Transistor - FET, MOSFET - Singolo
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Mostra filtri
Ripristina filtri
Applica filtri
CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 834/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
MOSFET N-CH 100V 72A TO-220AB |
2.340 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 77A (Tc) | 10V | 14mOhm @ 72A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 3700pF @ 25V | - | 217W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
ON Semiconductor |
MOSFET N-CH 100V 42A TO-220AB |
5.958 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 42A (Tc) | 10V | 28mOhm @ 42A, 10V | 4V @ 250µA | 51nC @ 10V | ±20V | 1800pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
ON Semiconductor |
MOSFET N-CH 30V 8.3A 8WDFN |
6.678 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.3A (Ta), 46A (Tc) | 4.5V, 10V | 6.2mOhm @ 20A, 10V | 2.2V @ 250µA | 22.8nC @ 10V | ±20V | 1619pF @ 15V | - | 840mW (Ta), 25.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
|
|
|
ON Semiconductor |
MOSFET N-CH 30V 8A 8WDFN |
5.454 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 8A (Ta), 41A (Tc) | 4.5V, 10V | 7.2mOhm @ 20A, 10V | 2.2V @ 250µA | 20.4nC @ 10V | ±20V | 1386pF @ 15V | - | 840mW (Ta), 22.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
|
|
|
ON Semiconductor |
MOSFET N-CH 30V 8A 8WDFN |
3.186 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 8A (Ta), 41A (Tc) | 4.5V, 10V | 7.2mOhm @ 20A, 10V | 2.2V @ 250µA | 20.4nC @ 10V | ±20V | 1386pF @ 15V | - | 840mW (Ta), 22.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
|
|
|
ON Semiconductor |
MOSFET N-CH 30V 7.1A 8WDFN |
6.318 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 7.1A (Ta), 34A (Tc) | 4.5V, 10V | 9mOhm @ 20A, 10V | 2.2V @ 250µA | 17.3nC @ 10V | ±20V | 1194pF @ 15V | - | 890mW (Ta), 20W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
|
|
|
ON Semiconductor |
MOSFET N-CH 30V 7.1A 8WDFN |
7.632 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 7.1A (Ta), 34A (Tc) | 4.5V, 10V | 9mOhm @ 20A, 10V | 2.2V @ 250µA | 17.3nC @ 10V | ±20V | 1194pF @ 15V | - | 890mW (Ta), 20W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 25V 15A 8VQFN |
8.136 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 15A (Ta), 51A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 2.35V @ 25µA | 14.5nC @ 10V | ±20V | 988pF @ 13V | - | 3.6W (Ta), 26W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 25V 81A DPAK |
8.190 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 81A (Tc) | 4.5V, 10V | 5.7mOhm @ 25A, 10V | 2.35V @ 25µA | 15nC @ 4.5V | ±20V | 1470pF @ 13V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 25V 57A DPAK |
2.538 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 57A (Tc) | 4.5V, 10V | 8.7mOhm @ 21A, 10V | 2.35V @ 25µA | 10nC @ 4.5V | ±20V | 900pF @ 13V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 28A 8VQFN |
5.310 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 28A (Ta), 100A (Tc) | 10V | 2.6mOhm @ 50A, 10V | 4V @ 150µA | 110nC @ 10V | ±20V | 4490pF @ 20V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 150V 10A 8VQFN |
5.202 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 10A (Ta), 56A (Tc) | 10V | 31mOhm @ 34A, 10V | 5V @ 150µA | 50nC @ 10V | ±20V | 2300pF @ 50V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 200V 5.1A 8PQFN |
7.128 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 5.1A (Ta) | 10V | 55mOhm @ 7.5A, 10V | 5V @ 150µA | 54nC @ 10V | ±20V | 2290pF @ 100V | - | 3.6W (Ta), 8.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 25V 40A 8VQFN |
2.070 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 40A (Ta), 100A (Tc) | 4.5V, 10V | 1.4mOhm @ 50A, 10V | 2.35V @ 150µA | 83nC @ 10V | ±20V | 6115pF @ 13V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 25V 15A 8VQFN |
8.208 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 15A (Ta), 51A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 2.35V @ 25µA | 14.5nC @ 10V | ±20V | 988pF @ 13V | - | 3.6W (Ta), 26W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 29A 8VQFN |
5.130 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 29A (Ta), 100A (Tc) | 4.5V, 10V | 2.5mOhm @ 50A, 10V | 2.35V @ 100µA | 55nC @ 10V | ±20V | 3635pF @ 25V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 22A 8VQFN |
8.550 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta), 79A (Tc) | 4.5V, 10V | 4.5mOhm @ 47A, 10V | 2.35V @ 50µA | 41nC @ 10V | ±20V | 2360pF @ 10V | - | 3.6W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 13A 8PQFN |
4.392 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 13A (Ta), 100A (Tc) | 4.5V, 10V | 9mOhm @ 50A, 10V | 2.5V @ 150µA | 94nC @ 10V | ±16V | 5185pF @ 50V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
|
|
|
Diodes Incorporated |
MOSFET N-CH 30V 11.6A 8SOIC |
4.284 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 11.6A (Ta) | 4.5V, 10V | 10mOhm @ 11.6A, 10V | 2V @ 250µA | 27.6nC @ 10V | ±20V | 1289pF @ 15V | - | 1.43W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
IXYS |
MOSFET N-CH 4000V .3A PLUS 220 |
5.400 |
|
- | N-Channel | MOSFET (Metal Oxide) | 4000V | 300mA (Tc) | 10V | 290Ohm @ 500mA, 10V | 4V @ 250µA | 16.3nC @ 10V | ±20V | 435pF @ 25V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PLUS-220SMD | PLUS-220SMD |
|
|
|
Diodes Incorporated |
MOSFET P-CH 60V 2.7A 8SO |
7.290 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 2.7A (Ta) | 4.5V, 10V | 125mOhm @ 2.3A, 10V | 1V @ 250µA | 17.7nC @ 10V | ±20V | 637pF @ 30V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Diodes Incorporated |
MOSFET N-CH 40V 6A 8SO |
4.986 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 6A (Ta) | 4.5V, 10V | 27mOhm @ 7A, 10V | 3V @ 250µA | 12.9nC @ 10V | ±20V | 604pF @ 20V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Nexperia |
MOSFET N-CH 55V 28SOIC |
6.966 |
|
- | N-Channel | MOSFET (Metal Oxide) | 55V | - | - | - | - | - | - | - | - | - | - | Surface Mount | 28-SO | 28-SOIC (0.295", 7.50mm Width) |
|
|
|
ON Semiconductor |
MOSFET N-CH 600V IPAK |
7.758 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 2.2A (Tc) | 10V | 4.8Ohm @ 1A, 10V | 4.5V @ 50µA | 10.1nC @ 10V | ±30V | 274pF @ 25V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
ON Semiconductor |
MOSFET N-CH 600V IPAK |
4.248 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 2.6A (Tc) | 10V | 3.6Ohm @ 1.2A, 10V | 4.5V @ 50µA | 12nC @ 10V | ±30V | 312pF @ 25V | - | 61W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
ON Semiconductor |
MOSFET N-CH 500V TO-220FP |
8.856 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 5.5A (Tc) | 10V | 1.5Ohm @ 2.2A, 10V | 4.5V @ 50µA | 28nC @ 10V | ±30V | 632pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
|
|
|
ON Semiconductor |
MOSFET N-CH 500V 8.5A TO-220FP |
3.454 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 8.5A (Tc) | 10V | 850mOhm @ 3.6A, 10V | 4.5V @ 100µA | 46nC @ 10V | ±30V | 1095pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
|
|
|
ON Semiconductor |
MOSFET N-CH 100V 76A D2PAK |
5.580 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 76A (Tc) | 10V | 13mOhm @ 76A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 4500pF @ 25V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
ON Semiconductor |
MOSFET N-CH 100V 80A D2PAK |
7.758 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 10V | 13mOhm @ 76A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 4500pF @ 25V | - | - | - | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
ON Semiconductor |
MOSFET N-CH 100V 80A D2PAK |
2.178 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 10V | 13mOhm @ 76A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 4500pF @ 25V | - | - | - | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |