologies |
MOSFET 2N-CH 20V 5.4A MICRO8 |
158.448 |
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HEXFET® | 2 N-Channel (Dual) | Standard | 20V | 5.4A | 30mOhm @ 5.4A, 4.5V | 1.2V @ 250µA | 26nC @ 4.5V | 1310pF @ 15V | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ |
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Infineon Technologies |
MOSFET 2N-CH 20V 8.9A 8-SOIC |
27.822 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 8.9A | 18.3mOhm @ 8.9A, 10V | 2.5V @ 250µA | 7.4nC @ 4.5V | 540pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 30V 6A 8DSO |
326.700 |
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OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6A | 22mOhm @ 7.7A, 10V | 2.1V @ 250µA | 10nC @ 10V | 800pF @ 15V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 |
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Infineon Technologies |
MOSFET 2N-CH 30V 8A 8TDSON |
135.564 |
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OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 30V | 8A | 15mOhm @ 20A, 10V | 2.2V @ 250µA | 13.2nC @ 10V | 1100pF @ 15V | 26W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
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Infineon Technologies |
MOSFET N/P-CH 60V 3.1A/2A 8SOIC |
50.454 |
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SIPMOS® | N and P-Channel | Logic Level Gate | 60V | 3.1A, 2A | 110mOhm @ 3.1A, 10V | 2V @ 20µA | 22.5nC @ 10V | 380pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON |
37.596 |
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Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 55V | 20A | 65mOhm @ 15A, 10V | 2V @ 14µA | 12nC @ 10V | 410pF @ 25V | 43W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PG-TDSON-8-10 |
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Infineon Technologies |
MOSFET 2N-CH 55V 20A TDSON-8-4 |
37.296 |
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Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 55V | 20A | 35mOhm @ 15A, 10V | 2V @ 27µA | 23nC @ 10V | 790pF @ 25V | 65W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON |
77.562 |
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Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 55V | 2A (Tc) | 35mOhm @ 15A, 10V | 2V @ 27µA | 23nC @ 10V | 790pF @ 25V | 65W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PG-TDSON-8-10 |
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Infineon Technologies |
MOSFET 2N-CH 30V 17A/31A TISON8 |
52.740 |
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OptiMOS™ | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate, 4.5V Drive | 30V | 17A, 31A | 5mOhm @ 20A, 10V | 2V @ 250µA | 8.9nC @ 4.5V | 1025pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TISON-8 |
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Infineon Technologies |
MOSFET N/P-CH 30V 4A/3A 8SOIC |
28.158 |
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HEXFET® | N and P-Channel | Logic Level Gate | 30V | 4A, 3A | 50mOhm @ 2.4A, 10V | 3V @ 250µA | 25nC @ 4.5V | 520pF @ 15V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON |
48.120 |
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Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 100V | 20A | 22mOhm @ 17A, 10V | 2.1V @ 25µA | 27nC @ 10V | 1755pF @ 25V | 60W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
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Infineon Technologies |
MOSFET 2N-CH 25V 18A/30A TISON-8 |
45.954 |
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OptiMOS™ | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate, 4.5V Drive | 25V | 18A, 30A | 3.2mOhm @ 20A, 10V | 2V @ 250µA | 12nC @ 4.5V | 1600pF @ 12V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TISON-8 |
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Infineon Technologies |
MOSFET 2N-CH 200V 9.1A TO-220FP |
8.112 |
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- | 2 N-Channel (Dual) | Standard | 200V | 9.1A | 100mOhm @ 5.5A, 10V | 4.9V @ 100µA | 29nC @ 10V | 1240pF @ 25V | 21W | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 Full Pack | TO-220-5 Full-Pak |
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Infineon Technologies |
MOSFET 2P-CH 30V 2.3A PQFN |
91.506 |
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HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 30V | 2.3A | 170mOhm @ 3.1A, 10V | 2.4V @ 10µA | 3.7nC @ 10V | 160pF @ 25V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 6-VQFN Exposed Pad | 6-PQFN (2x2) |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON |
80.388 |
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Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 60V | 20A | 26mOhm @ 17A, 10V | 2.2V @ 10µA | 20nC @ 10V | 1430pF @ 25V | 33W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PG-TDSON-8-10 |