Transistor - FET, MOSFET - Singolo
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Mostra filtri
Ripristina filtri
Applica filtri
CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 49/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Toshiba Semiconductor and Storage |
LOAD SWITCH CURRENT REDUCTION |
21.858 |
|
U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 400mA (Ta) | 4.5V, 10V | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | ±20V | 40pF @ 10V | - | 150mW (Ta) | 150°C | Surface Mount | USM | SC-70, SOT-323 |
|
|
|
ON Semiconductor |
MOSFET N-CH 60V 260MA SOT-23 |
2.350.362 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 260mA (Ta) | 4.5V, 10V | 2.5Ohm @ 240mA, 10V | 2.5V @ 250µA | 0.81nC @ 5V | ±20V | 26.7pF @ 25V | - | 300mW (Tj) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
|
|
|
ON Semiconductor |
MOSFET N-CH 60V 320MA SOT-23 |
602.160 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 320mA (Ta) | 4.5V, 10V | 1.6Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.7nC @ 4.5V | ±20V | 24.5pF @ 20V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Nexperia |
MOSFET 2N-CH 60V TO-236AB |
288.960 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 270mA (Ta) | 5V, 10V | 2.8Ohm @ 200mA, 10V | 2.1V @ 250µA | 1nC @ 10V | ±20V | 23.6pF @ 10V | - | 310mW (Ta), 1.67W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 0.1A VESM |
141.240 |
|
π-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 12Ohm @ 10mA, 4V | 1.7V @ 100µA | - | ±20V | 9.1pF @ 3V | - | 150mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | VESM | SOT-723 |
|
|
|
Rohm Semiconductor |
1.2V DRIVE NCH MOSFET |
29.466 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 1.2V, 4.5V | - | 1V @ 1mA | - | ±8V | 25pF @ 10V | - | 350mW (Ta) | 150°C (TJ) | Surface Mount | SST3 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 50V 0.2A UMT3F |
349.686 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 0.9V, 4.5V | 2.2Ohm @ 200mA, 4.5V | 800mV @ 1mA | - | ±8V | 26pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | UMT3F | SC-85 |
|
|
|
Nexperia |
MOSFET N-CHANNEL 60V 210MA SC70 |
46.488 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 210mA (Ta) | 2.5V, 10V | 3.5Ohm @ 200mA, 10V | 1.5V @ 250µA | 0.7nC @ 10V | ±20V | 20pF @ 30V | - | 266mW (Ta), 1.33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70 | SC-70, SOT-323 |
|
|
|
Diodes Incorporated |
MOSFET N-CH 60V SOT23 |
25.134 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 310mA (Ta) | 5V, 10V | 3Ohm @ 115mA, 10V | 2V @ 250µA | 0.87nC @ 10V | ±20V | 22pF @ 25V | - | 370mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Nexperia |
MOSFET N-CH 30V 200MA TO-236AB |
281.262 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 200mA (Ta) | 2.5V, 10V | 4.5Ohm @ 100mA, 10V | 1.5V @ 250µA | 0.44nC @ 4.5V | ±20V | 13pF @ 10V | - | 300mW (Ta), 1.06W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
|
|
|
ON Semiconductor |
MOSFET N-CH 30V 500MA SOT-23 |
1.124.922 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 500mA (Ta) | 2.5V, 4V | 1.5Ohm @ 10mA, 4V | 1.4V @ 250µA | 1.15nC @ 5V | ±20V | 21pF @ 5V | - | 690mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Diodes Incorporated |
MOSFET N-CH 50V 310MA SOT23 |
536.496 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 310mA (Ta) | 10V | 3.5Ohm @ 220mA, 10V | 1.5V @ 250µA | 0.95nC @ 10V | ±20V | 23.2pF @ 25V | - | 380mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Nexperia |
MOSFET N-CH 30V 180MA SOT323 |
2.245.260 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 180mA (Ta) | 2.5V, 10V | 4.5Ohm @ 100mA, 10V | 1.5V @ 250µA | 0.44nC @ 4.5V | ±20V | 13pF @ 10V | - | 260mW (Ta), 1.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70 | SC-70, SOT-323 |
|
|
|
Diodes Incorporated |
MOSFET N-CH 30V 0.38A SOT323 |
357.108 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 380mA (Ta) | 2.5V, 10V | 2.8Ohm @ 250mA, 10V | 1.5V @ 250µA | 0.9nC @ 10V | ±20V | 23.2pF @ 25V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 0.1A SSM |
134.478 |
|
U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 3.6Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 13.5pF @ 3V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | USM | SC-70, SOT-323 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.18A |
87.708 |
|
U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 20V | 250mA (Ta) | 1.2V, 4.5V | 1.1Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | ±10V | 36pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | CST3C | SC-101, SOT-883 |
|
|
|
Diodes Incorporated |
MOSFET N-CH 30V 0.35A SOT23 |
88.848 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 350mA (Ta) | 2.5V, 10V | 2.8Ohm @ 250mA, 10V | 1.5V @ 250µA | 0.9nC @ 10V | ±20V | 23.2pF @ 25V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
ON Semiconductor |
MOSFET N-CH 60V 310MA SOT323 |
2.155.212 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 310mA (Ta) | 4.5V, 10V | 1.6Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.7nC @ 4.5V | ±20V | 24.5pF @ 20V | - | 280mW (Tj) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 (SOT323) | SC-70, SOT-323 |
|
|
|
Diodes Incorporated |
MOSFET N-CH 60V 260MA 3DFN |
342.042 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 260mA (Ta) | 5V, 10V | 3Ohm @ 115mA, 10V | 2V @ 250µA | - | ±20V | 25pF @ 25V | - | 430mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | X1-DFN1006-3 | 3-UFDFN |
|
|
|
ON Semiconductor |
MOSFET N-CH 60V 0.115A SOT-23 |
682.938 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 115mA (Ta) | 5V, 10V | 7.5Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±20V | 50pF @ 25V | - | 200mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Micro Commercial Co |
P-CHANNELMOSFETSOT-23 |
261.786 |
|
- | P-Channel | MOSFET (Metal Oxide) | 50V | 130mA | 5V, 10V | 8Ohm @ 100mA, 10V | 2V @ 250µA | - | ±20V | 30pF @ 25V | - | 225mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Rohm Semiconductor |
MOSFET P-CH 20V 0.1A EMT3 |
129.414 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.2V, 4.5V | 3.8Ohm @ 100mA, 4.5V | 1V @ 100µA | - | ±10V | 15pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | EMT3F (SOT-416FL) | SC-89, SOT-490 |
|
|
|
Rohm Semiconductor |
MOSFET P-CH 20V 0.2A UMT3F |
58.614 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 1.2V, 4.5V | 1.2Ohm @ 200mA, 4.5V | 1V @ 100µA | 1.4nC @ 4.5V | ±10V | 115pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | UMT3F | SC-85 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 0.1A U-MOS III |
569.142 |
|
U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 3.6Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 13.5pF @ 3V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | VESM | SOT-723 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.25A VESM |
73.968 |
|
U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 20V | 250mA (Ta) | 1.5V, 4.5V | 2.2Ohm @ 100mA, 4.5V | 1V @ 1mA | - | ±10V | 12pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | VESM | SOT-723 |
|
|
|
Infineon Technologies |
MOSFET P-CH 60V 170MA SOT-23 |
317.016 |
|
SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 170mA (Ta) | 4.5V, 10V | 8Ohm @ 170mA, 10V | 2V @ 20µA | 1.5nC @ 10V | ±20V | 19pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 0.25A CST3C |
105.312 |
|
U-MOSVII | P-Channel | MOSFET (Metal Oxide) | 20V | 250mA (Ta) | 1.2V, 4.5V | 1.4Ohm @ 150mA, 4.5V | 1V @ 100µA | - | ±10V | 42pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | CST3C | SOT-1123 |
|
|
|
Nexperia |
MOSFET N-CH 30V SOT323 |
258.576 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 350mA (Ta) | 1.8V, 4.5V | 1.4Ohm @ 350mA, 4.5V | 1.1V @ 250µA | 0.68nC @ 4.5V | ±8V | 50pF @ 15V | - | 260mW (Ta), 830mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70 | SC-70, SOT-323 |
|
|
|
Diodes Incorporated |
MOSFET N-CH 60V 0.17A SOT23-3 |
49.008 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 170mA (Ta) | 5V | 7.5Ohm @ 50mA, 5V | 3V @ 250µA | 0.35nC @ 4.5V | ±20V | 26pF @ 25V | - | 370mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Nexperia |
MOSFET P-CH 50V SOT883 |
86.076 |
|
Automotive, AEC-Q101, TrenchMOS™ | P-Channel | MOSFET (Metal Oxide) | 50V | 230mA (Ta) | 10V | 7.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35nC @ 5V | ±20V | 36pF @ 25V | - | 340mW (Ta), 2.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006-3 | SC-101, SOT-883 |