Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 36/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 80V 23A 8TDSON |
205.344 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 23A (Ta), 100A (Tc) | 6V, 10V | 2.6mOhm @ 50A, 10V | 3.8V @ 115µA | 92nC @ 10V | ±20V | 6800pF @ 40V | - | 2.5W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 100A TO263-3 |
20.316 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 6V, 10V | 4.2mOhm @ 50A, 10V | 3.5V @ 150µA | 117nC @ 10V | ±20V | 8410pF @ 50V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Texas Instruments |
MOSFET N-CH 100V 100A 8SON |
256.044 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Ta) | 6V, 10V | 6.4mOhm @ 16A, 10V | 3.3V @ 250µA | 48nC @ 10V | ±20V | 3870pF @ 50V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 160A TO263-7 |
18.726 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 160A (Tc) | 6V, 10V | 3.9mOhm @ 100A, 10V | 3.5V @ 160µA | 117nC @ 10V | ±20V | 8410pF @ 50V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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STMicroelectronics |
MOSFET N-CH 80V 100A TO220 |
47.076 |
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STripFET™ F6 | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 10V | 9mOhm @ 50A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 5955pF @ 25V | - | 176W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 200V 19A DPAK |
35.754 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 19A (Tc) | 6V, 10V | 90mOhm @ 5A, 10V | 4V @ 250µA | 51nC @ 10V | ±20V | 1800pF @ 25V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
42.594 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 60V | 260A (Tc) | 4.5V, 10V | 1.29mOhm @ 50A, 10V | 2.5V @ 1mA | 91nC @ 10V | ±20V | 8100pF @ 30V | - | 960mW (Ta), 170W (Tc) | 175°C | Surface Mount | 8-DSOP Advance | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 80V 30A PPAK SO-8 |
23.418 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 30A (Tc) | 8V, 10V | 17mOhm @ 10A, 10V | 4.5V @ 250µA | 45nC @ 10V | ±20V | 1825pF @ 40V | - | 5W (Ta), 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH 100V 13A 8PQFN |
33.180 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 13A (Ta), 100A (Tc) | 4.5V, 10V | 9mOhm @ 50A, 10V | 2.5V @ 150µA | 94nC @ 10V | ±16V | 5185pF @ 50V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 650V 19A VSON-4 |
56.532 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 19A (Tc) | 10V | 185mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | ±20V | 1081pF @ 400V | - | 81W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Vishay Siliconix |
MOSFET N-CH 60V 9.6A PPAK SO-8 |
26.694 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 9.6A (Ta) | 10V | 11mOhm @ 12A, 10V | 4V @ 250µA | 57nC @ 10V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH 40V 100A 8-PQFN |
29.298 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 29A (Ta), 100A (Tc) | 4.5V, 10V | 2.4mOhm @ 50A, 10V | 2.5V @ 150µA | 82nC @ 10V | ±16V | 4730pF @ 25V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 55V 110A TO-220AB |
90.528 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 110A (Tc) | 10V | 8mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | ±20V | 3247pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 50A TO252 |
31.944 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 9.3mOhm @ 20A, 10V | 3V @ 250µA | 70nC @ 10V | ±20V | 2650pF @ 25V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 30A TDSON-8 |
211.200 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Ta), 100A (Tc) | 6V, 10V | 1.45mOhm @ 50A, 10V | 2.8V @ 120µA | 89nC @ 10V | ±20V | 6500pF @ 30V | - | 2.5W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-17 | 8-PowerTDFN |
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EPC |
GANFET TRANS 65V 2.7A BUMPED DIE |
521.712 |
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eGaN® | N-Channel | GaNFET (Gallium Nitride) | 65V | 2A (Ta) | 5V | 530mOhm @ 500mA, 5V | 2.5V @ 250µA | - | +6V, -4V | 21pF @ 32.5V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
MOSFET P-CH 100V 38A D2PAK |
15.174 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 38A (Tc) | 10V | 60mOhm @ 38A, 10V | 4V @ 250µA | 230nC @ 10V | ±20V | 2780pF @ 25V | - | 3.1W (Ta), 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 120A D2PAK |
35.382 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4.2mOhm @ 75A, 10V | 4V @ 150µA | 120nC @ 10V | ±20V | 4520pF @ 50V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 400V 5.4A TO-220 |
330.834 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 400V | 5.4A (Tc) | 10V | 1Ohm @ 2.7A, 10V | 4.5V @ 50µA | 26nC @ 10V | ±30V | 535pF @ 25V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 37A 8TDSON |
75.372 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 37A (Ta), 100A (Tc) | 4.5V, 10V | 1.05mOhm @ 50A, 10V | 2V @ 250µA | 87nC @ 10V | ±20V | 6200pF @ 20V | Schottky Diode (Body) | 2.5W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 40V 120A TO263-3 |
81.570 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 4.5V, 10V | 3.1mOhm @ 100A, 10V | 2.2V @ 340µA | 234nC @ 10V | ±16V | 15000pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 55V 42A D2PAK |
246.678 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 20mOhm @ 42A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 3500pF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 100A D2PAK |
20.292 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 100A (Tc) | 10V | 7.8mOhm @ 78A, 10V | 4V @ 250µA | 250nC @ 10V | ±20V | 5600pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 200V 52A D2PAK |
35.508 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 52A (Tc) | 10V | 49mOhm @ 26A, 10V | 5V @ 250µA | 63nC @ 10V | ±30V | 2900pF @ 25V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 250V 2.8A POWER56 |
113.568 |
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UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 2.8A (Ta), 14A (Tc) | 6V, 10V | 122mOhm @ 2.8A, 10V | 4V @ 250µA | 42nC @ 10V | ±20V | 2365pF @ 100V | - | 2.5W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (5x6), Power56 | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 40V 36A 8-PQFN |
24.972 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 36A (Ta), 100A (Tc) | 4.5V, 10V | 1.1mOhm @ 32A, 10V | 3V @ 250µA | 170nC @ 10V | ±20V | 11110pF @ 20V | - | 2.5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET P-CH 40V 30A |
24.984 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 30A (Tc) | 4.5V, 10V | 10mOhm @ 18A, 10V | 2.5V @ 250µA | 150nC @ 10V | ±20V | 5875pF @ 20V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
DIFFERENTIATED MOSFETS |
44.664 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 6V, 10V | 1.45mOhm @ 50A, 10V | 3.3V @ 120µA | 104nC @ 10V | ±20V | 8125pF @ 30V | - | 3W (Ta), 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 60V 80A TO-263AB |
21.534 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 18A (Ta), 80A (Tc) | 6V, 10V | 5mOhm @ 80A, 10V | 4V @ 250µA | 80nC @ 10V | ±20V | 3900pF @ 25V | - | 245W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 34A TO263-3 |
20.436 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 34A (Tc) | 10V | 32mOhm @ 34A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | 2350pF @ 100V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |