Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 931/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.8A TO277A |
3.618 |
|
eSMP® | Avalanche | 200V | 1.8A (DC) | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 200V | 44pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.8A TO277A |
3.240 |
|
eSMP® | Avalanche | 400V | 1.8A (DC) | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 400V | 44pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.8A TO277A |
4.842 |
|
eSMP® | Avalanche | 400V | 1.8A (DC) | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 400V | 44pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.8A TO277A |
7.920 |
|
eSMP® | Avalanche | 600V | 1.8A (DC) | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 600V | 44pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.8A TO277A |
2.304 |
|
eSMP® | Avalanche | 600V | 1.8A (DC) | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 600V | 44pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.6A TO277A |
5.994 |
|
eSMP® | Avalanche | 800V | 1.6A (DC) | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 800V | 34pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.6A TO277A |
5.256 |
|
eSMP® | Avalanche | 800V | 1.6A (DC) | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 800V | 34pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 1.6A TO277 |
4.248 |
|
eSMP® | Avalanche | 1000V | 1.6A (DC) | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 1000V | 34pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 1.6A TO277 |
8.784 |
|
eSMP® | Avalanche | 1000V | 1.6A (DC) | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 1000V | 34pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 2A TO277A |
3.942 |
|
eSMP® | Avalanche | 200V | 2A (DC) | 1.6V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 200V | 77pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 2A TO277A |
5.436 |
|
eSMP® | Avalanche | 200V | 2A (DC) | 1.6V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 200V | 77pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 2A TO277A |
2.538 |
|
eSMP® | Avalanche | 400V | 2A (DC) | 1.6V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 400V | 77pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 2A TO277A |
3.906 |
|
eSMP® | Avalanche | 400V | 2A (DC) | 1.6V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 400V | 77pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 2A TO277A |
7.650 |
|
eSMP® | Avalanche | 600V | 2A (DC) | 1.6V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 600V | 77pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 2A TO277A |
7.182 |
|
eSMP® | Avalanche | 600V | 2A (DC) | 1.6V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 600V | 77pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.8A TO277A |
2.100 |
|
eSMP® | Avalanche | 800V | 1.8A (DC) | 1.9V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 800V | 55pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.8A TO277A |
8.262 |
|
eSMP® | Avalanche | 800V | 1.8A (DC) | 1.9V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 800V | 55pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 1.8A TO277 |
8.586 |
|
eSMP® | Avalanche | 1000V | 1.8A (DC) | 1.9V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 1000V | 55pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 1.8A TO277 |
2.286 |
|
eSMP® | Avalanche | 1000V | 1.8A (DC) | 1.9V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 1000V | 55pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 2.1A TO277A |
2.988 |
|
eSMP® | Avalanche | 200V | 2.1A (DC) | 920mV @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.2µs | 10µA @ 200V | 37pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 2.1A TO277A |
2.412 |
|
eSMP® | Avalanche | 200V | 2.1A (DC) | 920mV @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.2µs | 10µA @ 200V | 37pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 2.1A TO277A |
6.750 |
|
eSMP® | Avalanche | 400V | 2.1A (DC) | 920mV @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.2µs | 10µA @ 400V | 37pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 2.1A TO277A |
8.568 |
|
eSMP® | Avalanche | 400V | 2.1A (DC) | 920mV @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.2µs | 10µA @ 400V | 37pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 2.1A TO277A |
2.880 |
|
eSMP® | Avalanche | 600V | 2.1A (DC) | 920mV @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.2µs | 10µA @ 600V | 37pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 2.1A TO277A |
8.388 |
|
eSMP® | Avalanche | 600V | 2.1A (DC) | 920mV @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.2µs | 10µA @ 600V | 37pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 2.1A TO277A |
2.394 |
|
eSMP® | Avalanche | 800V | 2.1A (DC) | 920mV @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.2µs | 10µA @ 800V | 37pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 2.1A TO277A |
3.870 |
|
eSMP® | Avalanche | 800V | 2.1A (DC) | 920mV @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.2µs | 10µA @ 800V | 37pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 2.1A TO277 |
5.796 |
|
eSMP® | Avalanche | 1000V | 2.1A (DC) | 920mV @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.2µs | 10µA @ 1000V | 37pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 2.1A TO277 |
3.474 |
|
eSMP® | Avalanche | 1000V | 2.1A (DC) | 920mV @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.2µs | 10µA @ 1000V | 37pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 2.4A TO277A |
3.384 |
|
eSMP® | Avalanche | 200V | 2.4A (DC) | 962mV @ 2A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 10µA @ 200V | 60pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |