Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 841/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC |
6.966 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V | 12mOhm @ 15A, 4.5V | 1V @ 250µA | 33nC @ 5V | ±12V | 2335pF @ 16V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 13.6A 8-SOIC |
4.410 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13.6A (Ta) | 4.5V, 10V | 9.1mOhm @ 13A, 10V | 1V @ 250µA | 14nC @ 4.5V | ±20V | 1010pF @ 15V | - | 2.5W (Ta) | -55°C ~ 155°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 17.2A 8-SOIC |
8.514 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 17.2A (Ta) | 4.5V, 10V | 5.6mOhm @ 17.2A, 10V | 2.2V @ 250µA | 36nC @ 4.5V | ±20V | 2910pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 60V 100A 5X6 PQFN |
5.886 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 21A (Ta), 100A (Tc) | 10V | 4.1mOhm @ 50A, 10V | 4V @ 150µA | 100nC @ 10V | ±20V | 4175pF @ 30V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 75V 17A 5X6 PQFN |
7.848 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 17A (Ta), 100A (Tc) | 10V | 5.9mOhm @ 50A, 10V | 4V @ 150µA | 98nC @ 10V | ±20V | 4290pF @ 25V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 13A 5X6 PQFN |
3.006 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 13A (Ta), 100A (Tc) | 10V | 9mOhm @ 50A, 10V | 4V @ 150µA | 98nC @ 10V | ±20V | 4340pF @ 25V | - | 3.6W (Ta), 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 60V 100A 5X6 PQFN |
2.556 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 21A (Ta), 100A (Tc) | 10V | 5.6mOhm @ 50A, 10V | 4V @ 250µA | 75nC @ 10V | ±20V | 3090pF @ 25V | - | 3.6W (Ta), 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 100V 5X6 PQFN |
3.582 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 11A (Ta), 63A (Tc) | 10V | 12.4mOhm @ 37A, 10V | 4V @ 100µA | 72nC @ 10V | ±20V | 3152pF @ 25V | - | 3.6W (Ta), 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 60V 16A 5X6 PQFN |
6.498 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 16A (Ta), 89A (Tc) | 10V | 6.7mOhm @ 50A, 10V | 4V @ 100µA | 60nC @ 10V | ±20V | 2490pF @ 25V | - | 3.6W (Ta), 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 75V 5X6 PQFN |
3.420 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 13A (Ta), 71A (Tc) | 10V | 9.6mOhm @ 43A, 10V | 4V @ 100µA | 59nC @ 10V | ±20V | 2474pF @ 25V | - | 3.6W (Ta), 105W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 100V 10A 5X6 PQFN |
6.228 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Ta), 55A (Tc) | 10V | 14.9mOhm @ 33A, 10V | 4V @ 100µA | 59nC @ 10V | ±20V | 2570pF @ 25V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 60V 40A 5X6 PQFN |
7.992 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Ta), 40A (Tc) | 10V | 14.4mOhm @ 24A, 10V | 4V @ 50µA | 35nC @ 10V | ±20V | 1256pF @ 25V | - | 3.6W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 20V 100A 5X6 PQFN |
8.370 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 49A (Ta), 100A (Tc) | 2.5V, 10V | 0.95mOhm @ 50A, 10V | 1.1V @ 150µA | 230nC @ 4.5V | ±12V | 10890pF @ 10V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 24A 5X6 PQFN |
4.140 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Ta), 76A (Tc) | 4.5V, 10V | 3.5mOhm @ 24A, 10V | 2.35V @ 50µA | 30nC @ 4.5V | ±20V | 3100pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 30V 11A 3X3 PQFN |
2.862 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta), 24A (Tc) | 10V, 20V | 10mOhm @ 11A, 20V | 2.4V @ 25µA | 48nC @ 10V | ±25V | 1543pF @ 25V | - | 2.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (3x3) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 150V 83A D2PAK |
8.964 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 83A (Tc) | 10V | 15mOhm @ 33A, 10V | 5V @ 250µA | 107nC @ 10V | ±30V | 4530pF @ 25V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 100A 5X6 PQFN |
6.624 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 29A (Ta), 100A (Tc) | 4.5V, 10V | 2.4mOhm @ 50A, 10V | 2.5V @ 150µA | 82nC @ 10V | ±16V | 4730pF @ 25V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 60V 100A 5X6 PQFN |
3.276 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Ta), 100A (Tc) | 4.5V, 10V | 4.4mOhm @ 50A, 10V | 2.5V @ 150µA | 90nC @ 10V | ±16V | 5360pF @ 25V | - | 3.6W (Ta), 160W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 20V 4.2A SOT-23-3 |
7.398 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 2.5V, 4.5V | 45mOhm @ 4.2A, 4.5V | 1.2V @ 250µA | 12nC @ 5V | ±12V | 740pF @ 15V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 20V 3.7A SOT-23-3 |
2.070 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 3.7A (Ta) | 2.5V, 4.5V | 65mOhm @ 3.7A, 4.5V | 1.2V @ 250µA | 12nC @ 5V | ±12V | 633pF @ 10V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 55V 16A DPAK |
3.402 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 16A (Tc) | 4.5V, 10V | 58mOhm @ 9.6A, 10V | 3V @ 250µA | 9.9nC @ 5V | ±16V | 380pF @ 25V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 27A 8-SO |
8.226 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 27A (Ta) | 2.5V, 4.5V | 2.45mOhm @ 27A, 4.5V | 1.1V @ 100µA | 195nC @ 4.5V | ±12V | 8555pF @ 16V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 25V DIRECTFET S1 |
7.236 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 17A (Ta), 63A (Tc) | 4.5V, 10V | 3.8mOhm @ 17A, 10V | 2.35V @ 25µA | 20nC @ 4.5V | ±20V | 1810pF @ 13V | - | 1.8W (Ta), 26W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET S1 | DirectFET™ Isometric S1 |
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Infineon Technologies |
MOSFET N-CH 25V DIRECTFET MX |
3.114 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 32A (Ta), 200A (Tc) | 4.5V, 10V | 1.7mOhm @ 32A, 10V | 2.35V @ 100µA | 47nC @ 4.5V | ±20V | 4420pF @ 13V | Schottky Diode (Body) | 2.8W (Ta), 100W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET P-CH 30V 16A 8-SO |
3.490 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 6.6mOhm @ 16A, 10V | 2.4V @ 50µA | 92nC @ 10V | ±20V | 2820pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 15A 8-SO |
8.892 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta) | 4.5V, 10V | 7.2mOhm @ 15A, 10V | 2.4V @ 50µA | 98nC @ 10V | ±20V | 2590pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 12A 8-SO |
8.100 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 11.9mOhm @ 12A, 10V | 2.4V @ 25µA | 52nC @ 10V | ±20V | 1680pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 9.2A 8-SO |
2.862 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 9.2A (Ta) | 4.5V, 10V | 19.4mOhm @ 9.2A, 10V | 2.4V @ 25µA | 38nC @ 10V | ±20V | 1110pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 5.4A 8-SO |
6.444 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 5.4A (Ta) | 4.5V, 10V | 59mOhm @ 5.4A, 10V | 2.4V @ 10µA | 14nC @ 10V | ±20V | 386pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 12A 8-SO |
8.802 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 10V, 20V | 8.5mOhm @ 12A, 20V | 2.4V @ 25µA | 52nC @ 10V | ±25V | 1680pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |