Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 299/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO- |
7.800 |
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U-MOSIX | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Ta) | 10V | 650mOhm @ 5.5A, 10V | 4V @ 1.16mA | 34nC @ 10V | ±30V | 1320pF @ 300V | - | 45W (Tc) | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 100V 9.2A D2PAK |
14.832 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 9.2A (Tc) | 10V | 270mOhm @ 5.5A, 10V | 4V @ 250µA | 16nC @ 10V | ±20V | 360pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET P-CH 100V 11.5A TO-220 |
16.356 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 11.5A (Tc) | 10V | 290mOhm @ 5.75A, 10V | 4V @ 250µA | 27nC @ 10V | ±30V | 800pF @ 25V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 6A TO-220 FPAK |
14.544 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 6A (Tc) | 10V | 1Ohm @ 3A, 10V | 5V @ 250µA | 18nC @ 10V | ±30V | 311pF @ 100V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 600V 6.5A TO-220 |
22.788 |
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UniFET-II™ | N-Channel | MOSFET (Metal Oxide) | 600V | 6.5A (Tc) | 10V | 1.25Ohm @ 3.25A, 10V | 5V @ 250µA | 17nC @ 10V | ±30V | 730pF @ 25V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 75V 80A D2PAK |
13.776 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 11mOhm @ 40A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 3700pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 70A TO220-3-1 |
11.052 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 70A (Tc) | 10V | 6.5mOhm @ 70A, 10V | 4V @ 26µA | 32nC @ 10V | ±20V | 2550pF @ 25V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Texas Instruments |
GEN1.4 40V-20V |
16.404 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 274A (Tc) | 4.5V, 10V | 1.7mOhm @ 100A, 10V | 2.3V @ 250µA | 153nC @ 10V | ±20V | 11400pF @ 20V | - | 250W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | DDPAK/TO-263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 400V 5.5A D2PAK |
15.552 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 5.5A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 700pF @ 25V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 83A TO220 |
19.428 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 76A (Tc) | 6V, 10V | 8.4mOhm @ 46A, 10V | 3.7V @ 100µA | 109nC @ 10V | ±20V | 4020pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V TO-220 |
6.168 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 1.2Ohm @ 2.25A, 10V | 4V @ 250µA | 8nC @ 10V | ±25V | 232pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 40V 50A TO-263 |
15.252 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 10V | 4.1mOhm @ 30A, 10V | 3.5V @ 250µA | 105nC @ 10V | ±20V | 6715pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 120V 42A TO-220 |
15.912 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 120V | 42A (Tc) | 10V | 9.4mOhm @ 21A, 10V | 4V @ 1mA | 52nC @ 10V | ±20V | 3100pF @ 60V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 75V 75A D2PAK |
17.256 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 8.8mOhm @ 75A, 10V | 4V @ 250µA | 118nC @ 10V | ±20V | 6595pF @ 25V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 400V 10A TO-220AB |
16.656 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 10A (Tc) | 10V | 600mOhm @ 5A, 10V | 5V @ 250µA | 30nC @ 10V | ±30V | 526pF @ 100V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 600V 4.5A TO-220 |
21.672 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 2.5Ohm @ 2.25A, 10V | 4V @ 250µA | 19nC @ 10V | ±30V | 670pF @ 25V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 800V 3A TO-220F |
9.060 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 4.8Ohm @ 1.5A, 10V | 5V @ 250µA | 16.5nC @ 10V | ±30V | 705pF @ 25V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CHAN 600V TO-220 FP |
19.032 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 240mOhm @ 5.5A, 10V | 5V @ 250µA | 23nC @ 10V | ±30V | 783pF @ 100V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 620V 2.7A TO-220FP |
21.192 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 620V | 2.7A (Tc) | 10V | 2.5Ohm @ 1.4A, 10V | 4.5V @ 50µA | 13nC @ 10V | ±30V | 385pF @ 25V | - | 20W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 13A TO263-3 |
23.904 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 13A (Tc) | 10V | 130mOhm @ 5.3A, 10V | 4V @ 260µA | 24nC @ 10V | ±20V | 1080pF @ 400V | - | 68W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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STMicroelectronics |
MOSFET N-CH 520V 4.4A I2PAK |
20.928 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 520V | 4.4A (Tc) | 10V | 1.5Ohm @ 2.2A, 10V | 4.5V @ 50µA | 16.9nC @ 10V | ±30V | 529pF @ 25V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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STMicroelectronics |
MOSFET N-CH 620V 2.2A TO-220FP |
17.352 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 620V | 2.2A (Tc) | 10V | 3.6Ohm @ 1.1A, 10V | 4.5V @ 50µA | 15nC @ 10V | ±30V | 340pF @ 50V | - | 20W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 650V 4A IPAK |
17.388 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 650V | 4A (Tc) | 10V | 1.35Ohm @ 2A, 10V | 4V @ 250µA | 9.8nC @ 10V | ±25V | 226pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 200V 18A TO-220F-3 |
20.244 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 140mOhm @ 9A, 10V | 5V @ 250µA | 26nC @ 10V | ±30V | 1180pF @ 25V | - | 41W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 250V 2.1A TO220FP |
21.168 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 2.1A (Tc) | 10V | 2Ohm @ 1.3A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 23W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Texas Instruments |
40-V N-CHANNEL NEXFET POWER MOS |
8.796 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 110A (Ta), 194A (Tc) | 4.5V, 10V | 2.6mOhm @ 100A, 10V | 2.4V @ 250µA | 64nC @ 10V | ±20V | 5940pF @ 20V | - | 188W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | DDPAK/TO-263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 525V 6.2A TO220 |
7.326 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 525V | 6A (Tc) | 10V | 980mOhm @ 3.1A, 10V | 4.5V @ 50µA | 34nC @ 10V | ±30V | 737pF @ 100V | - | 90W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 950V 6A TO252 |
12.042 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 950V | 6A (Tc) | 10V | 1.2Ohm @ 2.7A, 10V | 3.5V @ 140µA | 15nC @ 10V | ±20V | 478pF @ 400V | - | 27W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 600V 5.5A TO-220 |
20.736 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 600V | 5.5A (Tc) | 10V | 2Ohm @ 2.75A, 10V | 4V @ 250µA | 20nC @ 10V | ±30V | 810pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 6A TO-220AB |
12.084 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 6A (Tc) | 10V | 1Ohm @ 3A, 10V | 5V @ 250µA | 18nC @ 10V | ±30V | 311pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |