Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 300/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Vishay Siliconix |
MOSFET N-CH 40V D2PAK (TO-263) |
19.884 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 150A (Tc) | 4.5V, 10V | 1.67mOhm @ 30A, 10V | 2.5V @ 250µA | 195nC @ 10V | ±20V | 10930pF @ 20V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 950V 2A TO220 |
8.916 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 950V | 2A (Tc) | 10V | 5Ohm @ 1A, 10V | 5V @ 100µA | 10nC @ 10V | 30V | 105pF @ 100V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
N-CHANNEL 650 V, 1.2 OHM TYP., 4 |
17.112 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 4A (Tc) | 10V | 2.7Ohm @ 2A, 10V | 4V @ 250µA | - | ±30V | 463pF @ 25V | - | 620mW (Ta), 77W (Tc) | -55°C ~ 150°C (TA) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 900V 5.1A 10-220FP |
9.720 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 5.1A (Tc) | 10V | 1.2Ohm @ 2.8A, 10V | 3.5V @ 310µA | 28nC @ 10V | ±20V | 710pF @ 100V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 650V 4A TO-220FP |
10.488 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 650V | 4A (Tc) | 10V | 1.35Ohm @ 2A, 10V | 4V @ 250µA | 9.8nC @ 10V | ±25V | 226pF @ 100V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 55V 110A TO263 |
15.864 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 110A (Tc) | 4.5V, 10V | 6mOhm @ 30A, 10V | 2.5V @ 250µA | 110nC @ 10V | ±20V | 4440pF @ 25V | - | 157W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 650V 5A IPAK |
21.096 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 650V | 5A (Tc) | 10V | 1.15Ohm @ 2.5A, 10V | 4V @ 250µA | 9nC @ 10V | ±25V | 270pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 200V 35.8A TO220AB |
7.176 |
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ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 35.8A (Tc) | 7.5V, 10V | 37.5mOhm @ 12.2A, 10V | 4V @ 250µA | 32nC @ 10V | ±20V | 1172pF @ 100V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 60V 84A TO-220AB |
17.736 |
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DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 60V | 84A (Tc) | 10V | 6.8mOhm @ 38.5A, 10V | 4V @ 250µA | 74.9nC @ 10V | ±20V | 4295pF @ 25V | - | 136W (Tc) | 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N CH 600V 7.4A TO-220F |
19.956 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 7.4A (Tc) | 10V | 600mOhm @ 3.7A, 10V | 3.5V @ 250µA | 26nC @ 10V | ±20V | 1120pF @ 25V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V TO220-3 |
9.924 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 19.3A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43nC @ 10V | ±20V | 950pF @ 100V | Super Junction | 32W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack, Wide Creepage | TO-220-3 Full Pack, Variant |
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STMicroelectronics |
MOSFET N-CH 600V 5.5A TO-220FP |
5.922 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 5.5A (Tc) | 10V | 780mOhm @ 3A, 10V | 4V @ 250µA | 10nC @ 10V | ±25V | 320pF @ 100V | - | 20W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 400V 10A DPAK |
19.140 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 10A (Tc) | 10V | 600mOhm @ 5A, 10V | 5V @ 250µA | 30nC @ 10V | ±30V | 526pF @ 100V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 3.7A TO220 |
17.364 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 3.7A (Tc) | 10V | 1.4Ohm @ 1.85A, 10V | 4V @ 250µA | 4.5nC @ 10V | ±25V | 165pF @ 100V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 60V TO-220 |
15.024 |
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Automotive, AEC-Q101, DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 60V | 110A (Tc) | 10V | 5.8mOhm @ 50A, 10V | 4.5V @ 250µA | 122nC @ 10V | ±20V | 7480pF @ 25V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 620V 2.7A TO-220 |
8.772 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 620V | 2.7A (Tc) | 10V | 2.5Ohm @ 1.4A, 10V | 4.5V @ 50µA | 13nC @ 10V | ±30V | 385pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
N-CHANNEL 60-V (D-S) 175C MOSFET |
13.656 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220AB | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 600V 2.4A TO-220FP |
20.388 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 600V | 2.4A (Tc) | 10V | 3.6Ohm @ 1.2A, 10V | 4.5V @ 50µA | 11.8nC @ 10V | ±30V | 311pF @ 25V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 1050V 1.4A TO-220 |
13.344 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 1050V | 1.4A (Tc) | 10V | 11Ohm @ 600mA, 10V | 4.5V @ 50µA | 13nC @ 10V | ±30V | 180pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO220-3 |
6.156 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 10V | 4mOhm @ 90A, 10V | 4V @ 90µA | 98nC @ 10V | ±20V | 11000pF @ 30V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 800V 4A TO220F |
19.068 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 1.3Ohm @ 2A, 10V | 4.5V @ 400µA | 21nC @ 10V | ±20V | 880pF @ 100V | - | 24W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 500V 2.5A D2PAK |
15.876 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4V @ 250µA | 24nC @ 10V | ±20V | 360pF @ 25V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 75V 80A TO-220 |
7.968 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 11mOhm @ 40A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 3700pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Renesas Electronics America |
MOSFET P-CH 60V 20A TO-220 |
7.866 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 20A (Tc) | 4V, 10V | 48mOhm @ 10A, 10V | - | 38nC @ 10V | ±20V | 1900pF @ 10V | - | 2W (Ta), 25W (Tc) | 150°C (TJ) | Through Hole | TO-220 Isolated Tab | TO-220-3 Isolated Tab |
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Alpha & Omega Semiconductor |
100V N-CHANNEL ALPHASGT TM |
17.460 |
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AlphaSGT™ | N-Channel | MOSFET (Metal Oxide) | 100V | 22.5A (Ta), 41A (Tc) | 4.5V, 10V | 8.2mOhm @ 20A, 10V | 2.5V @ 250µA | 50nC @ 10V | ±20V | 2500pF @ 50V | - | 8.3W (Ta), 27.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
100V N-CHANNEL ALPHASGT TM |
19.200 |
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AlphaSGT™ | N-Channel | MOSFET (Metal Oxide) | 100V | 22.5A (Ta), 80A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | 2.5V @ 250µA | 50nC @ 10V | ±20V | 2500pF @ 50V | - | 8.3W (Ta), 100W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 40V 200A TO-263 |
14.556 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 200A (Tc) | 4.5V, 10V | 1.7mOhm @ 30A, 10V | 2.5V @ 250µA | 291nC @ 10V | ±20V | 11168pF @ 20V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Vishay Siliconix |
MOSFET N-CH 30V D2PAK TO-263 |
16.500 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 120A (Tc) | 10V | 1.35mOhm @ 40A, 10V | 2.5V @ 250µA | 450nC @ 10V | ±20V | 28000pF @ 15V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 600V 12A TO-220 |
20.292 |
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UniFET-II™ | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 650mOhm @ 6A, 10V | 5V @ 250µA | 34nC @ 10V | ±30V | 1676pF @ 25V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 3.7A TO220 |
19.116 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 3.7A (Tc) | 10V | 1.4Ohm @ 1.85A, 10V | 4V @ 250µA | 4.5nC @ 10V | ±25V | 165pF @ 100V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |