Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 272/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 200V 95A TO263 |
21.504 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 95A (Tc) | 10V | 15.3mOhm @ 20A, 10V | 3.5V @ 250µA | 85nC @ 10V | ±20V | 4200pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 20A TO263 |
15.912 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 199mOhm @ 10A, 10V | 4.1V @ 250µA | 19.8nC @ 10V | ±30V | 1038pF @ 100V | - | 266W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO-220AB |
18.708 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4.2mOhm @ 75A, 10V | 4V @ 150µA | 120nC @ 10V | ±20V | 4520pF @ 50V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V 3A TO-220SIS |
18.096 |
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π-MOSIV | N-Channel | MOSFET (Metal Oxide) | 900V | 3A (Ta) | 10V | 4.3Ohm @ 1.5A, 10V | 4V @ 1mA | 17nC @ 10V | ±30V | 700pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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STMicroelectronics |
N-CHANNEL 900 V, 0.25 OHM TYP., |
9.624 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 900V | 4A (Tc) | 10V | 2.1Ohm @ 1A, 10V | 5V @ 100µA | 5.3nC @ 10V | ±30V | 173pF @ 100V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 202A TO-220AB |
19.044 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 202A (Tc) | 10V | 4mOhm @ 121A, 10V | 4V @ 250µA | 196nC @ 10V | ±20V | 5669pF @ 25V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 500V 11.5A TO-220F |
15.216 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 11.5A (Tc) | 10V | 650mOhm @ 6A, 10V | 5V @ 250µA | 30nC @ 10V | ±30V | 1315pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 55V 89A TO-220AB |
6.300 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 89A (Tc) | 4V, 10V | 10mOhm @ 46A, 10V | 2V @ 250µA | 98nC @ 5V | ±16V | 3600pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 80A TO220-3 |
6.732 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 6V, 10V | 7.2mOhm @ 80A, 10V | 3.5V @ 90µA | 68nC @ 10V | ±20V | 4910pF @ 50V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 650V 10A TO220 |
16.908 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 10A (Tc) | 10V | 430mOhm @ 5A, 10V | 4V @ 250µA | 17nC @ 10V | ±25V | 590pF @ 100V | - | 110W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 30V 80A TO-220 |
19.584 |
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STripFET™ V | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 5V, 10V | 5.4mOhm @ 40A, 10V | 2.5V @ 250µA | 14nC @ 5V | ±22V | 1850pF @ 25V | - | 70W (Tc) | 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 50A TO220-3 |
15.108 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 50A (Tc) | 4.5V, 10V | 15.7mOhm @ 50A, 10V | 2.4V @ 60µA | 64nC @ 10V | ±20V | 4180pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 150V 33A TO-3P |
15.588 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 33A (Tc) | 10V | 90mOhm @ 16.5A, 10V | 4V @ 250µA | 52nC @ 10V | ±25V | 1600pF @ 25V | - | 227W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 6.2A TO-220AB |
20.472 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 1300pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 150V 35A TO-220AB |
20.832 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 35A (Tc) | 10V | 39mOhm @ 21A, 10V | 5V @ 100µA | 40nC @ 10V | ±20V | 1750pF @ 50V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 7.7A TO220FP |
15.756 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 7.7A (Tc) | 10V | 300mOhm @ 4.6A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 860pF @ 25V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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STMicroelectronics |
N-CHANNEL 600 V, 0.310 OHM TYP., |
21.672 |
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MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 365mOhm @ 5.5A, 10V | 5V @ 250µA | 19nC @ 10V | ±25V | 730pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 60V 50A TO220FP |
16.428 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 18mOhm @ 27.5A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 1300pF @ 25V | - | 30W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 250V 33A TO-220 |
19.968 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 33A (Tc) | 10V | 94mOhm @ 16.5A, 10V | 5V @ 250µA | 48nC @ 10V | ±30V | 2135pF @ 25V | - | 235W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 100V 25A TO-220 |
8.892 |
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DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 100V | 25A (Tc) | 10V | 35mOhm @ 12.5A, 10V | 4.5V @ 250µA | 14nC @ 10V | ±20V | 920pF @ 50V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 200V 11A D2PAK |
15.276 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 1200pF @ 25V | - | 3W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 200V 15A TO-220FP |
8.304 |
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MESH OVERLAY™ | N-Channel | MOSFET (Metal Oxide) | 200V | 15A (Tc) | 10V | 160mOhm @ 7.5A, 10V | 4V @ 250µA | 24nC @ 10V | ±20V | 800pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET P-CH 100V 23A TO-247AC |
15.348 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 23A (Tc) | 10V | 117mOhm @ 13A, 10V | 4V @ 250µA | 97nC @ 10V | ±20V | 1300pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 1000V 3.1A TO-220AB |
16.032 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 3.1A (Tc) | 10V | 5Ohm @ 1.9A, 10V | 4V @ 250µA | 80nC @ 10V | ±20V | 980pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 60V 46A F7 TO220FP |
7.752 |
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STripFET™ F7 | N-Channel | MOSFET (Metal Oxide) | 60V | 46A (Tc) | 10V | 5.6mOhm @ 23A, 10V | 4V @ 250µA | 30nC @ 10V | ±20V | 1980pF @ 25V | - | 25W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 200V 5.2A D2PAK |
8.478 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 5.2A (Tc) | 10V | 800mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 3W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 500V 5A TO-220AB |
17.880 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 790mOhm @ 2.5A, 10V | 4V @ 250µA | 14nC @ 10V | ±25V | 364pF @ 50V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Microchip Technology |
MOSFET P-CH 60V 640MA TO92-3 |
18.012 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 640mA (Tj) | 5V, 10V | 900mOhm @ 3.5A, 10V | 3.5V @ 10mA | - | ±20V | 450pF @ 25V | - | 740mW (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Vishay Siliconix |
MOSFET N-CH 200V 9.8A TO220FP |
16.680 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 9.8A (Tc) | 10V | 180mOhm @ 5.9A, 10V | 4V @ 250µA | 70nC @ 10V | ±20V | 1300pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 100V 131A TO-220 |
17.028 |
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ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 131A (Tc) | 7.5V, 10V | 5.8mOhm @ 30A, 10V | 4V @ 250µA | 81nC @ 10V | ±20V | 3330pF @ 50V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |