Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 38/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 100V 120A D2PAK |
21.576 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 6mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | ±20V | 6860pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 60V 287A 5DFN |
12.588 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 287A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 2V @ 250µA | 52nC @ 4.5V | ±20V | 8900pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 100V 14.5A 8-PQFN |
141.540 |
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Dual Cool™, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 14.5A (Ta), 60A (Tc) | 6V, 10V | 7.5mOhm @ 14.5A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 3135pF @ 50V | - | 3.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Dual Cool™56 | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 600V TO-220FP |
27.024 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 7.5A (Tc) | 10V | 600mOhm @ 4A, 10V | 4V @ 250µA | 13.5nC @ 10V | ±25V | 400pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET P-CH 60V 100A ATPAK |
57.840 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 100A (Ta) | 4.5V, 10V | 6.5mOhm @ 50A, 10V | - | 250nC @ 10V | ±20V | 13000pF @ 20V | - | 90W (Tc) | 150°C (TJ) | Surface Mount | ATPAK | ATPAK (2 leads+tab) |
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Nexperia |
MOSFET N-CH 40V 120A D2PAK |
96.132 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 1.3mOhm @ 25A, 10V | 4V @ 1mA | 136nC @ 10V | ±20V | 9710pF @ 20V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 80V 160A TO263-7 |
14.670 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 160A (Tc) | 6V, 10V | 3mOhm @ 100A, 10V | 3.5V @ 155µA | 117nC @ 10V | ±20V | 8110pF @ 40V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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ON Semiconductor |
MOSFET N-CH 1500V 100MA TO220 |
29.310 |
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- | N-Channel | MOSFET (Metal Oxide) | 1500V | 100mA (Ta) | 10V | 150Ohm @ 50mA, 10V | - | 4.2nC @ 10V | ±30V | 80pF @ 30V | - | 2W (Ta), 20W (Tc) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 500V 7.2A TO-220FP |
14.982 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 500V | 7.2A (Tc) | 10V | 850mOhm @ 3.6A, 10V | 4.5V @ 100µA | 32nC @ 10V | ±30V | 910pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Nexperia |
MOSFET N-CH 100V D2PAK |
16.410 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tj) | 10V | 4.8mOhm @ 25A, 10V | 4V @ 1mA | 278nC @ 10V | ±20V | 14400pF @ 50V | - | 405W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 60V 80A TO-263 |
14.400 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 23mOhm @ 64A, 10V | 4V @ 5.5mA | 173nC @ 10V | ±20V | 5033pF @ 25V | - | 340W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 180A TO263-7 |
20.184 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 180A (Tc) | 4.5V, 10V | 0.95mOhm @ 100A, 10V | 2.2V @ 250µA | 227nC @ 10V | ±20V | 25000pF @ 15V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 150V 83A D2PAK |
15.834 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 85A (Tc) | 10V | 15mOhm @ 33A, 10V | 5V @ 250µA | 110nC @ 10V | ±30V | 4460pF @ 25V | - | 350W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 500V 15A TO-263AB |
23.064 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 15A (Tc) | 10V | 380mOhm @ 7.5A, 10V | 4V @ 250µA | 41nC @ 10V | ±30V | 1850pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 73A TO-220AB |
37.674 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 73A (Tc) | 10V | 14mOhm @ 44A, 10V | 4V @ 100µA | 140nC @ 10V | ±20V | 3550pF @ 50V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 60V 23A 8VSON |
23.574 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Ta) | 4.5V, 10V | 3.2mOhm @ 25A, 10V | 2.2V @ 250µA | 58nC @ 10V | ±20V | 5070pF @ 30V | - | 3.2W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 150V 195A D2PAK |
21.102 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 195A (Tc) | 10V | 12.1mOhm @ 62A, 10V | 5V @ 250µA | 120nC @ 10V | ±20V | 5270pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 500V 20A D2PAK |
28.182 |
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FRFET®, UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 260mOhm @ 10A, 10V | 5V @ 250µA | 65nC @ 10V | ±30V | 3390pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 800V 4.3A TO-220 |
54.720 |
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PowerMESH™ | N-Channel | MOSFET (Metal Oxide) | 800V | 4.3A (Tc) | 10V | 2.4Ohm @ 2.15A, 10V | 4.5V @ 100µA | 45.5nC @ 10V | ±30V | 910pF @ 25V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET P-CH 20V 24A TO-220 |
27.162 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 24A (Tc) | 4.5V | 50mOhm @ 12A, 4.5V | 1V @ 250µA | 35nC @ 5V | ±8V | 1590pF @ 10V | - | 60W (Tc) | -65°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 60V 100A F7 TO220AB |
14.964 |
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STripFET™ F7 | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 5.6mOhm @ 50A, 10V | 4V @ 250µA | 30nC @ 10V | ±20V | 1980pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 60V 100A 8VSON |
115.392 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Ta) | 4.5V, 10V | 2.2mOhm @ 28A, 10V | 2.3V @ 250µA | 53nC @ 10V | ±20V | 4230pF @ 30V | - | 3.1W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 100V 80A D2PAK |
124.260 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 12A (Ta), 80A (Tc) | 6V, 10V | 9mOhm @ 80A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 6000pF @ 25V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 180A D2PAK |
16.866 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 4.7mOhm @ 106A, 10V | 4V @ 250µA | 215nC @ 10V | ±20V | 9575pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 28A TO-220AB |
62.298 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 28A (Tc) | 4V, 5V | 77mOhm @ 17A, 5V | 2V @ 250µA | 64nC @ 5V | ±10V | 2200pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 80V 100A SON5X6 |
22.842 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Ta) | 6V, 10V | 4.1mOhm @ 19A, 10V | 3.3V @ 250µA | 62nC @ 10V | ±20V | 4870pF @ 40V | - | 3.1W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 100V 100A VSON |
13.008 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Ta) | 6V, 10V | 4.9mOhm @ 17A, 10V | 3.2V @ 250µA | 62nC @ 10V | ±20V | 4810pF @ 50V | - | 3.1W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 34A TO263-7 |
14.622 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 34A (Ta), 180A (Tc) | 6V, 10V | 1.4mOhm @ 100A, 10V | 2.8V @ 143µA | 106nC @ 10V | ±20V | 7800pF @ 30V | - | 3W (Ta), 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 100V 31A TO220FP |
223.356 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 31A (Tc) | 4V, 10V | 26mOhm @ 16A, 10V | 2V @ 250µA | 140nC @ 5V | ±16V | 3700pF @ 25V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 75V 80A TO-220 |
56.748 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 11mOhm @ 40A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 3700pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |