Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 79/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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ON Semiconductor |
MOSFET N-CH 60V 400MA TO-92 |
84.756 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 400mA (Ta) | 4.5V, 10V | 2Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±20V | 50pF @ 25V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 60V 0.23A TO92-3 |
19.716 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 230mA (Tj) | 5V, 10V | 7.5Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±30V | 60pF @ 25V | - | 400mW (Ta), 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Vishay Siliconix |
MOSFET N-CH 40V 60A PPAK 1212-8S |
47.232 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 2.65mOhm @ 15A, 10V | 2.4V @ 250µA | 75nC @ 10V | +20V, -16V | 3750pF @ 20V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S (3.3x3.3) | PowerPAK® 1212-8S |
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Texas Instruments |
MOSFET N-CH 30V 87A 8SON |
23.154 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta), 87A (Tc) | 3V, 8V | 7.9mOhm @ 14A, 8V | 1.7V @ 250µA | 7nC @ 4.5V | +10V, -8V | 950pF @ 15V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET P-CH 30V 25A DPAK |
92.868 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta) | 4V, 5V | 80mOhm @ 25A, 5V | 2V @ 250µA | 20nC @ 5V | ±15V | 1260pF @ 25V | - | 75W (Tj) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 60V 1A SOT223 |
231.822 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 1A (Ta) | 5V, 10V | 1Ohm @ 1.5A, 10V | 3V @ 1mA | - | ±20V | 100pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET P-CH 40V 55A POWERPAKSO-8 |
23.106 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 55A (Tc) | 4.5V, 10V | 14mOhm @ 10A, 10V | 2.5V @ 250µA | 130nC @ 10V | ±20V | 4500pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH 700V 12.5A TO252-3 |
80.658 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 12.5A (Tc) | 10V | 360mOhm @ 3A, 10V | 3.5V @ 150µA | 16.4nC @ 10V | ±16V | 517pF @ 400V | - | 59.4W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET BVDSS: 41V 60V POWERDI333 |
52.302 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 15A (Ta), 80A (Tc) | 4.5V, 10V | 6mOhm @ 20A, 10V | 2V @ 250µA | 41.3nC @ 10V | ±20V | 2090pF @ 30V | - | 2.2W (Ta), 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 20V 21A D-PAK |
39.168 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 20V | 21A (Ta) | 2.5V, 4.5V | 32mOhm @ 8A, 4.5V | 1.2V @ 250µA | 9nC @ 4.5V | ±8V | 710pF @ 10V | - | 3.3W (Ta), 33W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 100V 3.4A 8-SOIC |
222.978 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 3.4A (Ta) | 6V, 10V | 105mOhm @ 3.4A, 10V | 4V @ 250µA | 4nC @ 10V | ±20V | 208pF @ 50V | - | 5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 60V 8A 1212-8 |
29.064 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 8A (Tc) | 4.5V, 10V | 115mOhm @ 3.9A, 10V | 3V @ 250µA | 22nC @ 10V | ±20V | 600pF @ 30V | - | 3.2W (Ta), 19.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET P-CH 30V 6A 1206-8 |
26.556 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 6A (Tc) | 4.5V, 10V | 30mOhm @ 7.2A, 10V | 3V @ 250µA | 42nC @ 10V | ±20V | 1340pF @ 15V | - | 2.5W (Ta), 6.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET™ | 8-SMD, Flat Lead |
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Vishay Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8 |
23.646 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 3.7mOhm @ 10A, 10V | 2.2V @ 250µA | 51nC @ 10V | +20V, -16V | 2425pF @ 15V | - | 5W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH 40V 40A TSDSON-8 |
84.510 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 18A (Ta), 40A (Tc) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2V @ 36µA | 64nC @ 10V | ±20V | 5100pF @ 20V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 100V 6A DPAK |
26.586 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 6A (Tc) | 10V | 250mOhm @ 3A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 280pF @ 25V | - | 30W (Tc) | -65°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
MOSFET N-CH 25V 81A 8-SON |
166.230 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 21A (Ta), 81A (Tc) | 4.5V, 10V | 5.1mOhm @ 20A, 10V | 2.1V @ 250µA | 8.5nC @ 4.5V | +16V, -12V | 1220pF @ 12.5V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET P-CH 30V 9.5A POWER33 |
76.644 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 30V | 9.5A (Ta), 20A (Tc) | 4.5V, 10V | 14.4mOhm @ 9.5A, 10V | 3V @ 250µA | 65nC @ 10V | ±25V | 2865pF @ 15V | - | 2.3W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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Vishay Siliconix |
MOSFET N-CH 20V 35A PPAK 1212-8 |
1.426.842 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 35A (Tc) | 4.5V, 10V | 4.8mOhm @ 20A, 10V | 2.5V @ 250µA | 41nC @ 10V | ±20V | 1600pF @ 10V | - | 3.8W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET P-CH 200V 3.6A DPAK |
56.406 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 3.6A (Tc) | 10V | 1.5Ohm @ 2.2A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 340pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 100V 19A DPAK |
187.482 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 19A (Tc) | 4.5V, 10V | 74mOhm @ 19A, 10V | 2.2V @ 250µA | 40nC @ 10V | ±20V | 1000pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 100V 47A DPAK |
96.000 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 47A (Tc) | 5V, 10V | 28mOhm @ 25A, 10V | 2V @ 1mA | 33nC @ 5V | ±15V | 3805pF @ 25V | - | 167W (Tc) | -55°C ~ 185°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 20V 35A PPAK SO-8 |
160.530 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 35A (Tc) | 4.5V, 10V | 4.8mOhm @ 20A, 10V | 2.5V @ 250µA | 41nC @ 10V | ±20V | 1600pF @ 10V | - | 4.2W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 20V 35A 1212-8 PPAK |
29.436 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 35A (Tc) | 4.5V, 10V | 8.7mOhm @ 17A, 10V | 2.2V @ 250µA | 87nC @ 10V | ±16V | 2620pF @ 10V | - | 3.8W (Ta), 52.1W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 200V 14.1A 1212-8 |
22.956 |
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ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 14.1A (Tc) | 7.5V, 10V | 105mOhm @ 7A, 10V | 4V @ 250µA | 14nC @ 7.5V | ±20V | 608pF @ 100V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Nexperia |
MOSFET N-CH 100V 48A DPAK |
131.886 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 48A (Tc) | 10V | 27mOhm @ 25A, 10V | 4V @ 1mA | 37nC @ 10V | ±20V | 2789pF @ 25V | - | 167W (Tc) | -55°C ~ 185°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 55V DPAK |
92.844 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 10mOhm @ 25A, 10V | 4V @ 1mA | 35nC @ 10V | ±20V | 2453pF @ 25V | - | 167W (Tc) | -55°C ~ 185°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 55V 75A DPAK |
64.650 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 5V, 10V | 10mOhm @ 25A, 10V | 2V @ 1mA | 32nC @ 5V | ±15V | 3519pF @ 25V | - | 167W (Tc) | -55°C ~ 185°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 80V 60A POWERPAKSO-8 |
125.724 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 60A (Tc) | 4.5V, 10V | 8.2mOhm @ 10A, 10V | 2.5V @ 250µA | 60nC @ 10V | ±20V | 3000pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
MOSFET N-CH 60V 37A DPAK |
18.852 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 7.4A (Ta), 37A (Tc) | 5V, 10V | 22mOhm @ 32A, 10V | 2V @ 250µA | 34nC @ 10V | ±20V | 1890pF @ 25V | - | 72W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |