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Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 1092/1165
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
SF1007G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 10A TO220AB
3.978
-
Standard
500V
10A
1.7V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
50pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1007GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 10A TO220AB
8.604
Automotive, AEC-Q101
Standard
500V
10A
1.7V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
50pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1008GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 10A TO220AB
4.680
Automotive, AEC-Q101
Standard
600V
10A
1.7V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
50pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1601G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 16A TO220AB
6.876
-
Standard
50V
16A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1601GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 16A TO220AB
6.912
Automotive, AEC-Q101
Standard
50V
16A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1601PT C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 16A TO247AD
4.986
-
Standard
50V
16A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
85pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF1601PTHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 16A TO247AD
2.772
Automotive, AEC-Q101
Standard
50V
16A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
85pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF1602G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 16A TO220AB
5.832
-
Standard
100V
16A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1602GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 16A TO220AB
4.014
Automotive, AEC-Q101
Standard
100V
16A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1602PT C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 16A TO247AD
8.478
-
Standard
100V
16A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
85pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF1602PTHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 16A TO247AD
8.046
Automotive, AEC-Q101
Standard
100V
16A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
85pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF1603G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 16A TO220AB
3.420
-
Standard
150V
16A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1603GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 16A TO220AB
3.438
Automotive, AEC-Q101
Standard
150V
16A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1603PT C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 16A TO247AD
3.942
-
Standard
150V
16A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
85pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF1603PTHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 16A TO247AD
3.816
Automotive, AEC-Q101
Standard
150V
16A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
85pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF1604GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 16A TO220AB
3.490
Automotive, AEC-Q101
Standard
200V
16A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1604PT C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 16A TO247AD
4.680
-
Standard
200V
16A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
85pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF1604PTHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 16A TO247AD
6.588
Automotive, AEC-Q101
Standard
200V
16A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
85pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF1605G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 16A TO220AB
7.398
-
Standard
300V
16A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
60pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1605GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 16A TO220AB
3.564
Automotive, AEC-Q101
Standard
300V
16A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
60pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1605PT C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 16A TO247AD
7.596
-
Standard
300V
16A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
85pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF1605PTHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 16A TO247AD
6.984
Automotive, AEC-Q101
Standard
300V
16A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
85pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF1606GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 16A TO220AB
2.268
Automotive, AEC-Q101
Standard
400V
16A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
60pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1606PTHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 16A TO247AD
2.088
Automotive, AEC-Q101
Standard
400V
16A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
85pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF1607G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 16A TO220AB
2.592
-
Standard
500V
16A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
60pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1607GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 16A TO220AB
3.204
Automotive, AEC-Q101
Standard
500V
16A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
60pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1607PT C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 16A TO247AD
7.974
-
Standard
500V
16A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
85pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF1607PTHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 16A TO247AD
4.734
Automotive, AEC-Q101
Standard
500V
16A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
85pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
SF1608GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 16A TO220AB
7.362
Automotive, AEC-Q101
Standard
600V
16A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
60pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1608PT C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 16A TO247AD
2.682
-
Standard
600V
16A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
85pF @ 4V, 1MHz
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C