Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 870/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Renesas Electronics America |
MOSFET N-CH 55V 55A TO-252 |
5.994 |
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- | N-Channel | MOSFET (Metal Oxide) | 55V | 55A (Tc) | 4.5V, 10V | 9.5mOhm @ 28A, 10V | 2.5V @ 250µA | 96nC @ 10V | ±20V | 4800pF @ 25V | - | 1.2W (Ta), 77W (Tc) | 175°C (TJ) | Surface Mount | TO-252 (MP-3ZK) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 55V 55A TO-252 |
6.390 |
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- | N-Channel | MOSFET (Metal Oxide) | 55V | 55A (Tc) | 10V | 10mOhm @ 28A, 10V | - | 90nC @ 10V | ±20V | 5250pF @ 25V | - | 1.2W (Ta), 77W (Tc) | 175°C (TJ) | Surface Mount | TO-252 (MP-3ZK) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 30V 60A TO-263 |
8.226 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 10V | 4.8mOhm @ 30A, 10V | 4V @ 250µA | 93nC @ 10V | ±20V | 5300pF @ 25V | - | 1.8W (Ta), 88W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 40V 60A TO-263 |
8.568 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 60A (Tc) | 10V | 6.1mOhm @ 30A, 10V | 4V @ 250µA | 95nC @ 10V | ±20V | 5100pF @ 25V | - | 1.8W (Ta), 88W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 40V 60A TO-220 |
4.302 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 60A (Tc) | 10V | 6.3mOhm @ 30A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 3200pF @ 25V | - | 1.8W (Ta), 88W (Tc) | 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Renesas Electronics America |
MOSFET N-CH 55V 60A TO-263 |
3.636 |
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- | N-Channel | MOSFET (Metal Oxide) | 55V | 60A (Tc) | 10V | 9.4mOhm @ 30A, 10V | 4V @ 250µA | 92nC @ 10V | ±20V | 5600pF @ 25V | - | 1.8W (Ta), 88W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 100V 70A TO-263 |
3.132 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 70A (Tc) | 10V | 20mOhm @ 35A, 10V | 3.3V @ 250µA | 75nC @ 10V | ±20V | 3750pF @ 25V | - | 1.8W (Ta), 120W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 40V 80A TO-263 |
3.816 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 8mOhm @ 40A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 3300pF @ 25V | - | 1.8W (Ta), 120W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 55V 80A TO-263 |
7.470 |
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- | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 11mOhm @ 40A, 10V | 2.5V @ 250µA | 75nC @ 10V | ±20V | 4400pF @ 25V | - | 1.8W (Ta), 120W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 55V 80A TO-220 |
2.412 |
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- | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 11mOhm @ 40A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 3600pF @ 25V | - | 1.8W (Ta), 120W (Tc) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Renesas Electronics America |
MOSFET N-CH 55V 80A TO-262 |
5.814 |
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- | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 6.9mOhm @ 40A, 10V | 2.5V @ 250µA | 135nC @ 10V | ±20V | 6900pF @ 25V | - | 1.8W (Ta), 115W (Tc) | 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Renesas Electronics America |
MOSFET N-CH 60V 80A TO-220 |
4.554 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 8.6mOhm @ 40A, 10V | 2.5V @ 250µA | 128nC @ 10V | ±20V | 6900pF @ 25V | - | 1.8W (Ta), 115W (Tc) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Renesas Electronics America |
MOSFET N-CH 40V 82A TO-262 |
7.038 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 82A (Tc) | 10V | 4.2mOhm @ 41A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 9750pF @ 25V | - | 1.8W (Ta), 143W (Tc) | 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Renesas Electronics America |
MOSFET N-CH 40V 82A TO-263 |
8.982 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 82A (Tc) | 4.5V, 10V | 3.5mOhm @ 41A, 10V | 2.5V @ 250µA | 150nC @ 10V | ±20V | 9000pF @ 25V | - | 1.8W (Ta), 143W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 75V 84A TO-263 |
4.140 |
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- | N-Channel | MOSFET (Metal Oxide) | 75V | 84A (Tc) | 10V | 12.5mOhm @ 42A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 8400pF @ 25V | - | 1.8W (Ta), 200W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 40V 88A TO-262 |
7.542 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 88A (Tc) | 10V | 3.4mOhm @ 44A, 10V | 4V @ 250µA | 250nC @ 10V | ±20V | 15000pF @ 25V | - | 1.8W (Ta), 200W (Tc) | 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Renesas Electronics America |
MOSFET N-CH 55V 88A TO-263 |
6.948 |
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- | N-Channel | MOSFET (Metal Oxide) | 55V | 88A (Tc) | 10V | 3.9mOhm @ 44A, 10V | 4V @ 250µA | 250nC @ 10V | ±20V | 14400pF @ 25V | - | 1.8W (Ta), 200W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 75V 88A TO-263 |
6.012 |
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- | N-Channel | MOSFET (Metal Oxide) | 75V | 88A (Tc) | 10V | 8.5mOhm @ 44A, 10V | 4V @ 250µA | 230nC @ 10V | ±20V | 12300pF @ 25V | - | 1.8W (Ta), 288W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 75V 88A TO-220 |
4.788 |
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- | N-Channel | MOSFET (Metal Oxide) | 75V | 88A (Tc) | 10V | 8.5mOhm @ 44A, 10V | 4V @ 250µA | 230nC @ 10V | ±20V | 12300pF @ 25V | - | 1.8W (Ta), 288W (Tc) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Renesas Electronics America |
MOSFET N-CH 40V 90A TO-263 |
3.870 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 3mOhm @ 45A, 10V | 4V @ 250µA | 182nC @ 10V | ±20V | 11200pF @ 25V | - | 1.8W (Ta), 217W (Tc) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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NXP |
MOSFET N-CH 30V 6TSOP |
4.536 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 6.7A (Tj) | 4.5V, 10V | 20mOhm @ 6.7A, 10V | 2.5V @ 250µA | 18.6nC @ 10V | ±20V | 630pF @ 15V | - | 545mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
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Diodes Incorporated |
MOSFET N-CH 30V 5.3A PWRDI333-8 |
4.194 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 5.3A (Ta) | 4.5V, 10V | 18.6mOhm @ 10A, 10V | 1.8V @ 250µA | 11.3nC @ 10V | ±25V | 580pF @ 15V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET N-CH 60V 100MA 3-DFN |
4.644 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 100mA (Ta) | 1.5V, 4V | 2Ohm @ 100mA, 4V | 1V @ 250µA | 0.45nC @ 4.5V | ±20V | 32pF @ 25V | - | 470mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-X1DFN1006 | 3-UFDFN |
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Diodes Incorporated |
MOSFET P-CH 50V 180MA 3-DFN |
7.002 |
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- | P-Channel | MOSFET (Metal Oxide) | 50V | 180mA (Ta) | 2.5V, 5V | 8Ohm @ 100mA, 5V | 2.1V @ 250µA | - | ±20V | 27pF @ 25V | - | 470mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-X1DFN1006 | 3-UFDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 16A TO-220SIS |
8.964 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 16A | - | 270mOhm @ 8A, 10V | - | - | - | - | - | - | - | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 16A TO-220SIS |
5.778 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 16A (Ta) | - | 330mOhm @ 8A, 10V | 4V @ 1mA | 45nC @ 10V | - | 2600pF @ 25V | - | - | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 20A TO-220SIS |
6.282 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 250V | 20A (Ta) | 10V | 100mOhm @ 10A, 10V | 3.5V @ 1mA | 55nC @ 10V | ±20V | 2550pF @ 100V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 40A DPAK-3 |
4.842 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4.5V, 10V | 10.8mOhm @ 20A, 10V | 2.3V @ 100µA | 17.5nC @ 10V | ±20V | 1150pF @ 10V | - | - | - | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 40A DPAK-3 |
5.940 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 100V | 40A (Ta) | 10V | 18mOhm @ 20A, 10V | 4V @ 1mA | 61nC @ 10V | ±20V | 3110pF @ 10V | - | 93W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 45A DPAK-3 |
4.734 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 30V | 45A (Ta) | 4.5V, 10V | 9.7mOhm @ 22.5A, 10V | 2.3V @ 200µA | 25nC @ 10V | ±20V | 1500pF @ 10V | - | - | - | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |