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Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 959/1165
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
JANTXV1N5802
Microsemi
DIODE GEN PURP 50V 1A AXIAL
2.808
Military, MIL-PRF-19500/477
Standard
50V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 50V
25pF @ 10V, 1MHz
Through Hole
A, Axial
-
-65°C ~ 175°C
JANTXV1N5802US
Microsemi
DIODE GEN PURP 50V 1A D5A
7.452
Military, MIL-PRF-19500/477
Standard
50V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 50V
25pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 175°C
JANTXV1N5804US
Microsemi
DIODE GEN PURP 100V 1A D5A
6.138
Military, MIL-PRF-19500/477
Standard
100V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 100V
25pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 175°C
JANTXV1N5807US
Microsemi
DIODE GEN PURP 50V 3A D5B
8.928
Military, MIL-PRF-19500/477
Standard
50V
3A
875mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
5µA @ 50V
60pF @ 10V, 1MHz
Surface Mount
SQ-MELF, B
D-5B
-65°C ~ 175°C
JANTXV1N6622US
Microsemi
DIODE GEN PURP 660V 1.2A D5A
6.516
Military, MIL-PRF-19500/585
Standard
660V
1.2A
1.4V @ 1.2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
500nA @ 660V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 150°C
JANTXV1N6625
Microsemi
DIODE GEN PURP 1.1KV 1A D5A
8.424
Military, MIL-PRF-19500/585
Standard
1100V
1A
1.75V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
1µA @ 1100V
-
Through Hole
A, Axial
A-PAK
-65°C ~ 150°C
JANTXV1N6626US
Microsemi
DIODE GEN PURP 220V 1.75A D5B
3.726
Military, MIL-PRF-19500/590
Standard
220V
1.75A
1.35V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 220V
40pF @ 10V, 1MHz
Surface Mount
SQ-MELF, E
D-5B
-65°C ~ 150°C
JANTXV1N6627
Microsemi
DIODE GEN PURP 440V 1.75A AXIAL
7.182
Military, MIL-PRF-19500/590
Standard
440V
1.75A
1.35V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 440V
40pF @ 10V, 1MHz
Through Hole
E, Axial
-
-65°C ~ 150°C
JANTXV1N6628US
Microsemi
DIODE GEN PURP 660V 1.75A D5B
5.796
Military, MIL-PRF-19500/590
Standard
660V
1.75A
1.35V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 660V
40pF @ 10V, 1MHz
Surface Mount
SQ-MELF, E
D-5B
-65°C ~ 150°C
JANTXV1N6629
Microsemi
DIODE GEN PURP 880V 1.4A AXIAL
4.050
Military, MIL-PRF-19500/590
Standard
880V
1.4A
1.4V @ 1.4A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
2µA @ 880V
40pF @ 10V, 1MHz
Through Hole
E, Axial
-
-65°C ~ 150°C
MSG104
Microsemi
DIODE SCHOTTKY 40V 1A DO204AL
5.166
-
Schottky
40V
1A
690mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 40V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
MSG105
Microsemi
DIODE SCHOTTKY 50V 1A DO204AL
7.632
-
Schottky
50V
1A
690mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 50V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
MSG106
Microsemi
DIODE SCHOTTKY 60V 1A DO204AL
7.218
-
Schottky
60V
1A
690mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 60V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
MSG109
Microsemi
DIODE SCHOTTKY 90V 1A DO204AL
6.210
-
Schottky
90V
1A
810mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
MSG110
Microsemi
DIODE SCHOTTKY 100V 1A DO204AL
7.974
-
Schottky
100V
1A
830mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
MSG140
Microsemi
DIODE SCHOTTKY 40V 1A DO204AL
3.366
-
Schottky
40V
1A
580mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 40V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 150°C
MSG145
Microsemi
DIODE SCHOTTKY 45V 1A DO204AL
6.498
-
Schottky
45V
1A
580mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 45V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 150°C
MSG150
Microsemi
DIODE SCHOTTKY 50V 1A DO204AL
8.478
-
Schottky
50V
1A
580mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 50V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 150°C
DB3Y313KEL
Panasonic Electronic Components
DIODE SCHOTTKY 30V 200MA SOT23-3
8.820
-
Schottky
30V
200mA
550mV @ 200mA
Small Signal =< 200mA (Io), Any Speed
1.5ns
50µA @ 30V
3.8pF @ 10V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
125°C (Max)
BAS16
Panasonic Electronic Components
DIODE GEN PURP 80V 200MA SC59-3
6.894
-
Standard
80V
200mA (DC)
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
3ns
100nA @ 80V
1.2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59-3
150°C (Max)
DB2U31600L
Panasonic Electronic Components
DIODE SCHOTTKY 30V 100MA SOD923
8.712
-
Schottky
30V
100mA
550mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
800ps
15µA @ 30V
2pF @ 10V, 1MHz
Surface Mount
SOD-923
SOD-923
125°C (Max)
1N3064
Microsemi
DIODE GEN PURP 50V 75MA DO35
8.136
-
Standard
50V
75mA
1V @ 75mA
Small Signal =< 200mA (Io), Any Speed
4ns
100nA @ 50V
-
Through Hole
DO-204AA, DO-7, Axial
DO-35
-65°C ~ 125°C
1N3070
Microsemi
DIODE GEN PURP 175V 100MA DO7
5.634
-
Standard
175V
100mA
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
50ns
100nA @ 175V
-
Through Hole
DO-204AA, DO-7, Axial
DO-7
-65°C ~ 175°C
1N4448
Microsemi
DIODE GEN PURP 75V 200MA DO35
6.822
-
Standard
75V
200mA
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
4ns
25nA @ 20V
-
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 150°C
1N457A
Microsemi
DIODE GEN PURP 70V 150MA DO35
6.210
-
Standard
70V
150mA
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
1µA @ 70V
-
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 150°C
1N459A
Microsemi
DIODE GEN PURP 200V 150MA DO35
5.292
-
Standard
200V
150mA
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
1µA @ 200V
-
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 150°C
1N3612
Microsemi
DIODE GEN PURP 400V 1A AXIAL
6.030
-
Standard
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
1µA @ 400V
-
Through Hole
A, Axial
-
-65°C ~ 175°C
1N3614
Microsemi
DIODE GEN PURP 800V 1A AXIAL
6.552
-
Standard
800V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
1µA @ 800V
-
Through Hole
A, Axial
-
-65°C ~ 175°C
1N3957
Microsemi
DIODE GEN PURP 1KV 1A AXIAL
5.562
-
Standard
1000V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
1µA @ 1000V
-
Through Hole
A, Axial
-
-65°C ~ 175°C
1N4248
Microsemi
DIODE GEN PURP 800V 1A AXIAL
5.850
-
Standard
800V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
5µs
1µA @ 800V
-
Through Hole
A, Axial
-
-65°C ~ 175°C