Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 269/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STMicroelectronics |
MOSFET N-CH 200V 75A TO-247 |
11.976 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 75A (Tc) | 10V | 34mOhm @ 37A, 10V | 4V @ 250µA | 84nC @ 10V | ±20V | 3260pF @ 25V | - | 190W (Tc) | -50°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 100V 180A TO-263 |
6.144 |
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TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 6.4mOhm @ 25A, 10V | 4.5V @ 250µA | 151nC @ 10V | ±30V | 6900pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 600V 47A TO-3P |
6.102 |
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SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 70mOhm @ 23.5A, 10V | 5V @ 250µA | 270nC @ 10V | ±30V | 8000pF @ 25V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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STMicroelectronics |
MOSFET N-CH 600V 50A |
7.920 |
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Automotive, AEC-Q101, MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 50A (Tc) | 10V | 60mOhm @ 25A, 10V | 5V @ 250µA | 90nC @ 10V | ±25V | 4100pF @ 100V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 150V 180A TO-264 |
5.040 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 150V | 180A (Tc) | 10V | 10mOhm @ 90A, 10V | 5V @ 500µA | 240nC @ 10V | ±20V | 7000pF @ 25V | - | 800W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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Vishay Siliconix |
MOSFET N-CH 600V 70A TO-247AC |
46.434 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 70A (Tc) | 10V | 38mOhm @ 35A, 10V | 4V @ 250µA | 380nC @ 10V | ±30V | 7500pF @ 100V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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IXYS |
300V/150A ULTRA JUNCTION X3-CLAS |
4.428 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 150A (Tc) | 10V | 8.3mOhm @ 75A, 10V | 4.5V @ 4mA | 254nC @ 10V | ±20V | 13.1nF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 600V 64A PLUS247 |
7.146 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 600V | 64A (Tc) | 10V | 96mOhm @ 500mA, 10V | 5V @ 8mA | 200nC @ 10V | ±30V | 12000pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 72A SOT-227B |
6.336 |
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PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 600V | 72A (Tc) | 10V | 75mOhm @ 41A, 10V | 5V @ 8mA | 240nC @ 10V | ±30V | 23000pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 4500V 0.2A I4PAK |
6.678 |
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- | N-Channel | MOSFET (Metal Oxide) | 4500V | 200mA (Tc) | 10V | 750Ohm @ 10mA, 10V | 6.5V @ 250µA | 10.4nC @ 10V | ±20V | 256pF @ 25V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS i4-PAC™ | i4-Pac™-5 (3 Leads) |
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IXYS |
MOSFET N-CH 4500V 1A TO268 |
160 |
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- | N-Channel | MOSFET (Metal Oxide) | 4500V | 1A (Tc) | 10V | 85Ohm @ 50mA, 10V | 6.5V @ 250µA | 40nC @ 10V | ±20V | 1730pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 1000V 38A SOT-227B |
5.778 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 38A (Tc) | 10V | 210mOhm @ 19A, 10V | 6.5V @ 1mA | 350nC @ 10V | ±30V | 24000pF @ 25V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 600V 75A SOT-227B |
4.248 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 75A (Tc) | 10V | 36mOhm @ 50A, 10V | 3.9V @ 5mA | 500nC @ 10V | ±20V | - | Super Junction | 560W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 500V 58A SOT-227 |
8.460 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 500V | 58A (Tc) | 10V | 65mOhm @ 29A, 10V | 5V @ 2.5mA | 141nC @ 10V | ±30V | 7010pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 800V 50A SOT-227B |
14 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 800V | 50A (Tc) | 10V | 160mOhm @ 500mA, 10V | 5.5V @ 8mA | 260nC @ 10V | ±30V | 13500pF @ 25V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 900V 56A SOT-227B |
5.971 |
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Polar™ | N-Channel | MOSFET (Metal Oxide) | 900V | 56A (Tc) | 10V | 135mOhm @ 28A, 10V | 6.5V @ 3mA | 375nC @ 10V | ±30V | 23000pF @ 25V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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STMicroelectronics |
MOSFET N-CH 650V 143A ISOTOP |
6.552 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 143A (Tc) | 10V | 15mOhm @ 69A, 10V | 5V @ 250µA | 414nC @ 10V | ±25V | 18500pF @ 100V | - | 679W (Tc) | 150°C (TJ) | Chassis Mount | ISOTOP® | ISOTOP |
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IXYS |
MOSFET N-CH 2500V 5A TO264 |
5.364 |
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- | N-Channel | MOSFET (Metal Oxide) | 2500V | 5A (Tc) | 10V | 8.8Ohm @ 2.5A, 10V | 5V @ 1mA | 200nC @ 10V | ±30V | 8560pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 100V 1245A Y3-LI |
4.896 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 1220A (Tc) | 10V | 1.35mOhm @ 932A, 10V | 4V @ 64mA | 2520nC @ 10V | ±20V | - | - | - | -40°C ~ 150°C (TJ) | Chassis Mount | Y3-Li | Y3-Li |
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Microchip Technology |
MOSFET N-CH 500V 30MA TO92-3 |
21.192 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 30mA (Tj) | 0V | 1000Ohm @ 500µA, 0V | - | - | ±20V | 10pF @ 25V | Depletion Mode | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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ON Semiconductor |
MOSFET P-CH 60V 12A TP-FA |
15.072 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 12A (Ta) | 4V, 10V | 62mOhm @ 6A, 10V | - | 26nC @ 10V | ±20V | 1150pF @ 20V | - | 1W (Ta), 15W (Tc) | 150°C (TJ) | Surface Mount | TP-FA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Microchip Technology |
MOSFET N-CH 60V 300MA TO92-3 |
7.704 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 300mA (Tj) | 4.5V, 10V | 2.5Ohm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 50pF @ 25V | - | 740mW (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET P-CH 40V 0.175A TO92-3 |
15.024 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 175mA (Tj) | 4.5V, 10V | 6Ohm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 60pF @ 25V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 300V 0.175A TO92-3 |
21.096 |
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- | N-Channel | MOSFET (Metal Oxide) | 300V | 175mA (Tj) | 0V | 12Ohm @ 150mA, 0V | - | - | ±20V | 300pF @ 25V | Depletion Mode | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 (TO-226) | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 60V 350MA TO92-3 |
17.448 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 350mA (Tj) | 5V, 10V | 3Ohm @ 1A, 10V | 2.4V @ 1mA | - | ±20V | 65pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Infineon Technologies |
MOSFET N-CH 100V 9.7A D2PAK |
16.332 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 9.7A (Tc) | 10V | 200mOhm @ 5.7A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 330pF @ 25V | - | 3.8W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 9.3A D2PAK |
18.432 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 9.3A (Tc) | 10V | 300mOhm @ 5.4A, 10V | 4V @ 250µA | 35nC @ 10V | ±20V | 575pF @ 25V | - | 82W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Microchip Technology |
MOSFET P-CH 40V 0.25A TO92-3 |
9.456 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 250mA (Tj) | 5V, 10V | 8Ohm @ 500mA, 10V | 3.5V @ 1mA | - | ±20V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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ON Semiconductor |
MOSFET NCH 30V 6.9A IPAK TRIMMED |
20.844 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 6.9A (Ta), 35A (Tc) | 4.5V, 11.5V | 15mOhm @ 30A, 10V | 2.5V @ 250µA | 14.1nC @ 11.5V | ±20V | 770pF @ 12V | - | 1.26W (Ta), 32.6W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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Microchip Technology |
MOSFET N-CH 60V 500MA TO92-3 |
23.040 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 500mA (Tj) | 3V, 10V | 1.5Ohm @ 750mA, 10V | 2V @ 1mA | - | ±20V | 150pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |