Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 958/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE SCHOTTKY 180V 240A HALFPAK |
4.248 |
|
- | Schottky, Reverse Polarity | 180V | 240A | 860mV @ 240A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8mA @ 180V | 6000pF @ 5V, 1MHz | Chassis Mount | HALF-PAK | HALF-PAK | - |
|
|
|
Microsemi |
DIODE GEN PURP 600V 100A HALFPAK |
2.718 |
|
- | Standard, Reverse Polarity | 600V | 100A | 1.35V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 50µA @ 600V | 275pF @ 10V, 1Mhz | Chassis Mount | HALF-PAK | HALF-PAK | - |
|
|
|
Microsemi |
DIODE GEN PURP 600V 200A HALFPAK |
3.544 |
|
- | Standard, Reverse Polarity | 600V | 200A | 1.35V @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | 130ns | 50µA @ 600V | - | Chassis Mount | HALF-PAK | HALF-PAK | - |
|
|
|
Microsemi |
DIODE GEN PURP 400V 300A DIE |
8.478 |
|
- | Standard, Reverse Polarity | 400V | 300A | 1.1V @ 300A | Standard Recovery >500ns, > 200mA (Io) | - | 75µA @ 400V | - | Chassis Mount | Die | Die | - |
|
|
|
Microsemi |
DIODE SCHOTTKY 100V 240A HALFPAK |
3.024 |
|
- | Schottky, Reverse Polarity | 100V | 240A | 860mV @ 240A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8mA @ 100V | 6400pF @ 5V, 1MHz | Chassis Mount | HALF-PAK | HALF-PAK | - |
|
|
|
ON Semiconductor |
DIODE GEN PURP 100V 200MA SOT23 |
6.408 |
|
- | Standard | 100V | 200mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 150°C (Max) |
|
|
|
Microsemi |
DIODE GEN PURP 100V 12A DO203AA |
2.088 |
|
Military, MIL-PRF-19500/304 | Standard | 100V | 12A | 1.5V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 100V | 115pF @ 10V, 1MHz | Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 1A D5A |
5.310 |
|
Military, MIL-PRF-19500/429 | Standard | 600V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 600V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE GEN PURP 800V 1A D5A |
7.362 |
|
Military, MIL-PRF-19500/429 | Standard | 800V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 500nA @ 800V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 100V 2.5A D5A |
3.978 |
|
Military, MIL-PRF-19500/477 | Standard | 100V | 2.5A | 975mV @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 6A AXIAL |
2.100 |
|
Military, MIL-PRF-19500/477 | Standard | 50V | 6A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 60pF @ 10V, 1MHz | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 220V 2A AXIAL |
5.562 |
|
Military, MIL-PRF-19500/585 | Standard | 220V | 2A | 1.6V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 220V | 10pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 220V 2A D5A |
5.094 |
|
Military, MIL-PRF-19500/585 | Standard | 220V | 2A | 1.6V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 220V | 10pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 440V 2A AXIAL |
2.538 |
|
Military, MIL-PRF-19500/585 | Standard | 440V | 2A | 1.6V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 440V | 10pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 660V 2A AXIAL |
7.632 |
|
Military, MIL-PRF-19500/585 | Standard | 660V | 2A | 1.6V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 660V | 10pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 220V 1.75A AXIAL |
3.798 |
|
Military, MIL-PRF-19500/590 | Standard | 220V | 1.75A | 1.35V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 220V | 40pF @ 10V, 1MHz | Through Hole | E, Axial | - | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 220V 1.75A D5B |
3.888 |
|
Military, MIL-PRF-19500/590 | Standard | 220V | 1.75A | 1.35V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 220V | 40pF @ 10V, 1MHz | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 440V 1.75A AXIAL |
7.992 |
|
Military, MIL-PRF-19500/590 | Standard | 440V | 1.75A | 1.35V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 440V | 40pF @ 10V, 1MHz | Through Hole | E, Axial | - | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 440V 1.75A D5B |
8.658 |
|
Military, MIL-PRF-19500/590 | Standard | 440V | 1.75A | 1.35V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 440V | 40pF @ 10V, 1MHz | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 660V 1.75A AXIAL |
6.714 |
|
Military, MIL-PRF-19500/590 | Standard | 660V | 1.75A | 1.35V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 600V | - | Through Hole | E, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 880V 1.4A AXIAL |
8.766 |
|
Military, MIL-PRF-19500/590 | Standard | 880V | 1.4A | 1.4V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 2µA @ 800V | - | Through Hole | E, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 1.1KV 1.4A AXIAL |
4.482 |
|
Military, MIL-PRF-19500/590 | Standard | 1100V | 1.4A | 1.6V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 2µA @ 1000V | - | Through Hole | E, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 500V 3A D5B |
2.538 |
|
Military, MIL-PRF-19500/411 | Standard | 500V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 1µA @ 500V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 990V 1A D5A |
6.408 |
|
Military, MIL-PRF-19500/585 | Standard | 990V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500nA @ 990V | 10pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 800V 1A AXIAL |
2.322 |
|
Military, MIL-PRF-19500/286 | Standard | 800V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 800V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 3A D5B |
6.480 |
|
Military, MIL-PRF-19500/411 | Standard | 50V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 50V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 100V 3A AXIAL |
7.686 |
|
Military, MIL-PRF-19500/411 | Standard | 100V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 100V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 500V 3A AXIAL |
6.930 |
|
Military, MIL-PRF-19500/411 | Standard | 500V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 500V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A D5A |
5.994 |
|
Military, MIL-PRF-19500/429 | Standard | 400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 400V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE GEN PURP 800V 1A D5A |
4.788 |
|
Military, MIL-PRF-19500/429 | Standard | 800V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 500nA @ 800V | 20pF @ 12V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |