Raddrizzatori - Singoli

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Tensione - Avanti (Vf) (Max) @ If

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Tempo di recupero inverso (trr)

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Corrente - Perdita inversa @ Vr

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Capacità @ Vr, F

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Tipo di montaggio

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli

Record 34.936

Pagina 1062/1165

Numero parte	Produttore	Descrizione	Disponibile	Serie	Tipo di diodo	Tensione - Inversione CC (Vr) (Max)	Corrente - Media Rettificata (Io)	Tensione - Avanti (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / Custodia	Pacchetto dispositivo fornitore	Temperatura di esercizio - Giunzione
SRAS820 MNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 8A TO263AB	5.886	-	Schottky	20V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 20V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 125°C
SRAS820HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 8A TO263AB	5.400	Automotive, AEC-Q101	Schottky	20V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 20V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 125°C
SRAS830 MNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 8A TO263AB	3.096	-	Schottky	30V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 30V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 125°C
SRAS830HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 8A TO263AB	8.658	Automotive, AEC-Q101	Schottky	30V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 30V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 125°C
SRAS840 MNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 8A TO263AB	6.786	-	Schottky	40V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 125°C
SRAS840HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 8A TO263AB	4.248	Automotive, AEC-Q101	Schottky	40V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 125°C
SRAS850 MNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 8A TO263AB	6.102	-	Schottky	50V	8A	700mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 50V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SRAS850HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 8A TO263AB	5.814	Automotive, AEC-Q101	Schottky	50V	8A	700mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 50V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SRAS860 MNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 8A TO263AB	3.472	-	Schottky	60V	8A	700mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SRAS860HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 8A TO263AB	7.614	Automotive, AEC-Q101	Schottky	60V	8A	700mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SRAS890 MNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 8A TO263AB	5.184	-	Schottky	90V	8A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SRAS890HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 8A TO263AB	2.196	Automotive, AEC-Q101	Schottky	90V	8A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
UGS5J MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A TO263AB	5.004	-	Standard	600V	5A	2V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	20µA @ 600V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
ES1AL MQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	6.570	-	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	10pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1AL MTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	6.192	-	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	10pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1AL RTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	3.330	-	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	10pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1ALHMQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	3.168	Automotive, AEC-Q101	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1ALHMTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	7.920	Automotive, AEC-Q101	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1ALHRTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	4.212	Automotive, AEC-Q101	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1BL MQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	8.208	-	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	10pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1BL MTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	4.716	-	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	10pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1BL RTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	8.082	-	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	10pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1BLHMQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	2.124	Automotive, AEC-Q101	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1BLHMTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	2.016	Automotive, AEC-Q101	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1BLHRTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	8.802	Automotive, AEC-Q101	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1CL MQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A SUB SMA	4.050	-	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	10pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1CL MTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A SUB SMA	2.772	-	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	10pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1CL RTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A SUB SMA	8.820	-	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	10pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1CLHMQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A SUB SMA	8.712	Automotive, AEC-Q101	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1CLHMTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A SUB SMA	4.374	Automotive, AEC-Q101	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C

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