Toshiba Semiconductor and Storage Raddrizzatori - Singoli

Serie

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Tipo di diodo

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Tensione - Inversione CC (Vr) (Max)

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Corrente - Media Rettificata (Io)

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Tensione - Avanti (Vf) (Max) @ If

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Velocità

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Tempo di recupero inverso (trr)

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Corrente - Perdita inversa @ Vr

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Capacità @ Vr, F

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Tipo di montaggio

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Pacchetto / Custodia

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Pacchetto dispositivo fornitore

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Temperatura di esercizio - Giunzione

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli

ProduttoreToshiba Semiconductor and Storage

Record 225

Pagina 2/8

Numero parte	Produttore	Descrizione	Disponibile	Serie	Tipo di diodo	Tensione - Inversione CC (Vr) (Max)	Corrente - Media Rettificata (Io)	Tensione - Avanti (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / Custodia	Pacchetto dispositivo fornitore	Temperatura di esercizio - Giunzione
CRS03(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A SFLAT	271.530	-	Schottky	30V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 30V	40pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
CMS11(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 2A MFLAT	25.014	-	Schottky	40V	2A	550mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	95pF @ 10V, 1MHz	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CMS03(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 3A MFLAT	195.918	-	Schottky	30V	3A	450mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CUS05F30,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 500MA USC	53.562	-	Schottky	30V	500mA	450mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 30V	120pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	-
CRS11(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A SFLAT	29.268	-	Schottky	30V	1A	360mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5mA @ 30V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 125°C
CMF05(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 1KV 500MA MFLAT	146.646	-	Standard	1000V	500mA	2.7V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	100ns	50µA @ 800V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 125°C
CMF04(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 800V 500MA MFLAT	48.870	-	Standard	800V	500mA	2.5V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	100ns	50µA @ 800V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
1SS417,L3M	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 100MA FSC	93.246	-	Schottky	40V	100mA	620mV @ 50mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 40V	15pF @ 0V, 1MHz	Surface Mount	2-SMD, Flat Lead	fSC	125°C (Max)
1SS401(TE85L,F)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 20V 300MA SC70	25.626	-	Schottky	20V	300mA	450mV @ 300mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 20V	46pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SC-70	125°C (Max)
1SS394TE85LF	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 10V 100MA SC59	22.494	-	Schottky	10V	100mA	500mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	20µA @ 10V	40pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59	125°C (Max)
CUHS15F40,H3F	Toshiba Semiconductor and Storage	SMALL-SIGNAL SCHOTTKY BARRIER DI	27.072	*	-	-	-	-	-	-	-	-	-	-	-	-
CUHS20F30,H3F	Toshiba Semiconductor and Storage	SCHOTTKY BARRIER DIODE, 30V/2A,	59.562	-	Schottky	30V	2A	470mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	60µA @ 30V	380pF @ 0V, 1MHz	Surface Mount	2-SMD, Flat Lead	US2H	150°C (Max)
CUHS20S30,H3F	Toshiba Semiconductor and Storage	SCHOTTKY BARRIER DIODE, LOW VF,	26.478	-	Schottky	30V	2A	410mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	390pF @ 0V, 1MHz	Surface Mount	2-SMD, Flat Lead	US2H	150°C (Max)
CUHS20F40,H3F	Toshiba Semiconductor and Storage	SCHOTTKY BARRIER DIODE, 40V/2A,	44.916	-	Schottky	40V	2A	540mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	60µA @ 40V	300pF @ 0V, 1MHz	Surface Mount	2-SMD, Flat Lead	US2H	150°C (Max)
CUHS20S40,H3F	Toshiba Semiconductor and Storage	SCHOTTKY BARRIER DIODE, LOW VF,	23.544	-	Schottky	40V	2A	470mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 40V	290pF @ 0V, 1MHz	Surface Mount	2-SMD, Flat Lead	US2H	150°C (Max)
CES520,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 200MA ESC	3.834	-	Schottky	30V	200mA	600mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 30V	17pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	ESC	125°C (Max)
CES388,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 100MA ESC	4.194	-	Schottky	40V	100mA	600mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 40V	25pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	ESC	125°C (Max)
1SS389,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 10V 100MA ESC	7.326	-	Schottky	10V	100mA	500mV @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	-	20µA @ 10V	40pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	ESC	125°C (Max)
CTS521,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 200MA CST2	3.454	-	Schottky	30V	200mA	500mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	-	30µA @ 30V	25pF @ 0V, 1MHz	Surface Mount	SOD-882	CST2	125°C (Max)
1SS424(TPL3,F)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 20V 200MA SSM	7.866	-	Schottky	20V	200mA	500mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	50µA @ 20V	20pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	ESC	125°C (Max)
1SS417CT,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 100MA FSC	5.832	-	Schottky	40V	100mA	620mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 40V	15pF @ 0V, 1MHz	Surface Mount	2-SMD, Flat Lead	fSC	125°C (Max)
1SS413,L3M	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 20V 50MA FSC	6.660	-	Schottky	20V	50mA	550mV @ 50mA	Small Signal =< 200mA (Io), Any Speed	-	500nA @ 20V	3.9pF @ 0V, 1MHz	Surface Mount	2-SMD, Flat Lead	fSC	125°C (Max)
1SS416CT,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 100MA FSC	8.280	-	Schottky	30V	100mA	500mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	50µA @ 30V	15pF @ 0V, 1MHz	Surface Mount	2-SMD, Flat Lead	fSC	125°C (Max)
CUS05S30,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 500MA USC	5.346	-	Schottky	30V	500mA	340mV @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 10V	55pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	125°C (Max)
1SS196(TE85L,F)	Toshiba Semiconductor and Storage	DIODE GEN PURP 80V 100MA SC59-3	3.500	-	Standard	80V	100mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	500nA @ 80V	3pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59-3	125°C (Max)
CTS05S40,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 500MA CST2	2.754	-	Schottky	40V	500mA	350mV @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	-	30µA @ 10V	42pF @ 0V, 1MHz	Surface Mount	SOD-882	CST2	125°C (Max)
CUS10F30,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A USC	3.132	-	Schottky	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 30V	170pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	125°C (Max)
DSR01S30SL,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 100MA SL2	2.574	-	Schottky	30V	100mA	620mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	700nA @ 30V	8.2pF @ 0V, 1MHz	Surface Mount	0201 (0603 Metric)	SL2	125°C (Max)
1SS190TE85LF	Toshiba Semiconductor and Storage	DIODE GEN PURP 80V 100MA SC59-3	7.092	-	Standard	80V	100mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	500nA @ 80V	4pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59-3	125°C (Max)
1SS307(TE85L,F)	Toshiba Semiconductor and Storage	DIODE GEN PURP 30V 100MA SMINI	7.650	-	Standard	30V	100mA	1.3V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 30V	6pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini	125°C (Max)

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