Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 298/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 200V 3.3A D2PAK |
21.396 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 3.3A (Tc) | 10V | 1.5Ohm @ 2A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 3W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 24V 60A D2PAK |
13.206 |
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STripFET™ III | N-Channel | MOSFET (Metal Oxide) | 24V | 60A (Tc) | 5V, 10V | 8mOhm @ 30A, 10V | 1.8V @ 250µA | 22nC @ 5V | ±20V | 2050pF @ 15V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO- |
20.988 |
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U-MOSIX | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Ta) | 10V | 1.2Ohm @ 3A, 10V | 4V @ 630µA | 21nC @ 10V | ±30V | 740pF @ 300V | - | 35W (Tc) | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V TO220-3 |
8.760 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 10.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5nC @ 10V | ±20V | 444pF @ 100V | Super Junction | 28W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 500V 5A TO220 |
18.120 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.38Ohm @ 2.5A, 10V | 4.5V @ 250µA | 15nC @ 10V | ±30V | 586pF @ 50V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 620V 2.5A TO220 |
16.884 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 620V | 2.5A (Tc) | 10V | 3Ohm @ 1.25A, 10V | 4.5V @ 50µA | 17nC @ 10V | ±30V | 386pF @ 50V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET COOLMOS 700V TO251-3 |
17.940 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 10A (Tc) | 10V | 450mOhm @ 2.3A, 10V | 3.5V @ 120µA | 13.1nC @ 10V | ±16V | 424pF @ 400V | - | 22.7W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 500V 2.5A D2PAK |
16.392 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4V @ 250µA | 24nC @ 10V | ±20V | 360pF @ 25V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 500V 3A TO-220F |
19.656 |
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UniFET-II™ | N-Channel | MOSFET (Metal Oxide) | 500V | 3A (Tc) | 10V | 2.5Ohm @ 1.5A, 10V | 5V @ 250µA | 9nC @ 10V | ±25V | 280pF @ 25V | - | 27W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 400V 1.8A TO-220 |
17.100 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 400V | 1.8A (Tc) | 10V | 5.8Ohm @ 900mA, 10V | 5V @ 250µA | 5.5nC @ 10V | ±30V | 150pF @ 25V | - | 40W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 30V 15A 8-PWRSOIC |
22.890 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 5.7mOhm @ 7.5A, 10V | 1V @ 250µA | 24nC @ 4.5V | ±16V | 1810pF @ 25V | - | 3W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC-EP | 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
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Vishay Siliconix |
MOSFET N-CH 400V 6A TO-220AB |
22.140 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 6A (Tc) | 10V | 1Ohm @ 3A, 10V | 5V @ 250µA | 18nC @ 10V | ±30V | 311pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N CH 600V 2A TO-220FP |
17.388 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4.5Ohm @ 1A, 10V | 4.5V @ 50µA | 12nC @ 10V | ±30V | 235pF @ 50V | - | 20W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Rohm Semiconductor |
R8002ANJ FRG IS A POWER MOSFET W |
21.336 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 800V | 2A (Tc) | 10V | 4.3Ohm @ 1A, 10V | 5V @ 1mA | 13nC @ 10V | ±30V | 250pF @ 25V | - | 62W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 600V 3.8A TO220F |
14.394 |
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UniFET-II™ | N-Channel | MOSFET (Metal Oxide) | 600V | 3.8A (Tc) | 10V | 2.5Ohm @ 1.9A, 10V | 5V @ 250µA | 10.8nC @ 10V | ±25V | 510pF @ 25V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Vishay Siliconix |
AUTOMOTIVE N-CHANNEL 60 V (D-S) |
20.436 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 4.5V, 10V | 3.9mOhm @ 20A, 10V | 2.5V @ 250µA | 90nC @ 10V | ±20V | 6100pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 200V 5.2A D2PAK |
17.880 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 5.2A (Tc) | 10V | 800mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 3W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 20V 100A TO263 |
18.444 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 100A (Tc) | 4.5V, 10V | 3.5mOhm @ 30A, 10V | 2.5V @ 250µA | 110nC @ 10V | ±20V | 5500pF @ 10V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 600V 4.5A TO-220F |
16.332 |
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UniFET-II™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 2Ohm @ 2.25A, 10V | 5V @ 250µA | 13nC @ 10V | ±25V | 600pF @ 25V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 100V 6A IPAK |
15.900 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 6A (Tc) | 10V | 250mOhm @ 3A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 280pF @ 25V | - | 30W (Tc) | -65°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO- |
6.030 |
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U-MOSIX | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Ta) | 10V | 750mOhm @ 5A, 10V | 4V @ 1mA | 30nC @ 10V | ±30V | 1130pF @ 300V | - | 40W (Tc) | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET P-CHANNEL 80V 50A TO263 |
17.556 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 80V | 50A (Tc) | 4.5V, 10V | 25mOhm @ 12.5A, 10V | 2.5V @ 250µA | 137nC @ 10V | ±20V | 5350pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET P-CH 400V 2A TO-220 |
22.860 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 400V | 2A (Tc) | 10V | 6.5Ohm @ 1A, 10V | 5V @ 250µA | 13nC @ 10V | ±30V | 350pF @ 25V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 650V 5.5A TO-220FP |
7.344 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 5.5A (Tc) | 10V | 820mOhm @ 2.5A, 10V | 4V @ 250µA | 11.5nC @ 10V | ±25V | 325pF @ 100V | - | 20W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 200V 6.3A TO-220F |
19.440 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 6.3A (Tc) | 10V | 400mOhm @ 3.15A, 10V | 4V @ 250µA | 25nC @ 10V | ±25V | 550pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N CH 75V 78A TO-220 |
11.100 |
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DeepGATE™, STripFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 78A (Tc) | 10V | 11mOhm @ 39A, 10V | 4V @ 250µA | 76nC @ 10V | ±20V | 5015pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V TO220-3 |
9.624 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 3.5V @ 320µA | 32nC @ 10V | ±20V | 700pF @ 100V | Super Junction | 31W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 400V 6A TO-220 |
20.436 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 400V | 6A (Tc) | 10V | 1Ohm @ 3A, 10V | 4V @ 250µA | 20nC @ 10V | ±30V | 625pF @ 25V | - | 73W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 110A TO-262 |
19.152 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 110A (Tc) | 10V | 8mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | ±20V | 3247pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 500V 1.8A TO220-3 |
18.168 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 1.8A (Tc) | 10V | 2.5Ohm @ 1.5A, 10V | 4V @ 250µA | 13nC @ 10V | ±30V | 365pF @ 25V | - | 62W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |