Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 959/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE GEN PURP 50V 1A AXIAL |
2.808 |
|
Military, MIL-PRF-19500/477 | Standard | 50V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 50V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
Microsemi |
DIODE GEN PURP 50V 1A D5A |
7.452 |
|
Military, MIL-PRF-19500/477 | Standard | 50V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 50V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
|
|
Microsemi |
DIODE GEN PURP 100V 1A D5A |
6.138 |
|
Military, MIL-PRF-19500/477 | Standard | 100V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
|
|
Microsemi |
DIODE GEN PURP 50V 3A D5B |
8.928 |
|
Military, MIL-PRF-19500/477 | Standard | 50V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
|
|
Microsemi |
DIODE GEN PURP 660V 1.2A D5A |
6.516 |
|
Military, MIL-PRF-19500/585 | Standard | 660V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 660V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
|
|
Microsemi |
DIODE GEN PURP 1.1KV 1A D5A |
8.424 |
|
Military, MIL-PRF-19500/585 | Standard | 1100V | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 1µA @ 1100V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 150°C |
|
|
Microsemi |
DIODE GEN PURP 220V 1.75A D5B |
3.726 |
|
Military, MIL-PRF-19500/590 | Standard | 220V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 220V | 40pF @ 10V, 1MHz | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
|
|
Microsemi |
DIODE GEN PURP 440V 1.75A AXIAL |
7.182 |
|
Military, MIL-PRF-19500/590 | Standard | 440V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 440V | 40pF @ 10V, 1MHz | Through Hole | E, Axial | - | -65°C ~ 150°C |
|
|
Microsemi |
DIODE GEN PURP 660V 1.75A D5B |
5.796 |
|
Military, MIL-PRF-19500/590 | Standard | 660V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 660V | 40pF @ 10V, 1MHz | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
|
|
Microsemi |
DIODE GEN PURP 880V 1.4A AXIAL |
4.050 |
|
Military, MIL-PRF-19500/590 | Standard | 880V | 1.4A | 1.4V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 2µA @ 880V | 40pF @ 10V, 1MHz | Through Hole | E, Axial | - | -65°C ~ 150°C |
|
|
Microsemi |
DIODE SCHOTTKY 40V 1A DO204AL |
5.166 |
|
- | Schottky | 40V | 1A | 690mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Microsemi |
DIODE SCHOTTKY 50V 1A DO204AL |
7.632 |
|
- | Schottky | 50V | 1A | 690mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Microsemi |
DIODE SCHOTTKY 60V 1A DO204AL |
7.218 |
|
- | Schottky | 60V | 1A | 690mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Microsemi |
DIODE SCHOTTKY 90V 1A DO204AL |
6.210 |
|
- | Schottky | 90V | 1A | 810mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Microsemi |
DIODE SCHOTTKY 100V 1A DO204AL |
7.974 |
|
- | Schottky | 100V | 1A | 830mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Microsemi |
DIODE SCHOTTKY 40V 1A DO204AL |
3.366 |
|
- | Schottky | 40V | 1A | 580mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
|
|
Microsemi |
DIODE SCHOTTKY 45V 1A DO204AL |
6.498 |
|
- | Schottky | 45V | 1A | 580mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
|
|
Microsemi |
DIODE SCHOTTKY 50V 1A DO204AL |
8.478 |
|
- | Schottky | 50V | 1A | 580mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
|
|
Panasonic Electronic Components |
DIODE SCHOTTKY 30V 200MA SOT23-3 |
8.820 |
|
- | Schottky | 30V | 200mA | 550mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | 1.5ns | 50µA @ 30V | 3.8pF @ 10V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 125°C (Max) |
|
|
Panasonic Electronic Components |
DIODE GEN PURP 80V 200MA SC59-3 |
6.894 |
|
- | Standard | 80V | 200mA (DC) | 1.25V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 3ns | 100nA @ 80V | 1.2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SC-59-3 | 150°C (Max) |
|
|
Panasonic Electronic Components |
DIODE SCHOTTKY 30V 100MA SOD923 |
8.712 |
|
- | Schottky | 30V | 100mA | 550mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 800ps | 15µA @ 30V | 2pF @ 10V, 1MHz | Surface Mount | SOD-923 | SOD-923 | 125°C (Max) |
|
|
Microsemi |
DIODE GEN PURP 50V 75MA DO35 |
8.136 |
|
- | Standard | 50V | 75mA | 1V @ 75mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Through Hole | DO-204AA, DO-7, Axial | DO-35 | -65°C ~ 125°C |
|
|
Microsemi |
DIODE GEN PURP 175V 100MA DO7 |
5.634 |
|
- | Standard | 175V | 100mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 175V | - | Through Hole | DO-204AA, DO-7, Axial | DO-7 | -65°C ~ 175°C |
|
|
Microsemi |
DIODE GEN PURP 75V 200MA DO35 |
6.822 |
|
- | Standard | 75V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 25nA @ 20V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 150°C |
|
|
Microsemi |
DIODE GEN PURP 70V 150MA DO35 |
6.210 |
|
- | Standard | 70V | 150mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 1µA @ 70V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 150°C |
|
|
Microsemi |
DIODE GEN PURP 200V 150MA DO35 |
5.292 |
|
- | Standard | 200V | 150mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 1µA @ 200V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 150°C |
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
6.030 |
|
- | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
Microsemi |
DIODE GEN PURP 800V 1A AXIAL |
6.552 |
|
- | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 800V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
Microsemi |
DIODE GEN PURP 1KV 1A AXIAL |
5.562 |
|
- | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 1000V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
Microsemi |
DIODE GEN PURP 800V 1A AXIAL |
5.850 |
|
- | Standard | 800V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 800V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |