Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 832/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXYS |
MOSFET N-CH 900V 18A PLUS220SMD |
2.250 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 900V | 18A (Tc) | 10V | 600mOhm @ 500mA, 10V | 6.5V @ 1mA | 97nC @ 10V | ±30V | 5230pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PLUS-220SMD | PLUS-220SMD |
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Infineon Technologies |
MOSFET N-CH 25V 45A PQFN |
8.316 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 45A (Ta), 100A (Tc) | 4.5V, 10V | 1.15mOhm @ 50A, 10V | 2.35V @ 150µA | 110nC @ 10V | ±20V | 7174pF @ 13V | - | 3.6W (Ta), 160W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 40A PQFN |
4.140 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Ta), 100A (Tc) | 4.5V, 10V | 1.4mOhm @ 50A, 10V | 2.35V @ 150µA | 120nC @ 10V | ±20V | 7200pF @ 15V | - | 3.6W (Ta), 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Nexperia |
MOSFET N-CH 30V 100A LFPAK |
4.140 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | - | 1.7mOhm @ 15A, 10V | 2.15V @ 1mA | 77.9nC @ 10V | - | 5057pF @ 12V | - | - | - | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Nexperia |
MOSFET N-CH 30V 100A LFPAK |
3.708 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | - | 2mOhm @ 15A, 10V | 2.15V @ 1mA | 64nC @ 10V | - | 3980pF @ 12V | - | - | - | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Nexperia |
MOSFET N-CH 30V 100A LFPAK |
2.268 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | - | 2.4mOhm @ 15A, 10V | 2.15V @ 1mA | 57nC @ 10V | - | 3468pF @ 12V | - | - | - | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Nexperia |
MOSFET N-CH 30V 100A LFPAK |
5.274 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | - | 3mOhm @ 15A, 10V | 2.15V @ 1mA | 45.8nC @ 10V | - | 2822pF @ 12V | - | - | - | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Nexperia |
MOSFET N-CH 30V 100A LFPAK |
4.680 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | - | 4mOhm @ 15A, 10V | 2.15V @ 1mA | 36.6nC @ 10V | - | 2090pF @ 12V | - | - | - | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Nexperia |
MOSFET N-CH 30V 91A LFPAK |
3.672 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 91A (Tc) | - | 5mOhm @ 15A, 10V | 2.15V @ 1mA | 29nC @ 10V | - | 1760pF @ 12V | - | - | - | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Nexperia |
MOSFET N-CH 30V 79A LFPAK |
5.310 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 79A (Tc) | - | 6mOhm @ 15A, 10V | 2.15V @ 1mA | 24nC @ 10V | - | 1425pF @ 12V | - | - | - | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Nexperia |
MOSFET N-CH 30V 76A LFPAK |
2.808 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 76A (Tc) | - | 7mOhm @ 15A, 10V | 2.15V @ 1mA | 22nC @ 10V | - | 1270pF @ 12V | - | - | - | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 30V 9A 8DSO |
3.114 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 13mOhm @ 11.1A, 10V | 2V @ 250µA | 17nC @ 10V | ±20V | 1300pF @ 15V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 1.5A SOT-23 |
4.986 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 2.5V, 4.5V | 150mOhm @ 1.5A, 4.5V | 1.2V @ 11µA | 3.6nC @ 4.5V | ±12V | 346pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 30V 1.5A SOT-23 |
3.762 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 1.5A (Ta) | 4.5V, 10V | 150mOhm @ 1.5A, 10V | 2V @ 11µA | 2.3nC @ 5V | ±20V | 282pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 40V 120A TO263-3 |
2.718 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 2mOhm @ 80A, 10V | 4V @ 230µA | 210nC @ 10V | ±20V | 14300pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO263-3 |
6.570 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 6.2mOhm @ 70A, 10V | 4V @ 50µA | 40nC @ 10V | ±20V | 2700pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 50A TO252-3 |
8.658 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 50A (Tc) | 8V, 10V | 20mOhm @ 50A, 10V | 4V @ 90µA | 31nC @ 10V | ±20V | 1820pF @ 75V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 82A TO252-3 |
4.752 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 82A (Tc) | 10V | 6mOhm @ 70A, 10V | 4V @ 50µA | 40nC @ 10V | ±20V | 2700pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4.6A UFM |
5.382 |
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U-MOSV | P-Channel | MOSFET (Metal Oxide) | 20V | 4.6A (Ta) | 1.5V, 4.5V | 46mOhm @ 3A, 4.5V | 1V @ 1mA | 8.1nC @ 4.5V | ±8V | 640pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 5A TSM |
5.130 |
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U-MOSV | P-Channel | MOSFET (Metal Oxide) | 20V | 5A (Ta) | 1.5V, 4.5V | 31mOhm @ 4A, 4.5V | 1V @ 1mA | 19nC @ 4.5V | ±8V | 1170pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 5.2A TSM |
5.346 |
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U-MOSV | P-Channel | MOSFET (Metal Oxide) | 20V | 5.2A (Ta) | 1.5V, 4.5V | 46mOhm @ 3A, 4.5V | 1V @ 1mA | 8.1nC @ 4.5V | ±8V | 640pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 6A TSM |
6.408 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 27.6mOhm @ 4A, 10V | 2.5V @ 1mA | 10.1nC @ 10V | ±20V | 450pF @ 15V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 4A TSM |
7.236 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 1.8V, 10V | 53mOhm @ 3A, 10V | 1V @ 1mA | 4.3nC @ 4V | ±12V | 270pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V .2A USM |
3.186 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 2.1Ohm @ 500mA, 10V | 3.1V @ 250µA | - | ±20V | 17pF @ 25V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | USM | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V .5A CST4 |
5.652 |
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U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 20V | 500mA (Ta) | 1.8V, 4V | 205mOhm @ 250mA, 4V | 1.1V @ 1mA | - | ±12V | 174pF @ 10V | - | 400mW (Ta) | 150°C (TJ) | Surface Mount | CST4 (1.2x0.8) | 4-SMD, No Lead |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 1.9A UFV |
8.424 |
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U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 30V | 1.9A (Ta) | 1.8V, 4V | 133mOhm @ 1A, 4V | 1V @ 1mA | 1.9nC @ 4V | ±12V | 123pF @ 15V | Schottky Diode (Isolated) | 500mW (Ta) | 150°C (TJ) | Surface Mount | UFV | 6-SMD (5 Leads), Flat Lead |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 9.5A UF6 |
3.870 |
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U-MOSV | P-Channel | MOSFET (Metal Oxide) | 20V | 9.5A (Ta) | 1.5V, 4.5V | 22.1mOhm @ 3A, 4.5V | 1V @ 1mA | 15nC @ 4.5V | ±8V | 1100pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | UF6 | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 12V 4A UF6 |
6.156 |
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U-MOSIV | P-Channel | MOSFET (Metal Oxide) | 12V | 4A (Ta) | 1.5V, 2.5V | 54mOhm @ 2A, 2.5V | 1V @ 1mA | - | ±8V | 1700pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | UF6 | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 1.8A ES6 |
5.958 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 1.8A (Ta) | 1.5V, 2.5V | 136mOhm @ 1A, 2.5V | 1V @ 1mA | 10.6nC @ 4V | ±8V | 568pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | ES6 (1.6x1.6) | SOT-563, SOT-666 |
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Infineon Technologies |
MOSFET P-CH 30V 12.5A TDSON-8 |
3.888 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 9.9A (Ta), 12.5A (Tc) | 10V | 20mOhm @ 12.5A, 10V | 2.2V @ 100µA | 48.5nC @ 10V | ±25V | 2430pF @ 15V | - | 2.5W (Ta), 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |