Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 181/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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STMicroelectronics |
N-CHANNEL 950 V, 0.41 OHM TYP., |
6.648 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 950V | 7.5A (Ta) | 10V | 500mOhm @ 5.5A, 10V | 5V @ 100µA | 30nC @ 10V | ±30V | 855pF @ 10V | - | 30W | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
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Vishay Siliconix |
MOSFET N-CH 650V 15A TO220AB |
21.612 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 96nC @ 10V | ±30V | 1640pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 500V 26A TO263 |
12.822 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 26A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 86nC @ 10V | ±30V | 1980pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 55V 120A D2PAK |
19.782 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 55V | 120A (Tc) | 10V | 3.5mOhm @ 60A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 6800pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 17A D2PAK |
18.312 |
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FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 17A (Tc) | 10V | 220mOhm @ 8.5A, 10V | 5V @ 250µA | 60nC @ 10V | ±25V | 1800pF @ 50V | - | 140W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V I2PAK-FP |
11.436 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 4V @ 250µA | 17nC @ 10V | ±25V | 580pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
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Infineon Technologies |
MOSFET N-CH 220V TO263-3 |
14.010 |
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OptiMOS™FD | N-Channel | MOSFET (Metal Oxide) | 220V | 72A (Tc) | 10V | 15.6mOhm @ 50A, 10V | 4V @ 270µA | 87nC @ 10V | ±20V | 6930pF @ 110V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V 22.4A TO220 |
19.986 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 1mA | 86nC @ 10V | ±20V | 2340pF @ 100V | - | 34.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 40V 120A TO-220 |
20.358 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 3.7mOhm @ 90A, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | 5100pF @ 25V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 650V 12A TO-220 |
18.636 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 33.3nC @ 10V | ±25V | 983pF @ 50V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 500V 14A TO-220 |
19.308 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 380mOhm @ 6A, 10V | 4.5V @ 100µA | 92nC @ 10V | ±30V | 2000pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 900V 5.8A TO-247 |
19.164 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 900V | 5.8A (Tc) | 10V | 2Ohm @ 2.9A, 10V | 4.5V @ 100µA | 60.5nC @ 10V | ±30V | 1350pF @ 25V | - | 140W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 400V 15A TO-220FP |
8.148 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 400V | 15A (Tc) | 10V | 250mOhm @ 7.5A, 10V | 4.5V @ 100µA | 65nC @ 10V | ±30V | 1900pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
21.516 |
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Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | ±20V | 3240pF @ 100V | - | 277.8W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 500V 22A TO-3P |
7.920 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 230mOhm @ 11A, 10V | 5V @ 250µA | 59.5nC @ 10V | ±30V | 3120pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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STMicroelectronics |
MOSFET N-CH 700V 8.6A TO-220FP |
6.312 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 700V | 8.6A (Tc) | 10V | 850mOhm @ 4.5A, 10V | 4.5V @ 100µA | 90nC @ 10V | ±30V | 2000pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 600V 23A TO247 |
8.868 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 23A (Tc) | 10V | 165mOhm @ 11.5A, 10V | 3.5V @ 250µA | 75nC @ 10V | ±20V | 2434pF @ 380V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET E SERIES 600V TO247AC |
12.852 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 19A (Tc) | 10V | 180mOhm @ 9.5A, 10V | 5V @ 250µA | 33nC @ 10V | ±30V | 1085pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET E SERIES 600V POWERPAK 8X |
26.424 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 100mOhm @ 13.5A, 10V | 5V @ 250µA | 53nC @ 10V | ±30V | 1850pF @ 100V | - | 174W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CHAN 650V 23A POWERPAK |
27.006 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 23A (Tc) | 10V | 150mOhm @ 12A, 10V | 4V @ 250µA | 116nC @ 10V | ±30V | 2814pF @ 100V | - | 202W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 800V 10A TO-3P |
8.676 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 800V | 10A (Tc) | 10V | 1.1Ohm @ 5A, 10V | 5V @ 250µA | 58nC @ 10V | ±30V | 2800pF @ 25V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH 800V 23A |
15.564 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 800V | 23A (Tc) | 10V | 220mOhm @ 11.5A, 10V | 4.5V @ 2.3mA | 105nC @ 10V | ±20V | 4560pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 650V 12A I2PAK |
18.540 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 279mOhm @ 6A, 10V | 5V @ 250µA | 31nC @ 10V | ±25V | 1250pF @ 100V | - | 90W (Tc) | 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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STMicroelectronics |
MOSFET N-CH 100V 120A TO-220 |
11.160 |
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STripFET™ III | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 9.6mOhm @ 60A, 10V | 4V @ 250µA | 57nC @ 10V | ±20V | 3305pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 26A TO-247AC |
10.008 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 26A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 86nC @ 10V | ±30V | 1980pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 100V 120A TO-220 |
16.284 |
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DeepGATE™, STripFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 5.5mOhm @ 60A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 10500pF @ 25V | - | 315W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N CH 800V 6A TO220 |
8.730 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 950mOhm @ 3A, 10V | 5V @ 100µA | 16.5nC @ 10V | ±30V | 450pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 21A TO-220 |
23.808 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 86nC @ 10V | ±30V | 1920pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 900V 11.4A TO-3P |
9.864 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 900V | 11.4A (Tc) | 10V | 960mOhm @ 5.7A, 10V | 5V @ 250µA | 94nC @ 10V | ±30V | 3500pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 23A D2PAK |
21.984 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 23A (Tc) | 10V | 158mOhm @ 12A, 10V | 4V @ 250µA | 95nC @ 10V | ±30V | 2418pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |