Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli

Record 34.936

Pagina 1061/1165

Numero parte	Produttore	Descrizione	Disponibile	Serie	Tipo di diodo	Tensione - Inversione CC (Vr) (Max)	Corrente - Media Rettificata (Io)	Tensione - Avanti (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / Custodia	Pacchetto dispositivo fornitore	Temperatura di esercizio - Giunzione
SFAS805GHMNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 8A TO263AB	2.970	Automotive, AEC-Q101	Standard	300V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	60pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFAS806G MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 8A TO263AB	6.120	-	Standard	400V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	60pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFAS806GHMNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 8A TO263AB	3.942	Automotive, AEC-Q101	Standard	400V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	60pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFAS807G MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 8A TO263AB	3.582	-	Standard	500V	8A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	60pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFAS807GHMNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 8A TO263AB	7.560	Automotive, AEC-Q101	Standard	500V	8A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	60pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFAS808G MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A TO263AB	4.482	-	Standard	600V	8A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	60pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFAS808GHMNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A TO263AB	7.236	Automotive, AEC-Q101	Standard	600V	8A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	60pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1001G MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 10A TO263AB	8.676	-	Standard	50V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 50V	70pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1001GHMNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 10A TO263AB	3.096	Automotive, AEC-Q101	Standard	50V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 50V	70pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1002G MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 10A TO263AB	6.066	-	Standard	100V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 100V	70pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1002GHMNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 10A TO263AB	8.676	Automotive, AEC-Q101	Standard	100V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 100V	70pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1003G MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 10A TO263AB	7.830	-	Standard	150V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 150V	70pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1003GHMNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 10A TO263AB	7.650	Automotive, AEC-Q101	Standard	150V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 150V	70pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1004G MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 10A TO263AB	6.732	-	Standard	200V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 200V	70pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1004GHMNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 10A TO263AB	5.814	Automotive, AEC-Q101	Standard	200V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 200V	70pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1005G MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 10A TO263AB	6.462	-	Standard	300V	10A	1.3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 300V	50pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1005GHMNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 10A TO263AB	6.984	Automotive, AEC-Q101	Standard	300V	10A	1.3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 300V	50pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1006G MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 10A TO263AB	6.048	-	Standard	400V	10A	1.3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 400V	50pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1007G MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 10A TO263AB	7.470	-	Standard	500V	10A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 500V	50pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1007GHMNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 10A TO263AB	6.246	Automotive, AEC-Q101	Standard	500V	10A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 500V	50pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1008G MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 10A TO263AB	6.732	-	Standard	600V	10A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 600V	50pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1008GHMNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 10A TO263AB	2.466	Automotive, AEC-Q101	Standard	600V	10A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 600V	50pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SRAS2050 MNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 20A TO263AB	3.708	-	Schottky	50V	20A	700mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SRAS2050HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 20A TO263AB	3.402	Automotive, AEC-Q101	Schottky	50V	20A	700mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SRAS2060 MNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 20A TO263AB	7.164	-	Schottky	60V	20A	700mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SRAS2060HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 20A TO263AB	4.176	Automotive, AEC-Q101	Schottky	60V	20A	700mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SRAS2090 MNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 20A TO263AB	8.136	-	Schottky	90V	20A	920mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SRAS2090HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 20A TO263AB	8.892	Automotive, AEC-Q101	Schottky	90V	20A	920mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SRAS8150 MNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 8A TO263AB	4.770	-	Schottky	150V	8A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SRAS8150HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 8A TO263AB	5.112	Automotive, AEC-Q101	Schottky	150V	8A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C

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