Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 47/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXYS |
MOSFET N-CH 75V 500A |
22.440 |
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GigaMOS™, TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 75V | 500A (Tc) | 10V | 1.6mOhm @ 100A, 10V | 5V @ 8mA | 545nC @ 10V | ±20V | 41000pF @ 25V | - | 830W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 24-SMPD | 24-PowerSMD, 21 Leads |
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IXYS |
MOSFET N-CH 500V 48A PLUS247 |
6.564 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 48A (Tc) | 10V | 100mOhm @ 24A, 10V | 4V @ 4mA | 190nC @ 10V | ±20V | 7000pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 650V 120A PLUS247 |
18.300 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 650V | 120A (Tc) | 10V | 24mOhm @ 60A, 10V | 5.5V @ 8mA | 225nC @ 10V | ±30V | 15500pF @ 25V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 200V 230A PLUS247 |
18.504 |
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GigaMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 230A (Tc) | 10V | 7.5mOhm @ 60A, 10V | 5V @ 8mA | 378nC @ 10V | ±20V | 28000pF @ 25V | - | 1670W (Tc) | - | Through Hole | PLUS247™-3 | TO-247-3 |
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Rohm Semiconductor |
MOSFET NCH 1.2KV 31A TO247N |
21.300 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 31A (Tc) | 18V | 104mOhm @ 10A, 18V | 5.6V @ 5mA | 60nC @ 18V | +22V, -4V | 785pF @ 800V | - | 165W (Tc) | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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IXYS |
MOSFET N-CH 200V 230A TO-264 |
8.892 |
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GigaMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 230A (Tc) | 10V | 7.5mOhm @ 60A, 10V | 5V @ 8mA | 378nC @ 10V | ±20V | 28000pF @ 25V | - | 1670W (Tc) | - | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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Transphorm |
GANFET N-CH 650V 46.5A TO247-3 |
17.016 |
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- | N-Channel | GaNFET (Gallium Nitride) | 650V | 46.5A (Tc) | 12V | 41mOhm @ 30A, 10V | 4.8V @ 1mA | 36nC @ 10V | ±20V | 1500pF @ 400V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 100V 360A SOT-227B |
1.567 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 360A (Tc) | 10V | 2.6mOhm @ 180A, 10V | 4.5V @ 250µA | 505nC @ 10V | ±20V | 36000pF @ 25V | - | 830W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 150V 360A TO264 |
10.464 |
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GigaMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 360A (Tc) | 10V | 4mOhm @ 60A, 10V | 5V @ 8mA | 715nC @ 10V | ±20V | 47500pF @ 25V | - | 1670W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 600V 60A TO-247 |
7.776 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 60A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.9V @ 3mA | 190nC @ 10V | ±30V | 7200pF @ 25V | - | 431W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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IXYS |
MOSFET N-CH 800V 60A PLUS264 |
7.956 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 800V | 60A (Tc) | 10V | 140mOhm @ 30A, 10V | 5V @ 8mA | 250nC @ 10V | ±30V | 18000pF @ 25V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS264™ | TO-264-3, TO-264AA |
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Transphorm |
GANFET N-CH 650V 35A TO247 |
12.948 |
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Automotive, AEC-Q101 | N-Channel | GaNFET (Gallium Nitride) | 650V | 35A (Tc) | 10V | 62mOhm @ 22A, 8V | 2.6V @ 700µA | 42nC @ 8V | ±18V | 2200pF @ 400V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 300V 130A SOT227 |
6.576 |
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GigaMOS™ | N-Channel | MOSFET (Metal Oxide) | 300V | 130A (Tc) | 10V | 19mOhm @ 60A, 10V | 5V @ 8mA | 335nC @ 10V | ±20V | 28000pF @ 25V | - | 900W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 4500V 0.2A TO268 |
19.608 |
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- | N-Channel | MOSFET (Metal Oxide) | 4500V | 200mA (Tc) | 10V | 750Ohm @ 10mA, 10V | 6.5V @ 250µA | 10.4nC @ 10V | ±20V | 256pF @ 25V | - | 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 250V 240A PLUS247-3 |
13.074 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 240A (Tc) | 10V | 5mOhm @ 120A, 10V | 4.5V @ 8mA | 345nC @ 10V | ±20V | 23800pF @ 25V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
200V/300A ULTRA JUNCTION X3-CLAS |
11.124 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 300A (Tc) | 10V | 4mOhm @ 150A, 10V | 4.5V @ 8mA | 375nC @ 10V | ±20V | 23800pF @ 25V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
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Rohm Semiconductor |
MOSFET N-CH 1200V 40A TO-247 |
32.502 |
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- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 40A (Tc) | 18V | 117mOhm @ 10A, 18V | 4V @ 4.4mA | 106nC @ 18V | +22V, -6V | 2080pF @ 800V | - | 262W (Tc) | 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Vishay Semiconductor Diodes Division |
POWER MODULE 100V 435A SOT-227 |
6.912 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 435A (Tc) | 10V | 2.15mOhm @ 200A, 10V | 3.8V @ 750µA | 375nC @ 10V | ±20V | 17300pF @ 25V | - | 652W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 75V 480A SOT227 |
6.396 |
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GigaMOS™, HiPerFET™, TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 75V | 480A (Tc) | 10V | 1.9mOhm @ 100A, 10V | 5V @ 8mA | 545nC @ 10V | ±20V | 41000pF @ 25V | - | 940W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 500V 48A SOT-227B |
12.852 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 48A (Tc) | 10V | 100mOhm @ 500mA, 10V | 4V @ 8mA | 270nC @ 10V | ±20V | 8400pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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Cree/Wolfspeed |
MOSFET 1200V, 75 MOHM, G3 SIC |
8.484 |
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C3M™ | N-Channel | SiCFET (Silicon Carbide) | 1200V | 30A (Tc) | 15V | 90mOhm @ 20A, 15V | 4V @ 5mA | 54nC @ 15V | +19V, -8V | 1350pF @ 1000V | - | 113.6W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 200V 106A SOT-227B |
6.792 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 106A (Tc) | 10V | 20mOhm @ 500mA, 10V | 4V @ 8mA | 380nC @ 10V | ±20V | 9000pF @ 25V | - | 521W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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Rohm Semiconductor |
MOSFET NCH 650V 70A TO247N |
20.568 |
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- | N-Channel | SiCFET (Silicon Carbide) | 650V | 70A (Tc) | 18V | 39mOhm @ 27A, 18V | 5.6V @ 13.3mA | 104nC @ 18V | +22V, -4V | 1526pF @ 500V | - | 262W (Tc) | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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IXYS |
MOSFET P-CH 100V 170A SOT227 |
7.896 |
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PolarP™ | P-Channel | MOSFET (Metal Oxide) | 100V | 170A (Tc) | 10V | 12mOhm @ 500mA, 10V | 4V @ 1mA | 240nC @ 10V | ±20V | 12600pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 70V 200A SOT-227B |
7.200 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 70V | 200A (Tc) | 10V | 6mOhm @ 500mA, 10V | 4V @ 8mA | 480nC @ 10V | ±20V | 9000pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 200V 220A SOT-227 |
7.032 |
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GigaMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 220A (Tc) | 10V | 7.5mOhm @ 60A, 10V | 5V @ 8mA | 378nC @ 10V | ±20V | 28000pF @ 25V | - | 1090W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 800V 53A SOT-227B |
87 |
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PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 800V | 53A (Tc) | 10V | 140mOhm @ 30A, 10V | 5V @ 8mA | 250nC @ 10V | ±30V | 18000pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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Cree/Wolfspeed |
ZFET 900V, 30 MOHM, G3 SIC MOSFE |
7.584 |
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C3M™ | N-Channel | SiCFET (Silicon Carbide) | 900V | 63A (Tc) | 15V | 39mOhm @ 35A, 15V | 3.5V @ 11mA | 87nC @ 15V | +15V, -4V | 1864pF @ 600V | - | 149W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
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Rohm Semiconductor |
MOSFET NCH 1.2KV 55A TO247N |
18.210 |
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- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 55A (Tc) | 18V | 52mOhm @ 20A, 18V | 5.6V @ 10mA | 107nC @ 18V | +22V, -4V | 1337pF @ 800V | - | 262W (Tc) | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Cree/Wolfspeed |
MOSFET N-CH 1200V 60A TO-247 |
37.512 |
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Z-FET™ | N-Channel | SiCFET (Silicon Carbide) | 1200V | 60A (Tc) | 20V | 52mOhm @ 40A, 20V | 2.8V @ 10mA | 115nC @ 20V | +25V, -10V | 1893pF @ 1000V | - | 330W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |