Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 833/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 20V 1.5A SOT-363 |
3.114 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 2.5V, 4.5V | 140mOhm @ 1.5A, 4.5V | 1.2V @ 3.7µA | 0.8nC @ 5V | ±12V | 143pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT363-6 | 6-VSSOP, SC-88, SOT-363 |
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Infineon Technologies |
MOSFET N-CH 30V 7.1A TSOP-6 |
5.292 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 7.1A (Ta) | 4.5V, 10V | 25mOhm @ 7.1A, 10V | 2V @ 30µA | 6.6nC @ 5V | ±20V | 750pF @ 15V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP-6-6 | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 20V 7.5A TSOP6 |
7.884 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 7.5A (Ta) | 1.8V, 2.5V | 22mOhm @ 7.5A, 2.5V | 750mV @ 30µA | 4.7nC @ 2.5V | ±8V | 1347pF @ 10V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP-6-6 | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET P-CH 30V 12.6A 8DSO |
6.066 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 12.6A (Ta) | 10V | 8mOhm @ 14.9A, 10V | 2.2V @ 250µA | 136nC @ 10V | ±25V | 5890pF @ 25V | - | 1.79W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 7A 8DSO |
8.478 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 22mOhm @ 8.6A, 10V | 2.1V @ 250µA | 10.4nC @ 10V | ±20V | 800pF @ 15V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 20V 2.5A SOT-23 |
3.240 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 2.5V, 4.5V | 50mOhm @ 2.5A, 4.5V | 1.2V @ 11µA | 3.2nC @ 4.5V | ±12V | 419pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 30V 90A TO252-3 |
7.344 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 3.1mOhm @ 30A, 10V | 2.2V @ 250µA | 51nC @ 10V | ±20V | 5300pF @ 15V | - | - | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 10.6A TO252 |
8.532 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 3.5V @ 320µA | 32nC @ 10V | ±20V | 700pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 7.3A TO252 |
7.038 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5nC @ 10V | ±20V | 440pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 4.4A TO252 |
8.244 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4.4A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 130µA | 13nC @ 10V | ±20V | 280pF @ 100V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 7.3A TO220 |
6.606 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5nC @ 10V | ±20V | 440pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 4.4A TO220 |
5.778 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4.4A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 130µA | 13nC @ 10V | ±20V | 280pF @ 100V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 600V 4A IPAK |
4.572 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4.1A (Tc) | 10V | 2Ohm @ 2A, 10V | 4.5V @ 50µA | 29nC @ 10V | ±30V | 640pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 500V 5A IPAK |
8.082 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 4.7A (Tc) | 10V | 1.5Ohm @ 2.2A, 10V | 4.5V @ 50µA | 18.5nC @ 10V | ±30V | 530pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 100V 72A D2PAK |
2.988 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 77A (Tc) | 10V | 14mOhm @ 72A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 3700pF @ 25V | - | 217W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 100V 58A D2PAK |
8.226 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 58A (Tc) | 10V | 18.2mOhm @ 58A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 3500pF @ 25V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 100V 42A D2PAK |
7.020 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 42A (Tc) | 10V | 28mOhm @ 42A, 10V | 4V @ 250µA | 51nC @ 10V | ±20V | 1800pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 25V 65A IPAK |
3.924 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 10.4A (Ta), 65A (Tc) | - | 7.5mOhm @ 30A, 10V | 2.5V @ 250µA | 21.8nC @ 10V | - | 1308pF @ 12V | - | 1.28W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 25V 65A IPAK TRIMMED |
2.934 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 10.4A (Ta), 65A (Tc) | - | 7.5mOhm @ 30A, 10V | 2.5V @ 250µA | 21.8nC @ 10V | - | 1308pF @ 12V | - | 1.28W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 30V 37A IPAK TRIMMED |
3.762 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.2A (Ta), 37A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.2V @ 250µA | 15.4nC @ 10V | ±20V | 1203pF @ 15V | - | 1.37W (Ta), 27.3W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 30V 37A DPAK |
8.640 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.2A (Ta), 37A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.2V @ 250µA | 15.4nC @ 10V | ±20V | 1203pF @ 15V | - | 1.37W (Ta), 27.3W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 32A IPAK |
2.466 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 7.7A (Ta), 32A (Tc) | 4.5V, 10V | 10.5mOhm @ 30A, 10V | 2.2V @ 250µA | 13nC @ 10V | ±20V | 1013pF @ 15V | - | 1.36W (Ta), 24W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 30V 32A IPAK TRIMMED |
3.330 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 7.7A (Ta), 32A (Tc) | 4.5V, 10V | 10.5mOhm @ 30A, 10V | 2.2V @ 250µA | 13nC @ 10V | ±20V | 1013pF @ 15V | - | 1.36W (Ta), 24W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 30V 32A DPAK |
4.986 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 7.7A (Ta), 32A (Tc) | 4.5V, 10V | 10.5mOhm @ 30A, 10V | 2.2V @ 250µA | 13nC @ 10V | ±20V | 1013pF @ 15V | - | 1.36W (Ta), 24W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 100V 32A IPAK |
8.748 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 32A (Tc) | 10V | 37mOhm @ 32A, 10V | 4V @ 250µA | 40nC @ 10V | ±20V | 1450pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 100V 23A IPAK |
4.914 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 23A (Tc) | 10V | 55mOhm @ 23A, 10V | 4V @ 250µA | 29nC @ 10V | ±20V | 700pF @ 25V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 100V 17A IPAK |
7.254 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 10V | 81mOhm @ 17A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 620pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 100V 19A IPAK |
4.752 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 19A (Tc) | 4.5V, 10V | 74mOhm @ 19A, 10V | 2.2V @ 250µA | 40nC @ 10V | ±20V | 1000pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 30V 8.8A SO8FL |
3.834 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.8A (Ta), 58.5A (Tc) | 4.5V, 11.5V | 6.95mOhm @ 30A, 10V | 2.5V @ 250µA | 25nC @ 11.5V | ±20V | 1400pF @ 12V | - | 870mW (Ta), 38.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V 4.5A 8SOIC |
7.110 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 4.5A (Ta) | 4.5V, 10V | 24mOhm @ 6.9A, 10V | 3V @ 250µA | 9.5nC @ 10V | ±20V | 520pF @ 15V | - | 680mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |