Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 872/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Renesas Electronics America |
MOSFET P-CH 20V 20A TO-252 |
4.158 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 20A (Tc) | 2.5V, 4.5V | 7mOhm @ 10A, 4.5V | - | 57nC @ 4.5V | ±12V | 4400pF @ 10V | - | 1W (Ta), 36W (Tc) | 150°C (TJ) | Surface Mount | TO-252 (MP-3ZK) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 40V MP-25ZP/TO-263 |
3.852 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 110A (Tc) | 10V | 1.8mOhm @ 55A, 10V | - | 260nC @ 10V | ±20V | 17700pF @ 10V | - | 1.5W (Ta), 213W (Tc) | 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 40V MP-25ZP/TO-263 |
3.996 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 82A (Tc) | 5.5V, 10V | 3.5mOhm @ 41A, 10V | - | 93nC @ 10V | ±20V | 5800pF @ 10V | - | 1.5W (Ta), 104W (Tc) | 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET P-CH 40V 100A TO-263 |
6.804 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 3.7mOhm @ 50A, 10V | 2.5V @ 1mA | 320nC @ 10V | ±20V | 15100pF @ 10V | - | 1.8W (Ta), 200W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 55V 160A TO-263-7 |
7.254 |
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- | N-Channel | MOSFET (Metal Oxide) | 55V | 160A (Tc) | 10V | 3mOhm @ 80A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 10350pF @ 25V | - | 1.8W (Ta), 250W (Tc) | 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Renesas Electronics America |
MOSFET N-CH 55V 180A TO-263-7 |
7.038 |
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- | N-Channel | MOSFET (Metal Oxide) | 55V | 180A (Tc) | 10V | 2.3mOhm @ 90A, 10V | 4V @ 250µA | 230nC @ 10V | ±20V | 14250pF @ 25V | - | 1.8W (Ta), 348W (Tc) | 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Renesas Electronics America |
MOSFET N-CH 60V 23A 8HSON |
5.832 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 23A (Tc) | 5V, 10V | 27mOhm @ 11.5A, 10V | 2.5V @ 250µA | 41nC @ 10V | ±20V | 1800pF @ 25V | - | 1W (Ta), 60W (Tc) | 175°C (TJ) | Surface Mount | 8-HSON | 8-SMD, Flat Lead Exposed Pad |
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Renesas Electronics America |
MOSFET N-CH 60V 33A 8HSON |
3.672 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 33A (Tc) | 5V, 10V | 14mOhm @ 16.5A, 10V | 2.5V @ 250µA | 78nC @ 10V | ±20V | 3900pF @ 25V | - | 1W (Ta), 97W (Tc) | 175°C (TJ) | Surface Mount | 8-HSON | 8-SMD, Flat Lead Exposed Pad |
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Renesas Electronics America |
MOSFET N-CH 40V 35A 8HSON |
2.538 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 35A (Tc) | 10V | 10mOhm @ 17.5A, 10V | 4V @ 250µA | 54nC @ 10V | ±20V | 2850pF @ 25V | - | 1W (Ta), 77W (Tc) | 175°C (TJ) | Surface Mount | 8-HSON | 8-SMD, Flat Lead Exposed Pad |
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Renesas Electronics America |
MOSFET P-CH 40V 36A TO-252 |
6.768 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 36A (Tc) | 4.5V, 10V | 17mOhm @ 18A, 10V | 2.5V @ 250µA | 55nC @ 10V | ±20V | 2800pF @ 10V | - | 1.2W (Ta), 56W (Tc) | 175°C (TJ) | Surface Mount | TO-252 (MP-3ZK) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET P-CH 60V 36A TO-263 |
2.466 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 36A (Tc) | 4.5V, 10V | 29.5mOhm @ 18A, 10V | 2.5V @ 1mA | 54nC @ 10V | ±20V | 3100pF @ 10V | - | 1.8W (Ta), 56W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET P-CH 30V 50A 8HSON |
8.010 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 5V, 10V | 8.4mOhm @ 25A, 10V | 2.5V @ 250µA | 96nC @ 10V | ±20V | 3500pF @ 25V | - | 1W (Ta), 102W (Tc) | 175°C (TJ) | Surface Mount | 8-HSON | 8-SMD, Flat Lead Exposed Pad |
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Renesas Electronics America |
MOSFET P-CH 40V 50A TO-252 |
8.730 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 9.6mOhm @ 25A, 10V | 2.5V @ 250µA | 100nC @ 10V | ±20V | 5000pF @ 10V | - | 1.2W (Ta), 84W (Tc) | 175°C (TJ) | Surface Mount | TO-252 (MP-3ZK) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 30V 60A TO-252 |
6.714 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 10V | 3.8mOhm @ 30A, 10V | 4V @ 250µA | 135nC @ 10V | ±20V | 7500pF @ 25V | - | 1.2W (Ta), 105W (Tc) | 175°C (TJ) | Surface Mount | TO-252 (MP-3ZK) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 40V 75A 8HSON |
3.508 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 5.5mOhm @ 37.5A, 10V | 4V @ 250µA | 96nC @ 10V | ±20V | 5430pF @ 25V | - | 1W (Ta), 120W (Tc) | 175°C (TJ) | Surface Mount | 8-HSON | 8-SMD, Flat Lead Exposed Pad |
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Renesas Electronics America |
MOSFET P-CH 30V 75A 8HSON |
2.484 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 75A (Tc) | 5V, 10V | 6.2mOhm @ 37.5A, 10V | 2.5V @ 250µA | 141nC @ 10V | ±20V | 4800pF @ 25V | - | 1W (Ta), 138W (Tc) | 175°C (TJ) | Surface Mount | 8-HSON | 8-SMD, Flat Lead Exposed Pad |
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Renesas Electronics America |
MOSFET P-CH 40V 75A 8HSON |
6.984 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 5V, 10V | 9.7mOhm @ 37.5A, 10V | 2.5V @ 250µA | 140nC @ 10V | ±20V | 4800pF @ 25V | - | 1W (Ta), 138W (Tc) | 175°C (TJ) | Surface Mount | 8-HSON | 8-SMD, Flat Lead Exposed Pad |
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Renesas Electronics America |
MOSFET N-CH 40V 80A TO-263 |
2.322 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 4.5mOhm @ 40A, 10V | 2.5V @ 250µA | 135nC @ 10V | ±20V | 6900pF @ 25V | - | 1.8W (Ta), 115W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 40V 80A TO-263 |
3.042 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4.5mOhm @ 40A, 10V | 4V @ 250µA | 135nC @ 10V | ±20V | 7350pF @ 25V | - | 1.8W (Ta), 115W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 60V 80A TO-263 |
3.366 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 8.3mOhm @ 40A, 10V | 2.5V @ 250µA | 128nC @ 10V | ±20V | 6900pF @ 25V | - | 1.8W (Ta), 115W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 55V 82A TO-263 |
4.950 |
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- | N-Channel | MOSFET (Metal Oxide) | 55V | 82A (Tc) | 10V | 5.2mOhm @ 41A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 9600pF @ 25V | - | 1.8W (Ta), 143W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET P-CH 40V 83A TO-263 |
2.970 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 83A (Tc) | 4.5V, 10V | 5.3mOhm @ 41.5A, 10V | 2.5V @ 1mA | 200nC @ 10V | ±20V | 9820pF @ 10V | - | 1.8W (Ta), 150W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET P-CH 60V 83A TO-263 |
6.732 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 83A (Tc) | 4.5V, 10V | 8.8mOhm @ 41.5A, 10V | 2.5V @ 1mA | 190nC @ 10V | ±20V | 10100pF @ 10V | - | 1.8W (Ta), 150W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 30V 88A TO-263 |
4.860 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 88A (Tc) | 4.5V, 10V | 2.4mOhm @ 44A, 10V | 2.5V @ 250µA | 250nC @ 10V | ±20V | 13500pF @ 25V | - | 1.8W (Ta), 200W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 60V 90A TO-252 |
2.340 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 4.5V, 10V | 7.8mOhm @ 45A, 10V | 2.5V @ 250µA | 135nC @ 10V | ±20V | 6900pF @ 25V | - | 1.2W (Ta), 105W (Tc) | 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 30V 60A LFPAK |
8.892 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Ta) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | - | 42nC @ 4.5V | ±20V | 6000pF @ 10V | Schottky Diode (Body) | 65W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 40V 35A LFPAK |
9.613 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 35A (Ta) | 4.5V, 10V | 7mOhm @ 17.5A, 10V | - | 14nC @ 4.5V | ±20V | 2010pF @ 10V | - | 45W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 40V 45A LFPAK |
5.544 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 45A (Ta) | 4.5V, 10V | 3.5mOhm @ 22.5A, 10V | - | 26nC @ 4.5V | ±20V | 4030pF @ 10V | - | 55W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 40V 40A LFPAK |
6.498 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 40A (Ta) | 10V | 4.9mOhm @ 20A, 10V | - | 25nC @ 10V | ±20V | 2000pF @ 10V | - | 55W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 60V 35A LFPAK |
3.960 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 35A (Ta) | 4.5V, 10V | 7mOhm @ 17.5A, 10V | - | 29nC @ 4.5V | ±20V | 4100pF @ 10V | - | 55W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |