Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 844/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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ON Semiconductor |
MOSFET N-CH 600V DPAK |
7.614 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 2.2A (Tc) | 10V | 4.8Ohm @ 1A, 10V | 4.5V @ 50µA | 16nC @ 10V | ±30V | 325pF @ 25V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 500V 2.6A DPAK |
8.910 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.6A (Tc) | 10V | 3.3Ohm @ 1.15A, 10V | 4.5V @ 50µA | 16nC @ 10V | ±30V | 329pF @ 25V | - | 58W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 600V DPAK |
2.160 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 2.6A (Tc) | 10V | 3.6Ohm @ 1.2A, 10V | 4.5V @ 50µA | 12nC @ 10V | ±30V | 312pF @ 25V | - | 61W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 500V 3A DPAK |
5.868 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 3A (Tc) | 10V | 2.7Ohm @ 1.5A, 10V | 4.5V @ 50µA | 12nC @ 10V | ±30V | 308pF @ 25V | - | 61W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 500V 5A DPAK |
7.164 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 4.7A (Tc) | 10V | 1.5Ohm @ 2.2A, 10V | 4.5V @ 50µA | 18.5nC @ 10V | ±30V | 530pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 100V 72A D2PAK |
5.274 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 77A (Tc) | 10V | 14mOhm @ 72A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 3700pF @ 25V | - | 217W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 100V 58A D2PAK |
2.034 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 58A (Tc) | 10V | 18.2mOhm @ 58A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 3500pF @ 25V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 30V 11.1A DPAK |
2.556 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.9A (Ta), 55A (Tc) | 4.5V, 10V | 8mOhm @ 30A, 10V | 2.5V @ 250µA | 22nC @ 10V | ±20V | 1300pF @ 15V | - | 1.07W (Ta), 35.71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 8.1A DPAK |
4.212 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.1A (Ta), 44A (Tc) | 4.5V, 10V | 9.6mOhm @ 30A, 10V | 2.5V @ 250µA | 16.2nC @ 10V | ±20V | 1035pF @ 12V | - | 1.1W (Ta), 35.7W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 60V 43A DPAK |
7.776 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 43A (Tc) | 10V | 18mOhm @ 20A, 10V | 4V @ 250µA | 23nC @ 10V | ±20V | 1261pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 100V 23A DPAK |
6.786 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 23A (Tc) | 10V | 55mOhm @ 23A, 10V | 4V @ 250µA | 29nC @ 10V | ±20V | 700pF @ 25V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V SO-8FL |
3.726 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 13.2A (Ta), 117A (Tc) | 4.5V, 10V | 3mOhm @ 30A, 10V | 2.5V @ 1mA | 49.5nC @ 10V | ±20V | 3233pF @ 12V | - | 930mW (Ta), 73.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V 5A 8WDFN |
4.896 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 5A (Ta), 32A (Tc) | 4.5V, 11.5V | 20mOhm @ 20A, 10V | 3V @ 250µA | 16.6nC @ 10V | ±20V | 964pF @ 15V | - | 860mW (Ta), 33.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 30V 4.6A 8WDFN |
4.212 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 4.6A (Ta), 26A (Tc) | 4.5V, 11.5V | 24mOhm @ 20A, 10V | 3V @ 250µA | 10.8nC @ 10V | ±20V | 580pF @ 15V | - | 840mW (Ta), 27.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 40V 53.6A 8DFN |
3.400 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 17A (Ta), 53A (Tc) | 4.5V, 10V | 6.4mOhm @ 20A, 10V | 2.2V @ 250µA | 31nC @ 10V | ±20V | 1570pF @ 25V | - | 2.7W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 30V POWER56 |
6.120 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta) | - | 3mOhm @ 21A, 10V | 3V @ 1mA | 66nC @ 10V | - | 4225pF @ 15V | - | 2.5W (Ta), 65W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET P-CH 12V 0.87A SC89 |
5.400 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 870mA (Ta) | 1.8V, 4.5V | 165mOhm @ 870mA, 4.5V | 450mV @ 250µA (Min) | 6nC @ 4.5V | ±8V | - | - | 170mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-6 | SOT-563, SOT-666 |
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Renesas Electronics America |
MOSFET N-CH 30V 60A LFPAK |
4.068 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Ta) | 4.5V, 10V | 2.1mOhm @ 30A, 10V | 2.5V @ 1mA | 42nC @ 4.5V | ±20V | 6380pF @ 10V | - | 65W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 30V 35A LFPAK |
2.790 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Ta) | 4.5V, 10V | 4.7mOhm @ 17.5A, 10V | 2.5V @ 1mA | 14nC @ 4.5V | ±20V | 2180pF @ 10V | - | 45W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 20V 4.2A 8-SOIC |
5.652 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 2.7V, 4.5V | 85mOhm @ 4A, 4.5V | 700mV @ 250µA | 7.5nC @ 4.5V | ±12V | 310pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 59A D2PAK |
5.814 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 59A (Tc) | 4.5V, 10V | 9.5mOhm @ 21A, 10V | 2.25V @ 25µA | 15nC @ 4.5V | ±20V | 1210pF @ 15V | - | 57W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 30V 4A 6-TSOP |
6.300 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 4.5V, 10V | 85mOhm @ 4A, 10V | 1V @ 250µA | 17nC @ 10V | ±20V | 535pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET P-CH 40V 3.4A 8-SOIC |
4.878 |
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FETKY™ | P-Channel | MOSFET (Metal Oxide) | 40V | 3.4A (Ta) | 4.5V, 10V | 112mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | 1110pF @ 25V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 40V 2.5A 6-TSOP |
7.146 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 2.5A (Ta) | 4.5V, 10V | 198mOhm @ 2.5A, 10V | 3V @ 250µA | 8.5nC @ 10V | ±20V | 680pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 40V 12.7A DIRECTFET |
8.136 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 12.7A (Ta), 55A (Tc) | 4.5V, 10V | 8.3mOhm @ 12.7A, 10V | 2.25V @ 250µA | 29nC @ 4.5V | ±20V | 2560pF @ 20V | - | 2.1W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ ST | DirectFET™ Isometric ST |
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Infineon Technologies |
MOSFET N-CH 40V 19A DIRECTFET |
4.662 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 19A (Ta), 106A (Tc) | 4.5V, 10V | 5mOhm @ 19A, 10V | 2.25V @ 250µA | 44nC @ 4.5V | ±20V | 3765pF @ 20V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET P-CH 12V 16A 8-SOIC |
2.052 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 16A (Ta) | 2.5V, 4.5V | 7mOhm @ 16A, 4.5V | 600mV @ 500µA | 212nC @ 5V | ±12V | 17179pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 20V 12A 8-SOIC |
5.958 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 12A (Ta) | 2.8V, 10V | 9mOhm @ 12A, 10V | 2V @ 250µA | 35nC @ 4.5V | ±12V | 2480pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 11A 8-SOIC |
4.734 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 2.8V, 10V | 12mOhm @ 11A, 10V | 2V @ 250µA | 32nC @ 4.5V | ±12V | 2530pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 12V 11A 8-SOIC |
8.910 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 12V | 11A (Ta) | 2.8V, 4.5V | 15mOhm @ 8.8A, 4.5V | 2V @ 250µA | 19nC @ 4.5V | ±12V | 1590pF @ 6V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |