Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 37/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STMicroelectronics |
MOSFET N-CH 60V 30A TO-220 |
17.346 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 5V, 10V | 40mOhm @ 15A, 10V | 2.5V @ 250µA | 17nC @ 5V | ±18V | 660pF @ 25V | - | 70W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
-60V7.7MOHMSINGLE |
17.190 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 60V | 15A (Ta), 100A (Tc) | 4.5V, 10V | 7.7mOhm @ 50A, 10V | 2.6V @ 1mA | 160nC @ 10V | ±20V | 7700pF @ 20V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET P-CH 60V 27A TO-220 |
60.582 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 27A (Tc) | 10V | 70mOhm @ 13.5A, 10V | 4V @ 250µA | 43nC @ 10V | ±25V | 1400pF @ 25V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 120V 8MLP |
56.058 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 120V | 13.5A (Ta) | 6V, 10V | 7.2mOhm @ 13.5A, 10V | 4V @ 250µA | 64nC @ 10V | ±20V | 4250pF @ 60V | - | 2.7W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 150V 27A D2PAK |
62.394 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 27A (Tc) | 10V | 150mOhm @ 16A, 10V | 5V @ 250µA | 110nC @ 10V | ±20V | 2210pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET P-CH 500V 2.7A TO-220 |
97.542 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 500V | 2.7A (Tc) | 10V | 4.9Ohm @ 1.35A, 10V | 5V @ 250µA | 23nC @ 10V | ±30V | 660pF @ 25V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Diodes Incorporated |
MOSFET N-CH 60V 1.1A TO92-3 |
44.574 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 1.1A (Ta) | 5V, 10V | 330mOhm @ 3A, 10V | 3V @ 1mA | - | ±20V | 350pF @ 25V | - | 850mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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STMicroelectronics |
MOSFET N-CH 75V 75A D2PAK |
22.752 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 75V | 75A (Tc) | 5V, 10V | 11mOhm @ 37.5A, 10V | 2.5V @ 250µA | 90nC @ 5V | ±15V | 4300pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 30V 47A POWER56 |
151.482 |
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Dual Cool™, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 47A (Ta), 100A (Tc) | 4.5V, 10V | 0.99mOhm @ 36A, 10V | 2.7V @ 250µA | 206nC @ 10V | ±20V | 14765pF @ 15V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Dual Cool™56 | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 100V 26A TO-220 |
14.586 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 100V | 26A (Tc) | 10V | 60mOhm @ 12A, 10V | 4V @ 250µA | 41nC @ 10V | ±20V | 870pF @ 25V | - | 85W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 250V 44A D2PAK |
32.952 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 44A (Tc) | 10V | 69mOhm @ 22A, 10V | 5V @ 250µA | 61nC @ 10V | ±30V | 2870pF @ 25V | - | 307W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 50A TO-220AB |
51.774 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 28mOhm @ 31A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1900pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 200V 11A TO-220AB |
14.928 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 40V 180A TO263-7 |
53.640 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 180A (Tc) | 4.5V, 10V | 2.4mOhm @ 100A, 10V | 2.2V @ 410µA | 286nC @ 10V | ±16V | 18700pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 40V 180A TO263-7-3 |
30.834 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 180A (Tc) | 10V | 1.3mOhm @ 100A, 10V | 4V @ 140µA | 176nC @ 10V | ±20V | 14000pF @ 25V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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ON Semiconductor |
MOSFET N-CH 200V 9.8A TO-220F |
52.188 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 9.8A (Tc) | 5V | 180mOhm @ 4.9A, 5V | 2V @ 250µA | 56nC @ 5V | ±20V | 1705pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 60V 55A TO-220 |
21.924 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 60V | 55A (Tc) | 10V, 5V | 18mOhm @ 27.5A, 10V | 1.7V @ 250µA | 37nC @ 4.5V | ±16V | 1700pF @ 25V | - | 95W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 150V 33A IPAK |
72.432 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 33A (Tc) | 10V | 42mOhm @ 21A, 10V | 5V @ 100µA | 26nC @ 10V | ±20V | 1750pF @ 50V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CH 950V 2A TO220FP |
24.318 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 950V | 2A (Tc) | 10V | 5Ohm @ 1A, 10V | 5V @ 100µA | 10nC @ 10V | 30V | 105pF @ 100V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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IXYS |
MOSFET N-CH 500V 800MA DPAK |
46.530 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 800mA (Tc) | - | 4.6Ohm @ 400mA, 0V | - | 12.7nC @ 5V | ±20V | 312pF @ 25V | Depletion Mode | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 100V 28A TO-220AB |
14.898 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 28A (Tc) | 10V | 77mOhm @ 17A, 10V | 4V @ 250µA | 72nC @ 10V | ±20V | 1700pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 650V 24A D2PAK |
14.724 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 140mOhm @ 12A, 10V | 4V @ 250µA | 41.5nC @ 10V | ±25V | 1790pF @ 100V | - | 190W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 8A TO-220AB |
37.926 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1300pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 287A 5DFN |
28.698 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 287A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 2V @ 250µA | 52nC @ 4.5V | ±20V | 8900pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Texas Instruments |
MOSFET N-CH 25V 100A 8VSON |
52.704 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 100A (Ta) | 4.5V, 10V | 0.59mOhm @ 50A, 10V | 1.9V @ 250µA | 250nC @ 10V | ±20V | 14000pF @ 12V | - | 3.2W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 100V 86A TO220-3 |
61.962 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Ta) | 6V, 10V | 10.5mOhm @ 55A, 10V | 3.4V @ 250µA | 35nC @ 10V | ±20V | 2670pF @ 50V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 650V 10A 8POWERFLAT |
26.142 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 10A (Tc) | 10V | 375mOhm @ 5A, 10V | 5V @ 250µA | 22nC @ 10V | ±25V | 816pF @ 100V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET P-CH 60V 55A D2PAK |
24.084 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 55A (Tc) | 4.5V, 10V | 19mOhm @ 30A, 10V | 3V @ 250µA | 115nC @ 10V | ±20V | 3500pF @ 25V | - | 3.75W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 60V 120A D2PAK |
21.816 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2mOhm @ 25A, 10V | 4V @ 1mA | 137nC @ 10V | ±20V | 9997pF @ 30V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Texas Instruments |
MOSFET N-CH 40V 100A 8VSON |
401.958 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Ta) | 4.5V, 10V | 1.2mOhm @ 32A, 10V | 2.2V @ 250µA | 195nC @ 10V | ±20V | 13900pF @ 20V | - | 3.1W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |