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Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 1094/1165
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
SF802G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 8A TO220AB
5.058
-
Standard
100V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
70pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF802GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 8A TO220AB
6.516
Automotive, AEC-Q101
Standard
100V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
70pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF803G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 8A TO220AB
5.598
-
Standard
150V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
70pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF803GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 8A TO220AB
8.514
Automotive, AEC-Q101
Standard
150V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
70pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF804G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 8A TO220AB
4.554
-
Standard
200V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
70pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF804GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 8A TO220AB
7.182
Automotive, AEC-Q101
Standard
200V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
70pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF805G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 8A TO220AB
2.142
-
Standard
300V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
50pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF805GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 8A TO220AB
8.964
Automotive, AEC-Q101
Standard
300V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
50pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF806G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 8A TO220AB
6.516
-
Standard
400V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
50pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF806GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 8A TO220AB
6.030
Automotive, AEC-Q101
Standard
400V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
50pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF807G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 8A TO220AB
5.184
-
Standard
500V
8A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
50pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF807GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 8A TO220AB
8.316
Automotive, AEC-Q101
Standard
500V
8A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
50pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF808GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 8A TO220AB
5.454
Automotive, AEC-Q101
Standard
600V
8A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
50pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SFA1001G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 10A TO220AC
2.070
-
Standard
50V
10A
975mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
70pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA1001GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 10A TO220AC
3.888
Automotive, AEC-Q101
Standard
50V
10A
975mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
70pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA1002G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 10A TO220AC
3.348
-
Standard
100V
10A
975mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
70pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA1002GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 10A TO220AC
7.236
Automotive, AEC-Q101
Standard
100V
10A
975mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
70pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA1003G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 10A TO220AC
7.560
-
Standard
150V
10A
975mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
70pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA1003GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 10A TO220AC
2.016
Automotive, AEC-Q101
Standard
150V
10A
975mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
70pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA1004GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 10A TO220AC
4.284
Automotive, AEC-Q101
Standard
200V
10A
975mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
70pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA1005GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 10A TO220AC
2.556
Automotive, AEC-Q101
Standard
300V
10A
1.3V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA1006G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 10A TO220AC
7.290
-
Standard
400V
10A
1.3V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA1006GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 10A TO220AC
6.894
Automotive, AEC-Q101
Standard
400V
10A
1.3V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA1007G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 10A TO220AC
3.438
-
Standard
500V
10A
1.7V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA1007GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 10A TO220AC
3.600
Automotive, AEC-Q101
Standard
500V
10A
1.7V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA1008G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 10A TO220AC
5.148
-
Standard
600V
10A
1.7V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA1008GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 10A TO220AC
7.146
Automotive, AEC-Q101
Standard
600V
10A
1.7V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA801G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 8A TO220AC
8.172
-
Standard
50V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
100pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA801GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 8A TO220AC
2.484
Automotive, AEC-Q101
Standard
50V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
100pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFA802G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 8A TO220AC
2.358
-
Standard
100V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
100pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C