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Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 1111/1165
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
SF2L6G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 2A DO204AC
5.220
-
Standard
400V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
1µA @ 400V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
SF2L6GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 2A DO204AC
6.894
Automotive, AEC-Q101
Standard
400V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
1µA @ 400V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
SF2L8G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO204AC
2.556
-
Standard
600V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
1µA @ 600V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
SF2L8GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO204AC
6.192
Automotive, AEC-Q101
Standard
600V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
1µA @ 600V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
SF31G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO201AD
2.358
-
Standard
50V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF31GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO201AD
3.438
Automotive, AEC-Q101
Standard
50V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF32G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO201AD
8.928
-
Standard
100V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF32GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO201AD
7.452
Automotive, AEC-Q101
Standard
100V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF33G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 3A DO201AD
3.330
-
Standard
150V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF33GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 3A DO201AD
7.848
Automotive, AEC-Q101
Standard
150V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF34G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO201AD
3.672
-
Standard
200V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF34GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO201AD
5.760
Automotive, AEC-Q101
Standard
200V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF35G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 3A DO201AD
6.714
-
Standard
300V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF35GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 3A DO201AD
6.336
Automotive, AEC-Q101
Standard
300V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF36GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO201AD
2.880
Automotive, AEC-Q101
Standard
400V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF37G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 3A DO201AD
6.066
-
Standard
500V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF37GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 3A DO201AD
3.168
Automotive, AEC-Q101
Standard
500V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF38GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
7.542
Automotive, AEC-Q101
Standard
600V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF41G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 4A DO201AD
5.292
-
Standard
50V
4A
1V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF41GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 4A DO201AD
3.762
Automotive, AEC-Q101
Standard
50V
4A
1V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF42G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 4A DO201AD
4.770
-
Standard
100V
4A
1V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF42GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 4A DO201AD
8.730
Automotive, AEC-Q101
Standard
100V
4A
1V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF43G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 4A DO201AD
7.884
-
Standard
150V
4A
1V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF43GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 4A DO201AD
7.146
Automotive, AEC-Q101
Standard
150V
4A
1V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF44G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
7.632
-
Standard
200V
4A
1V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF44GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
7.452
Automotive, AEC-Q101
Standard
200V
4A
1V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF45G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 4A DO201AD
6.966
-
Standard
300V
4A
1.3V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF45GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 4A DO201AD
4.878
Automotive, AEC-Q101
Standard
300V
4A
1.3V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF46G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 4A DO201AD
3.508
-
Standard
400V
4A
1.3V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF46GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 4A DO201AD
7.092
Automotive, AEC-Q101
Standard
400V
4A
1.3V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C