Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 873/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Renesas Electronics America |
MOSFET N-CH 60V 45A LFPAK |
2.502 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 45A (Ta) | 4.5V, 10V | 4.8mOhm @ 22.5A, 10V | 2.5V @ 1mA | 42nC @ 4.5V | ±20V | 6100pF @ 10V | - | 65W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 60V LFPAK |
3.546 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Ta) | 10V | 8.3mOhm @ 15A, 10V | - | 27nC @ 10V | ±20V | 2000pF @ 10V | - | 55W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 80V 20A LFPAK |
8.388 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 20A (Ta) | 4.5V, 10V | 23mOhm @ 10A, 10V | 2.5V @ 1mA | 14nC @ 4.5V | ±20V | 2050pF @ 10V | - | 45W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 80V 30A LFPAK |
4.842 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 30A (Ta) | 4.5V, 10V | 12mOhm @ 15A, 10V | - | 28nC @ 4.5V | ±20V | 4150pF @ 10V | - | 55W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 80V 40A LFPAK |
4.932 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 40A (Ta) | 4.5V, 10V | 8mOhm @ 20A, 10V | - | 40nC @ 4.5V | ±20V | 6170pF @ 10V | - | 65W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 80V LFPAK |
2.952 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 25A (Ta) | 10V | 13mOhm @ 12.5A, 10V | - | 27nC @ 10V | ±20V | 2000pF @ 10V | - | 55W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 80V 35A LFPAK |
2.682 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 35A (Ta) | 10V | 8.9mOhm @ 17.5A, 10V | - | 40nC @ 10V | ±20V | 3000pF @ 10V | - | 65W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 100V 15A LFPAK |
8.154 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 15A (Ta) | 4.5V, 10V | 39mOhm @ 7.5A, 10V | - | 15nC @ 4.5V | ±20V | 2060pF @ 10V | - | 45W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 100V 20A LFPAK |
6.012 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 20A (Ta) | 4.5V, 10V | 20mOhm @ 10A, 10V | - | 29nC @ 4.5V | ±20V | 4160pF @ 10V | - | 55W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 100V 25A LFPAK |
7.362 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 25A (Ta) | 4.5V, 10V | 13mOhm @ 12.5A, 10V | - | 43nC @ 4.5V | ±20V | 6160pF @ 10V | - | 65W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 100V 23A LFPAK |
6.264 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 23A (Ta) | 10V | 17mOhm @ 11.5A, 10V | - | 35nC @ 10V | ±20V | 2550pF @ 10V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 150V W-PAK |
2.196 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 25A (Ta) | 10V | 48mOhm @ 12.5A, 10V | - | 38nC @ 10V | ±30V | 2400pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Surface Mount | 8-WPAK | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH 150V W-PAK |
7.992 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 25A (Ta) | 10V | 58mOhm @ 12.5A, 10V | - | 20nC @ 10V | ±30V | 1250pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Surface Mount | 8-WPAK | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH 200V W-PAK |
8.856 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 20A (Ta) | 10V | 69mOhm @ 10A, 10V | - | 38nC @ 10V | ±30V | 2400pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Surface Mount | 8-WPAK | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH 600V 0.4A MP3A |
4.158 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 400mA (Ta) | 10V | 42Ohm @ 200mA, 10V | - | 4.3nC @ 10V | ±30V | 37.5pF @ 25V | - | 27.2W (Tc) | 150°C (TJ) | Surface Mount | MP-3A | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 600V 1A MP3A |
5.508 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 1A (Ta) | 10V | 17.5Ohm @ 500mA, 10V | 5V @ 1mA | 5nC @ 10V | ±30V | 37.5pF @ 25V | - | 29.7W (Tc) | 150°C (TJ) | Surface Mount | MP-3A | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 30V 35A 2WPACK |
6.642 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Ta) | 4.5V, 10V | 5.2mOhm @ 17.5A, 10V | 2.5V @ 1mA | 14nC @ 4.5V | ±20V | 2180pF @ 10V | - | 40W (Tc) | 150°C (TJ) | Surface Mount | 8-WPAK | 8-PowerWDFN |
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Vicor |
MOSFET N-CH 5V 60A 3LGA |
2.088 |
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Picor® µRDS(on)FET® | N-Channel | MOSFET (Metal Oxide) | 5V | 60A (Ta) | 3.5V, 4.5V | 0.45mOhm @ 60A, 4.5V | 800mV @ 1mA | 65nC @ 4.5V | ±5V | 7600pF @ 5V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-LGA (4.1x8) | 3-FLGA |
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Nexperia |
MOSFET N-CH 100V 23.4A TO220F |
3.852 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 23.4A (Tc) | 10V | 26.8mOhm @ 5A, 10V | 4V @ 250µA | 30nC @ 10V | ±20V | 1624pF @ 50V | - | 41.1W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
MOSFET N-CH 40V 45A TO263-3-2 |
4.590 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 45A (Tc) | 4.5V, 10V | 7.6mOhm @ 45A, 10V | 2.2V @ 17µA | 30nC @ 10V | +20V, -16V | 2340pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 100A TO252-3-11 |
5.400 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 3.5mOhm @ 100A, 10V | 4V @ 90µA | 128nC @ 10V | ±20V | 10400pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 60V 0.17A SOT23 |
5.580 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 170mA (Ta) | 4.5V, 10V | 8Ohm @ 170mA, 10V | 2V @ 20µA | 1.5nC @ 10V | ±20V | 19pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 200V 14.5A TO220-3 |
2.700 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 14.5A (Tc) | 5V | 200mOhm @ 9A, 5V | 4V @ 1mA | - | ±20V | 1120pF @ 25V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 13.5A TO220-3 |
7.272 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 13.5A (Tc) | 5V | 200mOhm @ 7A, 5V | 2V @ 1mA | - | ±20V | 1600pF @ 25V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 7A TO220-3 |
4.122 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 7A (Tc) | 10V | 400mOhm @ 4.5A, 10V | 4V @ 1mA | - | ±20V | 530pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 5.5A TO220-3 |
7.974 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 7A (Tc) | 10V | 400mOhm @ 4.5A, 10V | 4V @ 1mA | - | ±20V | 530pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 5.5A TO220-3 |
4.140 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 5.5A (Tc) | 10V | 600mOhm @ 4.5A, 10V | 4V @ 1mA | - | ±20V | 530pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 5.5A TO220-3 |
5.706 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 5.5A (Tc) | 10V | 600mOhm @ 4.5A, 10V | 4V @ 1mA | - | ±20V | 530pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 5.5A TO220-3 |
5.544 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 5.5A (Tc) | 5V | 600mOhm @ 3.5A, 5V | 2V @ 1mA | - | ±20V | 840pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 7A TO220-3 |
5.454 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 7A (Tc) | 5V | 400mOhm @ 3.5A, 5V | 2V @ 1mA | - | ±20V | 840pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |