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Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 1112/1165
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
SF47G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 4A DO201AD
3.400
-
Standard
500V
4A
1.7V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF47GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 4A DO201AD
6.624
Automotive, AEC-Q101
Standard
500V
4A
1.7V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF48G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
3.544
-
Standard
600V
4A
1.7V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF48GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
3.690
Automotive, AEC-Q101
Standard
600V
4A
1.7V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF61G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 6A DO201AD
7.812
-
Standard
50V
6A
975mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF61GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 6A DO201AD
4.626
Automotive, AEC-Q101
Standard
50V
6A
975mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF62G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 6A DO201AD
2.844
-
Standard
100V
6A
975mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF62GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 6A DO201AD
3.492
Automotive, AEC-Q101
Standard
100V
6A
975mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF63G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 6A DO201AD
6.336
-
Standard
150V
6A
975mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF63GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 6A DO201AD
8.874
Automotive, AEC-Q101
Standard
150V
6A
975mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF64G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 6A DO201AD
2.016
-
Standard
200V
6A
975mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF64GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 6A DO201AD
2.358
Automotive, AEC-Q101
Standard
200V
6A
975mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF65G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 6A DO201AD
3.798
-
Standard
300V
6A
1.3V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF65GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 6A DO201AD
5.526
Automotive, AEC-Q101
Standard
300V
6A
1.3V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF66G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 6A DO201AD
3.312
-
Standard
400V
6A
1.3V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF66GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 6A DO201AD
8.514
Automotive, AEC-Q101
Standard
400V
6A
1.3V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF67G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 6A DO201AD
4.176
-
Standard
500V
6A
1.7V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF67GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 6A DO201AD
3.598
Automotive, AEC-Q101
Standard
500V
6A
1.7V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF68G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 6A DO201AD
2.358
-
Standard
600V
6A
1.7V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF68GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 6A DO201AD
8.460
Automotive, AEC-Q101
Standard
600V
6A
1.7V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SK12H45 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 45V 12A DO201AD
5.166
-
Schottky
45V
12A
550mV @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
120µA @ 45V
-
Through Hole
DO-201AD, Axial
DO-201AD
200°C (Max)
SK12H60 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 12A DO201AD
6.228
-
Schottky
60V
12A
700mV @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
120µA @ 60V
-
Through Hole
DO-201AD, Axial
DO-201AD
200°C (Max)
SK15H45 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 45V 15A R-6
2.016
-
Schottky
45V
15A
560mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 45V
-
Through Hole
R6, Axial
R-6
200°C (Max)
SK20H45 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 45V 20A R-6
7.938
-
Schottky
45V
20A
550mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 45V
-
Through Hole
R6, Axial
R-6
200°C (Max)
SR002 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 500MA DO204AL
8.802
-
Schottky
20V
500mA
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
SR002HB0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 500MA DO204AL
8.784
Automotive, AEC-Q101
Schottky
20V
500mA
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
SR003 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 500MA DO204AL
3.978
-
Schottky
30V
500mA
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
SR003HB0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 500MA DO204AL
5.850
Automotive, AEC-Q101
Schottky
30V
500mA
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
SR004 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 500MA DO204AL
8.118
-
Schottky
40V
500mA
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
SR004HB0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 500MA DO204AL
6.804
Automotive, AEC-Q101
Schottky
40V
500mA
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C