Toshiba Semiconductor and Storage Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreToshiba Semiconductor and Storage
Record 225
Pagina 3/8
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 20V 1.5A CST2C |
4.842 |
|
- | Schottky | 20V | 1.5A | 400mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | 200pF @ 0V, 1MHz | Surface Mount | 0603 (1608 Metric) | CST2C | 125°C (Max) |
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|
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 1.5A CST2C |
6.498 |
|
- | Schottky | 40V | 1.5A | 550mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | 170pF @ 0V, 1MHz | Surface Mount | 0603 (1608 Metric) | CST2C | 125°C (Max) |
|
|
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Toshiba Semiconductor and Storage |
X34 PB-F CST2B SBD DIODE VR:30V, |
3.598 |
|
- | Schottky | 30V | 500mA | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 30V | 118pF @ 0V, 1MHz | Surface Mount | SOD-882 | CST2B | 125°C (Max) |
|
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 1.5A |
7.704 |
|
- | Schottky | 40V | 1.5A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | 170pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | USC | 125°C (Max) |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 100MA SC70 |
3.672 |
|
- | Standard | 400V | 100mA | 1.3V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 500ns | 1µA @ 400V | 5pF @ 0V, 1MHz | Surface Mount | SC-70, SOT-323 | SC-70 | 125°C (Max) |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 1.5A CST2C |
7.182 |
|
- | Schottky | 40V | 1.5A | 640mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 25µA @ 40V | 130pF @ 0V, 1MHz | Surface Mount | 0603 (1608 Metric) | CST2C | 150°C (Max) |
|
|
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Toshiba Semiconductor and Storage |
SMALL-SIGNAL SCHOTTKY BARRIER DI |
8.928 |
|
- | Schottky | 60V | 1A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 40µA @ 60V | 130pF @ 0V, 1MHz | Surface Mount | 2-SMD, Flat Lead | US2H | 150°C (Max) |
|
|
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 20V 1.5A CST2C |
7.002 |
|
- | Schottky | 20V | 1.5A | 400mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | 200pF @ 0V, 1MHz | Surface Mount | 0603 (1608 Metric) | CST2C | 125°C (Max) |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 1A MFLAT |
2.032 |
|
- | Schottky | 40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 50pF @ 10V, 1MHz | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 20V 300MA USC |
7.668 |
|
- | Schottky | 20V | 300mA | 450mV @ 300mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 20V | 46pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | USC | 125°C (Max) |
|
|
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 200MA CST2 |
4.806 |
|
- | Schottky | 30V | 200mA | 600mV @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 30V | 16pF @ 0V, 1MHz | Surface Mount | SOD-882 | CST2 | 125°C (Max) |
|
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 80V 215MA SOT23-3 |
6.642 |
|
- | Standard | 80V | 215mA | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Surface Mount | SOT-23-3 Flat Leads | SOT-23-3 | - |
|
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 140MA SOT23 |
3.472 |
|
- | Schottky | 30V | 140mA | 580mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 1.5ns | 2µA @ 25V | - | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 150°C (Max) |
|
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 20V 1A SFLAT |
7.866 |
|
- | Schottky | 20V | 1A | 360mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | 60pF @ 10V, 1MHz | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 125°C |
|
|
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 100MA SC59 |
8.136 |
|
- | Standard | 200V | 100mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 60ns | 1µA @ 200V | 3pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SC-59 | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 800MA USC |
2.502 |
|
- | Schottky | 30V | 800mA | 220mV @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 30V | 170pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | USC | 125°C (Max) |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL SCHOTTKY BARRIER DI |
4.788 |
|
- | Schottky | 40V | 100mA | 600mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 40V | 11pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | USC | 125°C (Max) |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL SCHOTTKY BARRIER DI |
4.878 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Toshiba Semiconductor and Storage |
SMALL-SIGNAL SCHOTTKY BARRIER DI |
5.562 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Toshiba Semiconductor and Storage |
SINGLE SWITCHING DIODE 200V 0.1A |
3.762 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
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Toshiba Semiconductor and Storage |
SMALL-SIGNAL SCHOTTKY BARRIER DI |
2.196 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL SCHOTTKY BARRIER DI |
4.338 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
SMALL-SIGNAL SCHOTTKY BARRIER DI |
2.646 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
SMALL-SIGNAL SCHOTTKY BARRIER DI |
3.780 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
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Toshiba Semiconductor and Storage |
SMALL-SIGNAL SCHOTTKY BARRIER DI |
4.734 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 100V 250MA ESC |
7.200 |
|
- | Standard | 100V | 250mA | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 3ns | 200nA @ 80V | 0.35pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | ESC | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 100V 250MA USC |
7.578 |
|
- | Standard | 100V | 250mA | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 3ns | 200nA @ 80V | 0.35pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | USC | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 100V 250MA ESC |
7.326 |
|
- | Standard | 100V | 250mA | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 3ns | 200nA @ 80V | 0.35pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | ESC | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 200MA USC |
6.318 |
|
- | Schottky | 30V | 200mA | 500mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 30µA @ 30V | 26pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | USC | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 80V 100MA S-MINI |
7.956 |
|
- | Standard | 80V | 100mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 500nA @ 80V | 4pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 125°C (Max) |