Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 928/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 6A TO220-2FP |
3.436 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 3A TO252-3 |
4.536 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 3A (DC) | 2.3V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 15µA @ 600V | 60pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 4A DO15 |
2.484 |
|
- | Standard | 600V | 4A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 3µA @ 600V | - | Through Hole | DO-204AC, DO-15, Axial | DO-15 | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 4A DO15 |
2.088 |
|
- | Standard | 600V | 4A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 3µA @ 600V | - | Through Hole | DO-204AC, DO-15, Axial | DO-15 | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 4A DO201AD |
6.750 |
|
- | Standard | 600V | 4A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 3µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | 175°C (Max) |
|
|
|
Microsemi |
DIODE SCHOTTKY 45V 120A HALFPAK |
6.642 |
|
- | Schottky | 45V | 120A | 550mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 45V | 5500pF @ 5V, 1MHz | Chassis Mount | HALF-PAK | HALF-PAK | - |
|
|
|
Microsemi |
DIODE SCHOTTKY 40V 240A HALFPAK |
3.348 |
|
- | Schottky | 40V | 240A | 550mV @ 240A | Fast Recovery =< 500ns, > 200mA (Io) | - | 12mA @ 40V | 10500pF @ 5V, 1MHz | Chassis Mount | HALF-PAK | HALF-PAK | - |
|
|
|
Microsemi |
DIODE SCHOTTKY 45V 240A HALFPAK |
3.888 |
|
- | Schottky | 45V | 240A | 550mV @ 240A | Fast Recovery =< 500ns, > 200mA (Io) | - | 12mA @ 45V | 10500pF @ 5V, 1MHz | Chassis Mount | HALF-PAK | HALF-PAK | - |
|
|
|
Microsemi |
DIODE SCHOTTKY 100V 240A HALFPAK |
5.382 |
|
- | Schottky | 100V | 240A | 860mV @ 240A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8mA @ 100V | 6400pF @ 5V, 1MHz | Chassis Mount | HALF-PAK | HALF-PAK | - |
|
|
|
Diodes Incorporated |
DIODE GEN PURP 600V 15A TO220AC |
5.076 |
|
DIODESTAR™ | Standard | 600V | 15A | 2.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 50µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
|
|
|
Diodes Incorporated |
DIODE GEN PURP 600V 15A TO220AC |
2.592 |
|
DIODESTAR™ | Standard | 600V | 15A | 3.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 50µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
|
|
|
Diodes Incorporated |
DIODE GEN PURP 600V 6A TO252-3 |
3.834 |
|
DIODESTAR™ | Standard | 600V | 6A | 2.6V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 50µA @ 600V | 30pF @ 4V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 80A TO247AC |
5.526 |
|
- | Standard | 1200V | 80A | 1.17V @ 80A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 40V 16A TO220AB |
7.362 |
|
- | Standard | 40V | 16A (DC) | 920mV @ 8A | - | - | 1µA @ 40V | - | Through Hole | TO-220-3 | TO-220AB | -45°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 100V 120A HALFPAK |
4.104 |
|
- | Schottky | 100V | 120A | 910mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 100V | 3000pF @ 5V, 1MHz | Chassis Mount | HALF-PAK | HALF-PAK | - |
|
|
|
Microsemi |
DIODE SCHOTTKY 30V 180A HALFPAK |
6.876 |
|
- | Schottky | 30V | 180A | 550mV @ 180A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 30V | 7000pF @ 5V, 1MHz | Chassis Mount | HALF-PAK | HALF-PAK | - |
|
|
|
Microsemi |
DIODE GEN PURP 600V 100A HALFPAK |
5.346 |
|
- | Standard | 600V | 100A | 1.35V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 50µA @ 600V | 275pF @ 10V, 1Mhz | Chassis Mount | HALF-PAK | HALF-PAK | - |
|
|
|
Microsemi |
DIODE GEN PURP 400V 300A MODULE |
2.034 |
|
- | Standard | 400V | 300A | 1.1V @ 300A | Standard Recovery >500ns, > 200mA (Io) | - | 75µA @ 400V | - | Chassis Mount | Module | Module | - |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 1KV 8A TO220AC |
3.222 |
|
- | Standard | 1000V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 800V 1A DO214AA |
7.308 |
|
- | Standard | 800V | 1A | 1.35V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 800V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA, HSMB | -50°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 600V 1A DO41 |
5.670 |
|
- | Standard | 600V | 1A | 1.35V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 5µA @ 600V | 20pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 100V 4A DO201AD |
8.172 |
|
- | Standard | 100V | 4A | 1V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 10µA @ 100V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 1KV 4A DO201AD |
4.248 |
|
- | Standard | 1000V | 4A | 1.85V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 600V 4A DO201AD |
2.178 |
|
- | Standard | 600V | 4A | 1.35V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 800V 4A DO201AD |
6.480 |
|
- | Standard | 800V | 4A | 1.85V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 400V 3A DO201AD |
6.336 |
|
- | Standard | 400V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 75pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 1KV 3A DO201AD |
4.230 |
|
- | Standard | 1000V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 50pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 50V 6A R6 |
7.506 |
|
- | Standard | 50V | 6A | 1.1V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 50V | - | Through Hole | R6, Axial | R-6 | -65°C ~ 150°C |
|
|
|
Power Integrations |
DIODE GEN PURP 600V 8A TO220FP |
7.326 |
|
Qspeed™ | Standard | 600V | 8A | 2.94V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 34ns | 250µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220 Full Pack | 150°C (Max) |
|
|
|
Power Integrations |
DIODE GEN PURP 600V 10A TO220FP |
3.276 |
|
Qspeed™ | Standard | 600V | 10A | 3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 23ns | 250µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220 Full Pack | 150°C (Max) |