Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 179/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
MOSFET N-CH 75V 80A TO-220AB |
16.290 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 75V | 16A (Ta), 80A (Tc) | 6V, 10V | 6mOhm @ 80A, 10V | 4V @ 250µA | 95nC @ 10V | ±20V | 5150pF @ 25V | - | 255W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
UNIFET N-CHANNEL 500V MOSFET LDT |
9.240 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 16.5A (Tc) | 10V | 380mOhm @ 8.3A, 10V | 5V @ 250µA | 45nC @ 10V | ±30V | 1945pF @ 25V | - | 205W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN (L-Forming) | TO-3P-3, SC-65-3 (Formed Leads) |
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ON Semiconductor |
MOSFET N-CH 60V 220A TO-220-3 |
6.876 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 220A (Tc) | 10V | 3mOhm @ 75A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 10760pF @ 25V | - | 283W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
P-CHANNEL 60-V (D-S) 175C MOSFET |
15.984 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 1050V 4A IPAK |
21.972 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 1050V | 4A (Tc) | 10V | 2Ohm @ 2A, 10V | 5V @ 100µA | 17nC @ 10V | ±30V | 380pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 100V 76A TO-220 |
6.852 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 76A (Tc) | 10V | 13mOhm @ 76A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 4500pF @ 25V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 100V 110A I2PAK |
15.162 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 110A (Tc) | 10V | 4.2mOhm @ 55A, 10V | 4.5V @ 250µA | 117nC @ 10V | ±20V | 8115pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 80V 240A H-PSOF8 |
28.362 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 240A (Tc) | 10V | 2mOhm @ 80A, 10V | 4V @ 250µA | 169nC @ 10V | ±20V | 10000pF @ 40V | - | 357W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
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Vishay Siliconix |
MOSFET N-CH 400V 25A TO-220AB |
21.072 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 25A (Tc) | 10V | 170mOhm @ 13A, 10V | 5V @ 250µA | 88nC @ 10V | ±30V | 1707pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 525V 10A TO-220 |
14.820 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 525V | 10A (Tc) | 10V | 510mOhm @ 5A, 10V | 4.5V @ 50µA | 51nC @ 10V | ±30V | 1400pF @ 50V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 50A TO-220 |
15.552 |
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ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 50A (Tc) | 7.5V, 10V | 8.9mOhm @ 20A, 10V | 4V @ 250µA | 50nC @ 10V | ±20V | 1950pF @ 50V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 80V 120A TO220AB |
9.396 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 7.5V, 10V | 3.4mOhm @ 30A, 10V | 4V @ 250µA | 141nC @ 10V | ±20V | 7910pF @ 40V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 50A D2PAK |
8.184 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 18mOhm @ 43A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2400pF @ 25V | - | 3.7W (Ta), 190W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 650V 6.4A TO-220FP |
7.758 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 650V | 6.4A (Tc) | 10V | 1.2Ohm @ 3.2A, 10V | 4.5V @ 100µA | 41nC @ 10V | ±30V | 1145pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 200V 70A TO-3P |
9.732 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 70A (Tc) | 10V | 35mOhm @ 35A, 10V | 5V @ 250µA | 86nC @ 10V | ±30V | 3970pF @ 25V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 15A DPAK |
9.708 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 78nC @ 10V | ±30V | 1350pF @ 100V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 800V 6A I2PAK-FP |
15.084 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 1.2Ohm @ 3A, 10V | 5V @ 100µA | 13.4nC @ 10V | ±30V | 360pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
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IXYS |
200V/36A ULTRA JUNCTION X3-CLASS |
6.300 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 36A (Tc) | 10V | 45mOhm @ 18A, 10V | 4.5V @ 500µA | 21nC @ 10V | ±20V | 1425pF @ 25V | - | 176W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 650V 10A I2PAKFP |
15.888 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 650V | 10A (Tc) | 10V | 1Ohm @ 3.6A, 10V | 4.5V @ 100µA | 42nC @ 10V | ±30V | 1180pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
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Infineon Technologies |
MOSFET N-CH 75V 100A TO220-3 |
9.960 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 100A (Tc) | 4.5V, 10V | 6.8mOhm @ 80A, 10V | 2V @ 250µA | 246nC @ 10V | ±20V | 5400pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CHANNEL 600V 18A TO220 |
23.040 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 202mOhm @ 9A, 10V | 4V @ 250µA | 92nC @ 10V | ±30V | 1640pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 100V 120A TO220AB |
8.004 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 3.8mOhm @ 20A, 10V | 3.5V @ 250µA | 190nC @ 10V | ±20V | 7230pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CHANNEL 650V 15A TO220 |
19.932 |
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E | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 96nC @ 10V | ±30V | 2460pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 500V 26A TO-220FP |
20.664 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 26A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 86nC @ 10V | ±30V | 1980pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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ON Semiconductor |
PTNG 80/20V IN 5X6CLIP |
22.944 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 22A (Ta), 147A (Tc) | 6V, 10V | 3.1mOhm @ 56A, 10V | 4V @ 310µA | 73nC @ 10V | ±20V | 5350pF @ 40V | - | 2.7W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 55V 80A I2PAK |
18.840 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 5V, 10V | 8mOhm @ 40A, 10V | 2.5V @ 250µA | 100nC @ 4.5V | ±16V | 4350pF @ 25V | - | 300W (Tc) | 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 600V 23A TO-220AB |
8.340 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 23A (Tc) | 10V | 158mOhm @ 12A, 10V | 4V @ 250µA | 95nC @ 10V | ±30V | 2418pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 20A D2PAK |
20.424 |
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FDmesh™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 290mOhm @ 10A, 10V | 5V @ 250µA | 52nC @ 10V | ±30V | 1300pF @ 25V | - | 192W (Tc) | -65°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 900V 8A TO-220 |
21.696 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 900V | 8A (Tc) | 10V | 1.4Ohm @ 4A, 10V | 5V @ 250µA | 58nC @ 10V | ±30V | 2730pF @ 25V | - | 205W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH TO-220AB |
18.660 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 19A (Tc) | 10V | 180mOhm @ 9.5A, 10V | 5V @ 250µA | 33nC @ 10V | ±30V | 1085pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |