Vishay Siliconix Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
ProduttoreVishay Siliconix
Record 3.936
Pagina 80/132
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Vishay Siliconix |
MOSFET N-CH 100V 9.2A TO-220AB |
4.752 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 9.2A (Tc) | 10V | 270mOhm @ 5.5A, 10V | 4V @ 250µA | 16nC @ 10V | ±20V | 360pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 19A TO-220AB |
7.524 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 19A (Tc) | 10V | 200mOhm @ 11A, 10V | 4V @ 250µA | 61nC @ 10V | ±20V | 1400pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 16A TO-247AC |
2.088 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 16A (Tc) | 10V | 300mOhm @ 9.6A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 2600pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 8.1A TO-220AB |
8.028 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 8.1A (Tc) | 10V | 450mOhm @ 5.1A, 10V | 4V @ 250µA | 41nC @ 10V | ±20V | 770pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 15A TO-220AB |
7.542 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 15A (Tc) | 4V, 5V | 160mOhm @ 9A, 5V | 2V @ 250µA | 28nC @ 5V | ±10V | 930pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 1.3A 4-DIP |
8.964 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 1.3A (Ta) | 4V, 5V | 270mOhm @ 780mA, 5V | 2V @ 250µA | 12nC @ 5V | ±10V | 490pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 60V 17A TO-220AB |
3.978 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 4V, 5V | 100mOhm @ 10A, 5V | 2V @ 250µA | 18nC @ 5V | ±10V | 870pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 1.7A 4-DIP |
4.662 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 1.7A (Ta) | 4V, 5V | 200mOhm @ 1A, 5V | 2V @ 250µA | 8.4nC @ 5V | ±10V | 400pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 100V 28A TO-220AB |
8.946 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 28A (Tc) | 4V, 5V | 77mOhm @ 17A, 5V | 2V @ 250µA | 64nC @ 5V | ±10V | 2200pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 9.2A TO-220AB |
4.194 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 9.2A (Tc) | 4V, 5V | 270mOhm @ 5.5A, 5V | 2V @ 250µA | 12nC @ 5V | ±10V | 490pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 5.6A TO-220AB |
7.092 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 4V, 5V | 540mOhm @ 3.4A, 5V | 2V @ 250µA | 6.1nC @ 5V | ±10V | 250pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 30A TO-220AB |
3.780 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4V, 5V | 50mOhm @ 18A, 5V | 2V @ 250µA | 35nC @ 5V | ±10V | 1600pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 2.5A 4-DIP |
4.464 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 2.5A (Ta) | 4V, 5V | 100mOhm @ 1.5A, 5V | 2V @ 250µA | 18nC @ 5V | ±10V | 870pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 60V 10A TO-220AB |
4.176 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Tc) | 4V, 5V | 200mOhm @ 6A, 5V | 2V @ 250µA | 8.4nC @ 5V | ±10V | 400pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 1A 4-DIP |
5.040 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 1A (Ta) | 4V, 5V | 540mOhm @ 600mA, 5V | 2V @ 250µA | 6.1nC @ 5V | ±10V | 250pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 250V 15A TO-247AC |
2.016 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 15A (Tc) | 10V | 280mOhm @ 9A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1400pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
4.860 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 7.7A (Tc) | 10V | 200mOhm @ 4.6A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 300pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 17A TO-220AB |
4.572 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 640pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 21A TO-247AC |
5.994 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 21A (Tc) | 10V | 200mOhm @ 13A, 10V | 4V @ 250µA | 61nC @ 10V | ±20V | 1400pF @ 25V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 10A TO-220AB |
4.644 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Tc) | 10V | 200mOhm @ 6A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 300pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 2.2A TO-220AB |
2.088 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 2.2A (Tc) | 10V | 4.4Ohm @ 1.3A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 350pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 3.6A TO-220AB |
4.230 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 4V @ 250µA | 31nC @ 10V | ±20V | 660pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 60V 18A TO-220AB |
3.400 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 18A (Tc) | 10V | 140mOhm @ 11A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 1100pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 5.6A DPAK |
5.148 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 390pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
7.290 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 4.3A (Tc) | 10V | 540mOhm @ 2.6A, 10V | 4V @ 250µA | 8.3nC @ 10V | ±20V | 180pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 37A TO220FP |
5.004 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 37A (Tc) | 10V | 18mOhm @ 22A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2400pF @ 25V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 500V 4.6A TO220FP |
4.266 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 4.6A (Tc) | 10V | 850mOhm @ 2.8A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1300pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 200V 2.6A DPAK |
8.190 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 2.6A (Tc) | 10V | 1.5Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 200V 20A TO-247AC |
3.186 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 20A (Tc) | 10V | 180mOhm @ 12A, 10V | 4V @ 250µA | 70nC @ 10V | ±20V | 1300pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 38A TO-247AC |
5.814 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 38A (Tc) | 10V | 75mOhm @ 23A, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | 5400pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |