Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 176/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CHAN 800V FP TO-252 |
25.458 |
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E | N-Channel | MOSFET (Metal Oxide) | 800V | 4.3A (Tc) | 10V | 1.27Ohm @ 2A, 10V | 4V @ 250µA | 32nC @ 10V | ±30V | 622pF @ 100V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 80V 110A TO-220 |
23.280 |
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STripFET™ F6 | N-Channel | MOSFET (Metal Oxide) | 80V | 110A (Tc) | 10V | 6.5mOhm @ 55A, 10V | 4.5V @ 250µA | 150nC @ 10V | ±20V | 9130pF @ 40V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 650V 5A TO-220AB |
15.156 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 650V | 5A (Tc) | 10V | 900mOhm @ 2.5A, 10V | 4V @ 250µA | 10nC @ 10V | ±25V | 315pF @ 100V | - | 60W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 9A I2PAK-FP |
17.202 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 450mOhm @ 4.5A, 10V | 4V @ 250µA | 16nC @ 10V | ±25V | 538pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
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STMicroelectronics |
MOSFET N-CH 620V 4.2A IPAK |
26.736 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 620V | 4.2A (Tc) | 10V | 1.6Ohm @ 2.1A, 10V | 4.5V @ 50µA | 26nC @ 10V | ±30V | 680pF @ 50V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 950V 9A TO251 |
14.562 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 950V | 9A (Tc) | 10V | 750mOhm @ 4.5A, 10V | 3.5V @ 220µA | 23nC @ 10V | ±20V | 712pF @ 400V | - | 73W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Alpha & Omega Semiconductor |
100V N-CHANNEL ALPHASGT TM |
17.412 |
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AlphaSGT™ | N-Channel | MOSFET (Metal Oxide) | 100V | 35.5A (Ta), 120A (Tc) | 6V, 10V | 3.6mOhm @ 20A, 10V | 3.5V @ 250µA | 78nC @ 10V | ±20V | 6180pF @ 50V | - | 8.3W (Ta), 277W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 100V 40A TO-220 |
56.448 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 100V | 40A (Tc) | 10V | 35mOhm @ 17.5A, 10V | 4V @ 250µA | 55nC @ 10V | ±20V | 1550pF @ 25V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 600V 7A TO220F |
14.868 |
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SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 5V @ 250µA | 30nC @ 10V | ±30V | 920pF @ 25V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET NCH 650V 45A PG-HDSOP-10 |
13.272 |
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CoolMOS™ G7 | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 150mOhm @ 5.3A, 10V | 4V @ 260µA | 23nC @ 10V | ±20V | 902pF @ 400V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-10-1 | 10-PowerSOP Module |
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STMicroelectronics |
MOSFET N-CH 800V 3A IPAK |
49.698 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 2.5Ohm @ 1.5A, 10V | 5V @ 100µA | 10.5nC @ 10V | ±30V | 175pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
23.478 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 14.5mOhm @ 36A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 1380pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 500V 370MA 4-DIP |
25.326 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 370mA (Ta) | 10V | 3Ohm @ 220mA, 10V | 4V @ 250µA | 24nC @ 10V | ±20V | 360pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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STMicroelectronics |
MOSFET N CH 60V 100A PWRFLAT 5X6 |
28.116 |
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DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 4.5V, 10V | 4.5mOhm @ 11A, 10V | 2.5V @ 250µA | 130nC @ 10V | ±20V | 8900pF @ 25V | - | 4.8W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 600V 5A TO-220 |
18.732 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 600V | 5A (Tc) | 10V | 1.6Ohm @ 2.5A, 10V | 4.5V @ 50µA | 34nC @ 10V | ±30V | 690pF @ 25V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 150V 85A TO263 |
17.028 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 85A (Tc) | 10V | 19mOhm @ 30A, 10V | 3.5V @ 250µA | 120nC @ 10V | ±20V | 6285pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 120A TO263 |
20.880 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 4.5V, 10V | 2mOhm @ 30A, 10V | 2.5V @ 250µA | 200nC @ 10V | ±20V | 15100pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 200V 60A TO263 |
15.852 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 60A (Tc) | 10V | 35mOhm @ 20A, 10V | 3.5V @ 250µA | 135nC @ 10V | ±20V | 5850pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 50V 9.9A I-PAK |
26.580 |
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- | P-Channel | MOSFET (Metal Oxide) | 50V | 9.9A (Tc) | 10V | 280mOhm @ 5.7A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 490pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CH 500V 5A IPAK |
23.826 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 790mOhm @ 2.5A, 10V | 4V @ 250µA | 14nC @ 10V | ±25V | 364pF @ 50V | - | 45W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 600V 3.6A D2PAK |
19.560 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 4.5V @ 250µA | 23nC @ 10V | ±30V | 510pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N CH 40V 80A IPAK |
18.336 |
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DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 6.3mOhm @ 40A, 10V | 4V @ 250µA | 36nC @ 10V | ±20V | 2150pF @ 25V | - | 70W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 500V 5A I-PAK |
28.506 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.7Ohm @ 3A, 10V | 4.5V @ 250µA | 24nC @ 10V | ±30V | 490pF @ 25V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET P-CH 60V 8.8A DPAK |
25.290 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 8.8A (Tc) | 10V | 280mOhm @ 5.3A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 570pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 600V 12A IPAK |
28.602 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 320mOhm @ 6A, 10V | 4V @ 250µA | 19nC @ 10V | ±25V | 700pF @ 100V | - | 110W (Tc) | 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CHAN 800V TO-251 |
27.900 |
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E | N-Channel | MOSFET (Metal Oxide) | 800V | 4.3A (Tc) | 10V | 1.27Ohm @ 2A, 10V | 4V @ 250µA | 32nC @ 10V | ±30V | 622pF @ 100V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Long Leads, IPak, TO-251AB |
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STMicroelectronics |
MOSFET N-CH 500V 9A TO-220 |
18.636 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 500V | 8.5A (Tc) | 10V | 470mOhm @ 4.5A, 10V | 4V @ 250µA | 19nC @ 10V | ±25V | 547pF @ 50V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 30V 120A TO-263 |
16.680 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 120A (Tc) | 4.5V, 10V | 1.5mOhm @ 30A, 10V | 2.5V @ 250µA | 270nC @ 10V | ±20V | 15605pF @ 15V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 11A POWERPAK8X8 |
25.920 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 357mOhm @ 5.5A, 10V | 4V @ 250µA | 62nC @ 10V | ±30V | 1078pF @ 100V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 80V 110A TO263 |
17.160 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 110A (Tc) | 10V | 2.4mOhm @ 80A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 10000pF @ 40V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |