Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 173/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 40V 50A TO252AA |
16.338 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | 2.5V @ 250µA | 130nC @ 10V | ±20V | 5860pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 200V 3.6A D-PAK |
25.062 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 200V | 3.6A (Ta) | 10V | 130mOhm @ 3.6A, 10V | 4.5V @ 250µA | 43nC @ 10V | ±20V | 1228pF @ 100V | - | 3.2W (Ta), 70W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET COOLMOS 700V TO251-3 |
16.458 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 12.5A (Tc) | 10V | 360mOhm @ 3A, 10V | 3.5V @ 150µA | 16.4nC @ 400V | ±16V | 517pF @ 400V | - | 59.5W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CH 650V 5.4A IPAK |
24.390 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 650V | 5.4A (Tc) | 10V | 1.3Ohm @ 2.7A, 10V | 4.5V @ 50µA | 33nC @ 10V | ±30V | 880pF @ 50V | - | 110W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 100V 60A POWERPAKSO |
27.498 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 60A (Tc) | 4.5V, 10V | 6.6mOhm @ 20A, 10V | 3V @ 250µA | 80nC @ 10V | ±20V | 2866pF @ 50V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
TRENCH 8 80V NFET |
13.080 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 23A (Ta), 157A (Tc) | 6V, 10V | 2.8mOhm @ 50A, 10V | 4V @ 250µA | 64nC @ 10V | ±20V | 4120pF @ 40V | - | 3.8W (Ta), 166W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Vishay Siliconix |
MOSFET N-CH 500V 5.3A TO251 IPAK |
24.330 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 5.3A (Tc) | 10V | 1.5Ohm @ 2.5A, 10V | 5V @ 250µA | 20nC @ 10V | ±30V | 325pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 60V 26A D2PAK |
19.506 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 26A (Tc) | 5V, 10V | 35mOhm @ 13A, 10V | 2V @ 250µA | 24nC @ 5V | ±16V | 840pF @ 30V | - | 68W (Tc) | -65°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 5.3A TO252 DPK |
23.220 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 5.3A (Tc) | 10V | 1.5Ohm @ 2.5A, 10V | 5V @ 250µA | 20nC @ 10V | ±30V | 325pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
RS1L180GN IS LOW ON - RESISTANCE |
26.988 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 18A (Ta), 68A (Tc) | 4.5V, 10V | 5.6mOhm @ 18A, 10V | 2.5V @ 100µA | 63nC @ 10V | ±20V | 3230pF @ 30V | - | 3W (Ta) | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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Rohm Semiconductor |
RD3L08BGN IS A POWER MOSFET, SUI |
21.240 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 5.5mOhm @ 80A, 10V | 2.5V @ 100µA | 71nC @ 10V | ±20V | 3620pF @ 30V | - | 119W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Microchip Technology |
MOSFET N-CH 200V 0.25A TO92-3 |
19.494 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 250mA (Tj) | 5V, 10V | 6Ohm @ 500mA, 10V | 1.6V @ 1mA | - | ±20V | 150pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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ON Semiconductor |
PTNG 80/20V IN 3X3CLIP |
66.126 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 11A (Ta), 51A (Tc) | 6V, 10V | 10mOhm @ 16A, 10V | 4V @ 90µA | 22nC @ 10V | ±20V | 1500pF @ 40V | - | 2.4W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerWDFN |
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Rohm Semiconductor |
4V DRIVE PCH MOSFET (CORRESPONDS |
19.668 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 45V | 7A (Ta) | 4V, 10V | 27mOhm @ 7A, 10V | 2.5V @ 1mA | 47.6nC @ 5V | ±20V | 4100pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 900V 1.7A IPAK |
29.892 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 900V | 1.7A (Tc) | 10V | 7.2Ohm @ 850mA, 10V | 5V @ 250µA | 15nC @ 10V | ±30V | 500pF @ 25V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CH 600V 1.2A IPAK |
16.632 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 600V | 1.2A (Tc) | 10V | 8Ohm @ 600mA, 10V | 4.5V @ 50µA | 9.5nC @ 10V | ±30V | 140pF @ 50V | - | 27W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CH 75V 78A TO220 |
17.280 |
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DeepGATE™, STripFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 78A (Tc) | 10V | 11mOhm @ 39A, 10V | 4V @ 250µA | 76nC @ 10V | ±20V | 5015pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 30V 16A PWRFLAT6X5 |
85.314 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 8.5mOhm @ 8A, 10V | 1V @ 250µA | 24nC @ 4.5V | ±16V | 1810pF @ 25V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 525V 2.5A IPAK |
20.628 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 525V | 2.5A (Tc) | 10V | 2.6Ohm @ 1.25A, 10V | 4.5V @ 50µA | 11nC @ 10V | ±30V | 334pF @ 100V | - | 45W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
650V 4A SINGLE N-CHANNEL POWER M |
35.196 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 4A (Tc) | 10V | 2.6Ohm @ 1.2A, 10V | 3.8V @ 250µA | 16.8nC @ 10V | ±30V | 596pF @ 50V | - | 41.6W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
600V 4A SINGLE N-CHANNEL POWER M |
23.742 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 2.2Ohm @ 1.4A, 10V | 3.8V @ 250µA | 17.2nC @ 10V | ±30V | 582pF @ 50V | - | 41.6W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET P-CH 20V 10A 8-SOIC |
26.898 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 10A (Ta) | 1.8V, 4.5V | 8.75mOhm @ 14A, 4.5V | 800mV @ 850µA | 125nC @ 4.5V | ±8V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CHAN 30V POWERPAK SO-8D |
27.018 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 69.9A (Ta), 100A (Tc) | 4.5V, 10V | 0.8mOhm @ 20A, 10V | 2V @ 250µA | 153nC @ 10V | +20V, -16V | 10180pF @ 15V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8DC | PowerPAK® SO-8 |
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STMicroelectronics |
MOSFET N-CH 525V 6.2A D2PAK |
20.718 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 525V | 6A (Tc) | 10V | 980mOhm @ 3.1A, 10V | 4.5V @ 50µA | 34nC @ 10V | ±30V | 737pF @ 100V | - | 90W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 1000V 1.6A IPAK |
41.334 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 1000V | 1.6A (Tc) | 10V | 9Ohm @ 800mA, 10V | 5V @ 250µA | 15.5nC @ 10V | ±30V | 520pF @ 25V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CH 600V 1.4A IPAK |
31.116 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 600V | 1.4A (Tc) | 10V | 8Ohm @ 700mA, 10V | 4.5V @ 50µA | 10nC @ 10V | ±30V | 170pF @ 25V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET P-CH 30V 50A TO252AA |
20.634 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 7mOhm @ 20A, 10V | 2.5V @ 250µA | 146nC @ 10V | ±20V | 5490pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 80V 48A TO252AA |
21.876 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 80V | 48A (Tc) | 10V | 28mOhm @ 12.5A, 10V | 3.5V @ 250µA | 145nC @ 10V | ±20V | 6035pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 525V 4.4A IPAK |
57.858 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 525V | 4.4A (Tc) | 10V | 1.5Ohm @ 2.2A, 10V | 4.5V @ 50µA | 17nC @ 10V | ±30V | 545pF @ 100V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH DPAK TO-252 |
27.330 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 4.2A (Tc) | 10V | 1.45Ohm @ 500mA, 10V | 5V @ 250µA | 7.5nC @ 10V | ±30V | 172pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |