Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 927/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 1A MFLAT |
41.662 |
|
- | Standard | 400V | 1A | 1.8V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
|
|
|
Rohm Semiconductor |
DIODE GEN PURP 200V 1A MSR |
2.100 |
|
- | Standard | 200V | 1A | 870mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 200V | - | Through Hole | DO-41 Mini, Axial | MSR | 150°C (Max) |
|
|
|
Rohm Semiconductor |
DIODE GEN PURP 600V 3A CPD |
4.248 |
|
- | Standard | 600V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | CPD | 150°C (Max) |
|
|
|
Comchip Technology |
DIODE GEN PURP 200V 1A SMA |
2.322 |
|
- | Standard | 200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | Surface Mount | SOD-123T | Mini SMA/SOD-123 | -55°C ~ 150°C |
|
|
|
Rohm Semiconductor |
DIODE GEN PURP 400V 1A DO41 |
3.150 |
|
- | Standard | 400V | 1A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 400V | - | Through Hole | DO-41 Mini, Axial | MSR | 150°C (Max) |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 30V 1A MSR |
2.772 |
|
- | Schottky | 30V | 1A | 480mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 30V | - | Through Hole | DO-41 Mini, Axial | MSR | 150°C (Max) |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 30V 200MA EMD2 |
2.034 |
|
- | Schottky | 30V | 200mA | 500mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 30µA @ 10V | - | Surface Mount | SC-79, SOD-523 | EMD2 | 125°C (Max) |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 30V 200MA EMD2 |
2.502 |
|
- | Schottky | 30V | 200mA | 600mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 1µA @ 10V | - | Surface Mount | SC-79, SOD-523 | EMD2 | 125°C (Max) |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 40V 1A MSR |
6.462 |
|
- | Schottky | 40V | 1A | 510mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30µA @ 40V | - | Through Hole | DO-41 Mini, Axial | MSR | 150°C (Max) |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 40V PMDS |
3.114 |
|
- | Schottky | 40V | - | - | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | Surface Mount | DO-214AC, SMA | PMDS | - |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 60V 1A MSR |
7.272 |
|
- | Schottky | 60V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 60V | - | Through Hole | DO-41 Mini, Axial | MSR | 150°C (Max) |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 60V 2A MSR |
7.992 |
|
- | Schottky | 60V | 2A | 580mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Through Hole | DO-41 Mini, Axial | MSR | 150°C (Max) |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 90V 1A MSR |
5.832 |
|
- | Schottky | 90V | 1A | 730mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Through Hole | DO-41 Mini, Axial | MSR | 150°C (Max) |
|
|
|
Rohm Semiconductor |
DIODE GEN PURP 400V 800MA LLDS |
6.300 |
|
- | Standard | 400V | 800mA | 1V @ 800mA | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | LLDS | 150°C (Max) |
|
|
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Rohm Semiconductor |
DIODE GEN PURP 400V 1A DO41 |
6.462 |
|
- | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | 175°C (Max) |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 30V 2A SOT363-6 |
7.200 |
|
- | Schottky | 30V | 2A (DC) | 600mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | 70pF @ 1V, 1MHz | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 | -55°C ~ 125°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 30V 200MA SOT323 |
5.022 |
|
- | Schottky | 30V | 200mA (DC) | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | Surface Mount | SC-70, SOT-323 | PG-SOT323-3 | 150°C (Max) |
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Infineon Technologies |
DIODE GEN PURP 600V 19.3A TO263 |
6.192 |
|
- | Standard | 600V | 19.3A (DC) | 2V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 50µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 29.2A TO263 |
4.140 |
|
- | Standard | 600V | 29.2A (DC) | 2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 87ns | 50µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 31A TO263-3 |
6.858 |
|
- | Standard | 1200V | 31A (DC) | 2.15V @ 18A | Fast Recovery =< 500ns, > 200mA (Io) | 195ns | 100µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 | -55°C ~ 150°C |
|
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|
Infineon Technologies |
DIODE GEN PURP 600V 71A TO263-3 |
5.292 |
|
- | Standard | 600V | 71A (DC) | 2V @ 45A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 50µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 7.3A TO252-3 |
4.536 |
|
- | Standard | 600V | 7.3A (DC) | 2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 62ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
|
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|
Infineon Technologies |
DIODE GEN PURP 600V 19.3A TO252 |
6.606 |
|
- | Standard | 600V | 19.3A (DC) | 2V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 29.2A TO252 |
5.004 |
|
- | Standard | 600V | 29.2A (DC) | 2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 87ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 11.2A TO220 |
7.704 |
|
- | Standard | 1200V | 11.2A (DC) | 2.15V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 115ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 150°C |
|
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|
Infineon Technologies |
DIODE GEN PURP 600V 14.7A TO220 |
4.500 |
|
- | Standard | 600V | 14.7A (DC) | 2V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 50µA @ 600V | - | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
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|
Infineon Technologies |
DIODE GEN PURP 1.2KV 23A TO220-2 |
8.856 |
|
- | Standard | 1200V | 23A (DC) | 2.15V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 150°C |
|
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|
Infineon Technologies |
DIODE GEN PURP 600V 41A TO220-2 |
7.668 |
|
- | Standard | 600V | 41A (DC) | 2V @ 23A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 50µA @ 600V | - | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 4A TO220-2FP |
6.750 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 4A (DC) | 1.9V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 130pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | -55°C ~ 175°C |
|
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Infineon Technologies |
DIODE SCHOTTKY 600V 5A TO220-2FP |
5.526 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 5A (DC) | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 600V | 240pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | -55°C ~ 175°C |