Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 78/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Texas Instruments |
MOSFET NCH 100V 13.1A 6WSON |
23.892 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 13.1A (Tc) | 6V, 10V | 59mOhm @ 5A, 10V | 3.8V @ 250µA | 5.6nC @ 10V | ±20V | 454pF @ 50V | - | 2.5W (Ta), 20.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WSON (2x2) | 6-WDFN Exposed Pad |
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Texas Instruments |
MOSFET N-CH 30V 15A 8SON |
125.646 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 60A (Tc) | 4.5V, 10V | 6mOhm @ 11A, 10V | 1.9V @ 250µA | 12nC @ 4.5V | ±20V | 2050pF @ 15V | - | 2.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SON (3.3x3.3) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 20V 100A DPAK |
21.660 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 100A (Tc) | 2.5V, 4.5V | 4mOhm @ 21A, 4.5V | 1.1V @ 50µA | 72nC @ 4.5V | ±12V | 3770pF @ 10V | - | 63W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 49A DFN5X6 |
23.028 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 49A (Ta), 85A (Tc) | 4.5V, 10V | 2.2mOhm @ 20A, 10V | 2V @ 250µA | 64nC @ 10V | ±20V | 3430pF @ 15V | - | 7.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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ON Semiconductor |
MOSFET N-CHANNEL 60V 49A DPAK |
26.100 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 49A (Tc) | 4.5V, 10V | 8.9mOhm @ 25A, 10V | 2.1V @ 250µA | 8.7nC @ 4.5V | ±20V | 1300pF @ 25V | - | 44W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 20V 20A 8SOIC |
44.202 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 20A (Ta) | 2.5V, 4.5V | 5.5mOhm @ 20A, 4.5V | 1.6V @ 250µA | 43nC @ 10V | ±12V | 4630pF @ 10V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 7A TO252 |
50.244 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 1.56Ohm @ 3.5A, 10V | 4.5V @ 250µA | 24nC @ 10V | ±30V | 1180pF @ 25V | - | 178W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 60V 4A SOT-223 |
30.456 |
|
STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 60V | 4A (Tc) | 10V | 100mOhm @ 1.5A, 10V | 4V @ 250µA | 13nC @ 10V | ±20V | 315pF @ 25V | - | 3.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 40A 8DFN |
52.614 |
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AlphaSGT™ | N-Channel | MOSFET (Metal Oxide) | 60V | 40A (Tc) | 4.5V, 10V | 6.2mOhm @ 20A, 10V | 2.2V @ 250µA | 45nC @ 10V | ±20V | 1650pF @ 30V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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ON Semiconductor |
MOSFET N-CH 40V 110A SO-8FL |
3.873 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 20A (Ta), 111A (Tc) | 4.5V, 10V | 4.2mOhm @ 20A, 10V | 3V @ 250µA | 51nC @ 10V | ±20V | 2700pF @ 25V | - | 3.1W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH 30V 100A 8TDSON |
91.182 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Ta), 100A (Tc) | 4.5V, 10V | 2.6mOhm @ 30A, 10V | 2.2V @ 250µA | 26nC @ 10V | ±20V | 1700pF @ 15V | - | 2.5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 8TDSON |
72.618 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 40A (Tc) | 7V, 10V | 5.4mOhm @ 20A, 10V | 3.4V @ 17µA | 23nC @ 10V | ±20V | 1300pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
20.736 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4.5V, 10V | 13.5mOhm @ 36A, 10V | 3V @ 250µA | 35nC @ 5V | ±16V | 1570pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 40V 21A 78A 5DFN |
58.158 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 21A (Ta), 78A (Tc) | 4.5V, 10V | 4.5mOhm @ 35A, 10V | 2V @ 250µA | 23nC @ 10V | ±20V | 1300pF @ 25V | - | 3.6W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 60V 0.2A TO-92 |
124.368 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Tc) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 3V @ 1mA | - | ±20V | 50pF @ 25V | - | 400mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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ON Semiconductor |
MOSFET N-CH 60V SO8FL |
12.228 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | - | 4.5V, 10V | 9.2mOhm @ 25A, 10V | 2V @ 35µA | 9.5nC @ 10V | ±20V | 880pF @ 25V | - | 3.6W (Ta), 46W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET P-CH 12V 6-MLP 2X2 |
23.298 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 12V | 10A (Ta) | 1.8V, 4.5V | 16mOhm @ 10A, 4.5V | 1V @ 250µA | 29nC @ 6V | ±8V | 3405pF @ 6V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-VDFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 60V 50A TO252-3 |
249.858 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 8.8mOhm @ 50A, 10V | 4V @ 34µA | 48nC @ 10V | ±20V | 3900pF @ 30V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 75V POWERPAK SO8L |
23.868 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 30A (Tc) | 4.5V, 10V | 26mOhm @ 51A, 10V | 2.1V @ 250µA | 34nC @ 10V | ±20V | 1386pF @ 15V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 60V 1A SOT223 |
133.944 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 1A (Ta) | 5V, 10V | 1Ohm @ 1.5A, 10V | 3V @ 1mA | - | ±20V | 100pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 100V 600MA SOT223 |
31.650 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 600mA (Ta) | 5V, 10V | 3Ohm @ 500mA, 10V | 1.5V @ 1mA | - | ±20V | 75pF @ 25V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET P-CH 200V 3.8A 1212-8 |
1.371.462 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 200V | 3.8A (Tc) | 6V, 10V | 1.05Ohm @ 1A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 666pF @ 50V | - | 3.7W (Ta), 52W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET P-CH 30V 8A 6-TSOP |
46.968 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 8A (Tc) | 10V | 34mOhm @ 6.1A, 10V | 3V @ 250µA | 33nC @ 10V | ±20V | 1000pF @ 15V | - | 2W (Ta), 4.2W (Tc) | -55°C ~ 150°C (TA) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC |
29.604 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 17nC @ 5V | ±12V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 80V 2.2A SOT23-3 |
27.318 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 80V | 2.2A (Tc) | 6V, 10V | 270mOhm @ 1.2A, 10V | 4V @ 250µA | 17nC @ 10V | ±20V | 500pF @ 40V | - | 760mW (Ta), 2.5W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CH 80V LFPAK |
303.492 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 62A (Tc) | 5V | 14mOhm @ 15A, 10V | 2.1V @ 1mA | 28.9nC @ 5V | ±10V | 4640pF @ 25V | - | 147W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Nexperia |
MOSFET N-CH 60V LFPAK |
16.860 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 86A (Tc) | 5V, 10V | 7.5mOhm @ 20A, 10V | 2.1V @ 1mA | 31nC @ 5V | ±10V | 4570pF @ 25V | - | 147W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Vishay Siliconix |
MOSFET N-CH 60V 14A DPAK |
35.124 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Tc) | 4V, 5V | 100mOhm @ 8.4A, 5V | 2V @ 250µA | 18nC @ 5V | ±10V | 870pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 500V 2.4A DPAK |
19.662 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.4A (Tc) | 10V | 3Ohm @ 1.4A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 360pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 30A SO8FL |
11.075 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta), 136A (Tc) | 4.5V, 10V | 2.1mOhm @ 30A, 10V | 2.2V @ 250µA | 45.2nC @ 10V | ±20V | 3071pF @ 15V | - | 3.1W (Ta), 64W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |