Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 81/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Microchip Technology |
MOSFET N-CH 350V 0.135A SOT89-3 |
906 |
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- | N-Channel | MOSFET (Metal Oxide) | 350V | 135mA (Tj) | 0V | 35Ohm @ 150mA, 0V | - | - | ±20V | 120pF @ 25V | Depletion Mode | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
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Vishay Siliconix |
MOSFET N-CH 30V 40A 1212-8 PWR |
762.276 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 2.5mOhm @ 15A, 10V | 2.3V @ 250µA | 77nC @ 10V | +20V, -16V | 3595pF @ 15V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Infineon Technologies |
MOSFET N-CH 55V 30A TO252-3 |
23.472 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 4.5V, 10V | 23mOhm @ 22A, 10V | 2V @ 50µA | 42nC @ 10V | ±20V | 1091pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 150V 9A 8SOP |
104.820 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 150V | 9A (Ta) | 10V | 59mOhm @ 4.5A, 10V | 4V @ 200µA | 7nC @ 10V | ±20V | 600pF @ 75V | - | 1.6W (Ta), 42W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 60V 5A 8-SOIC |
47.742 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 5A (Tc) | 4.5V, 10V | 55mOhm @ 2.5A, 10V | 2.5V @ 250µA | 17nC @ 5V | ±20V | 1250pF @ 25V | - | 2.5W (Tc) | 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 60V 11A TO251 |
121.272 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Tc) | 4.5V, 10V | 90mOhm @ 6A, 10V | 2.5V @ 250µA | 9.3nC @ 10V | ±20V | 500pF @ 15V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET P-CH 20V 11A 8SOIC |
22.938 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 11A (Ta) | 2.5V, 4.5V | 14mOhm @ 11A, 4.5V | 1.5V @ 250µA | 60nC @ 4.5V | ±12V | 4044pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Microchip Technology |
MOSFET N-CH 500V 350MA 3DPAK |
16.836 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 350mA (Tj) | 0V | 10Ohm @ 300mA, 0V | - | - | ±20V | 200pF @ 25V | Depletion Mode | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 4A TO252 |
20.472 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 900mOhm @ 2A, 10V | 4.1V @ 250µA | 6nC @ 10V | ±30V | 263pF @ 100V | - | 56.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CHANNEL 60V 8A 8SO |
25.950 |
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Automotive, AEC-Q101, STripFET™ F6 | N-Channel | MOSFET (Metal Oxide) | 60V | 8A (Ta) | 4.5V, 10V | 24mOhm @ 4A, 10V | 2.5V @ 250µA | 27nC @ 10V | ±20V | 1340pF @ 25V | - | 3.2W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 60V 52A POWERPAKSO-8 |
100.188 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 52A (Tc) | 4.5V, 10V | 18mOhm @ 3.5A, 10V | 2.5V @ 250µA | 108nC @ 10V | ±20V | 4586pF @ 30V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Nexperia |
MOSFET N-CH 200V 20A DPAK |
67.818 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 20A (Tc) | 10V | 130mOhm @ 25A, 10V | 4V @ 1mA | 65nC @ 10V | ±20V | 2470pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Microchip Technology |
MOSFET P-CH 60V 0.25A TO92-3 |
20.784 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 250mA (Tj) | 5V, 10V | 12Ohm @ 500mA, 10V | 3.5V @ 1mA | - | ±20V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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ON Semiconductor |
MOSFET N-CH 60V 17A 71A 5DFN |
27.696 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Ta), 71A (Tc) | 4.5V, 10V | 6.1mOhm @ 35A, 10V | 2V @ 53µA | 20nC @ 10V | ±20V | 1400pF @ 25V | - | 61W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Microchip Technology |
MOSFET N-CH 240V 0.134A SOT23-3 |
29.730 |
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- | N-Channel | MOSFET (Metal Oxide) | 240V | 134mA (Tj) | 3V, 4.5V | 15Ohm @ 120mA, 4.5V | 2V @ 1mA | - | ±20V | 50pF @ 25V | - | 360mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CHAN 40V D-S TO-252 |
23.718 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 11.5mOhm @ 30A, 10V | 2.5V @ 250µA | 115nC @ 10V | ±20V | 6600pF @ 25V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 400V 2.7A DPAK |
51.846 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 400V | 2.7A (Tc) | 10V | 3.1Ohm @ 1.35A, 10V | 5V @ 250µA | 23nC @ 10V | ±30V | 680pF @ 25V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 77A DIRECTFET-S2 |
36.840 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 5.8A (Ta), 21A (Tc) | 10V | 36mOhm @ 13A, 10V | 5V @ 25µA | 11nC @ 10V | ±20V | 450pF @ 25V | - | 2.4W (Ta), 30W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET SB | DirectFET™ Isometric SB |
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Infineon Technologies |
MOSFET N-CH 30V 90A TO252-3 |
19.152 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 3.3mOhm @ 90A, 10V | 2.2V @ 45µA | 75nC @ 10V | ±16V | 5100pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 15A POWER33 |
24.066 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Tc) | 4.5V, 10V | 5.7mOhm @ 15A, 10V | 3V @ 250µA | 57nC @ 10V | ±20V | 3405pF @ 10V | - | 2W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 100V 3.2A SOT-223-4 |
340.506 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 3.2A (Ta) | 4.5V, 10V | 108mOhm @ 3.2A, 10V | 2.2V @ 250µA | 7nC @ 10V | ±20V | 315pF @ 50V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
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STMicroelectronics |
MOSFET N-CH 620V 2.2A DPAK |
160.482 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 620V | 2.2A (Tc) | 10V | 3.6Ohm @ 1.1A, 10V | 4.5V @ 50µA | 15nC @ 10V | ±30V | 340pF @ 50V | - | 45W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 30V 35A PPAK 1212-8 |
134.202 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 7.2mOhm @ 15A, 10V | 2.5V @ 250µA | 102nC @ 10V | ±25V | 3595pF @ 15V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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ON Semiconductor |
MOSFET N-CH 600V 3.9A DPAK |
24.978 |
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SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 3.9A (Tc) | 10V | 1.2Ohm @ 2A, 10V | 5V @ 250µA | 16.6nC @ 10V | ±30V | 540pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 44A 8DFN |
230.538 |
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AlphaSGT™ | N-Channel | MOSFET (Metal Oxide) | 60V | 44A (Tc) | 10V | 4.7mOhm @ 20A, 10V | 2.3V @ 250µA | 65nC @ 10V | ±20V | 2520pF @ 30V | - | 56W (Tc) | -55°C ~ 150°C (TA) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Nexperia |
MOSFET N-CH 30V 100A LFPAK |
22.116 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 1.42mOhm @ 25A, 10V | 2.2V @ 1mA | 54.8nC @ 10V | ±20V | 3840pF @ 15V | - | 166W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Nexperia |
MOSFET N-CH 60V 100A LFPAK |
139.728 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 5V | 5.2mOhm @ 25A, 10V | 2.1V @ 1mA | 39.4nC @ 5V | ±10V | 6319pF @ 25V | - | 195W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Nexperia |
MOSFET N-CH 60V 100A LFPAK |
66.126 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 6mOhm @ 25A, 10V | 4V @ 1mA | 45.4nC @ 10V | ±20V | 4021pF @ 25V | - | 195W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 80V 49A 8TDSON |
83.616 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 49A (Tc) | 6V, 10V | 11.7mOhm @ 25A, 10V | 3.8V @ 22µA | 18nC @ 10V | ±20V | 1300pF @ 40V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 60V 16A WDFN8 |
36.870 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 16A (Ta), 70A (Tc) | 4.5V, 10V | 6.5mOhm @ 35A, 10V | 2V @ 250µA | 20nC @ 10V | ±20V | 1400pF @ 25V | - | 3.2W (Ta), 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |