Raddrizzatori - Singoli

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Tipo di diodo

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Tensione - Inversione CC (Vr) (Max)

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Corrente - Media Rettificata (Io)

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Tensione - Avanti (Vf) (Max) @ If

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Velocità

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Tempo di recupero inverso (trr)

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Corrente - Perdita inversa @ Vr

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Capacità @ Vr, F

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Tipo di montaggio

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Pacchetto / Custodia

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Pacchetto dispositivo fornitore

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli

Record 34.936

Pagina 1093/1165

Numero parte	Produttore	Descrizione	Disponibile	Serie	Tipo di diodo	Tensione - Inversione CC (Vr) (Max)	Corrente - Media Rettificata (Io)	Tensione - Avanti (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / Custodia	Pacchetto dispositivo fornitore	Temperatura di esercizio - Giunzione
SF1608PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 16A TO247AD	6.048	Automotive, AEC-Q101	Standard	600V	16A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	85pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2001G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 20A TO220AB	4.644	-	Standard	50V	20A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	80pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF2001GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 20A TO220AB	5.400	Automotive, AEC-Q101	Standard	50V	20A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	80pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF2001PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 20A TO247AD	5.202	-	Standard	50V	20A	1.1V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2002G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 20A TO220AB	3.222	-	Standard	100V	20A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	80pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF2002GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 20A TO220AB	6.228	Automotive, AEC-Q101	Standard	100V	20A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	80pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF2002PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 20A TO247AD	3.942	-	Standard	100V	20A	1.1V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2003G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 20A TO220AB	2.016	-	Standard	150V	20A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	80pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF2003GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 20A TO220AB	2.466	Automotive, AEC-Q101	Standard	150V	20A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	80pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF2003PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 20A TO247AD	6.552	-	Standard	150V	20A	1.1V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2004GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 20A TO220AB	3.150	Automotive, AEC-Q101	Standard	200V	20A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	80pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF2005GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 20A TO220AB	8.658	Automotive, AEC-Q101	Standard	300V	20A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	80pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF2006GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 20A TO220AB	8.622	Automotive, AEC-Q101	Standard	400V	20A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	80pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF2007G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 20A TO220AB	3.582	-	Standard	500V	20A	1.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	80pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF2007GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 20A TO220AB	4.842	Automotive, AEC-Q101	Standard	500V	20A	1.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	80pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF2007PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 20A TO247AD	7.776	-	Standard	500V	20A	1.9V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2008G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 20A TO220AB	3.942	-	Standard	600V	20A	1.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	80pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF2008GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 20A TO220AB	8.262	Automotive, AEC-Q101	Standard	600V	20A	1.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	80pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF3001PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 30A TO247AD	4.554	-	Standard	50V	30A	950mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF3001PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 30A TO247AD	8.910	Automotive, AEC-Q101	Standard	50V	30A	950mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF3002PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 30A TO247AD	6.786	-	Standard	100V	30A	950mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF3002PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 30A TO247AD	4.788	Automotive, AEC-Q101	Standard	100V	30A	950mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF3003PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 30A TO247AD	2.628	-	Standard	150V	30A	950mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF3003PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 30A TO247AD	2.178	Automotive, AEC-Q101	Standard	150V	30A	950mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF3004PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 30A TO247AD	7.920	Automotive, AEC-Q101	Standard	200V	30A	950mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF3005PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 30A TO247AD	7.056	-	Standard	300V	30A	1.3V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF3005PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 30A TO247AD	5.418	Automotive, AEC-Q101	Standard	300V	30A	1.3V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF3006PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 30A TO247AD	5.436	Automotive, AEC-Q101	Standard	400V	30A	1.3V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF801G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 8A TO220AB	4.824	-	Standard	50V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	70pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF801GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 8A TO220AB	6.858	Automotive, AEC-Q101	Standard	50V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	70pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C

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